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Original Paper
Intrinsic Defects and the D1 to D4 Optical Bands Detected in Plastically Deformed Si
Article first published online: 27 OCT 2000
DOI: 10.1002/1521-3951(200011)222:1<133::AID-PSSB133>3.0.CO;2-D
© 2000 WILEY-VCH Verlag Berlin GmbH, Fed. Rep. of Germany
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Additional Information
How to Cite
Jones, R., Coomer, B., Goss, J., Öberg, S. and Briddon, P. (2000), Intrinsic Defects and the D1 to D4 Optical Bands Detected in Plastically Deformed Si. physica status solidi (b), 222: 133–140. doi: 10.1002/1521-3951(200011)222:1<133::AID-PSSB133>3.0.CO;2-D
Publication History
- Issue published online: 27 OCT 2000
- Article first published online: 27 OCT 2000
- Manuscript Received: 3 APR 2000
- Abstract
- References
- Cited By
Abstract
The properties of multi-vacancy and multi-interstitial defects that possess luminescent bands around 1 eV are reviewed. Prominent among these are the hexavacancy and tri- and tetra-self-interstitial defects. It is suggested that the formation of these defects on dislocation cores could lead to the D1 to D4 photoluminescent bands linked to dislocations in Si and SiGe.