physica status solidi (b)

Cover image for physica status solidi (b)

November 2001

Volume 228, Issue 2

Pages 345–628

    1. Influence of Dopants on Defect Formation in GaN (pages 345–352)

      Z. Liliental-Weber, J. Jasinski, M. Benamara, I. Grzegory, S. Porowski, D.J.H. Lampert, C.J. Eiting and R.D. Dupuis

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<345::AID-PSSB345>3.0.CO;2-M

    2. Observation of Mg-Rich Precipitates in the p-Type Doping of GaN-Based Laser Diodes (pages 353–356)

      M. Hansen, L.F. Chen, J.S. Speck and S.P. DenBaars

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<353::AID-PSSB353>3.0.CO;2-Q

    3. Activation of p-Type GaN with Irradiation of the Second Harmonics of a Q-Switched Nd : YAG Laser (pages 357–360)

      Yung-Chen Cheng, Chi-Chih Liao, Shih-Wei Feng, Chih-Chung Yang, Yen-Sheng Lin, Kung-Jeng Ma and Jen-Inn Chyi

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<357::AID-PSSB357>3.0.CO;2-A

    4. Time- and Temperature-Resolved Photoluminescence of GaN:Mg Epitaxial Layers Grown by MOVPE (pages 361–364)

      A.L. Gurskii, I.P. Marko, E.V. Lutsenko, V.N. Pavlovskii, V.Z. Zubialevich, G.P. Yablonskii, B. Schineller, O. Schön and M. Heuken

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<361::AID-PSSB361>3.0.CO;2-U

    5. Spatial Fluctuations and Localisation Effects in Optical Characteristics of p-Doped GaN Films (pages 365–369)

      E.M. Goldys, M. Godlewski, E. Kaminska, A. Piotrowska and K.S.A. Butcher

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<365::AID-PSSB365>3.0.CO;2-E

    6. Characterization of Mg-Doped GaN Micro-Crystals Grown by Direct Reaction of Gallium and Ammonia (pages 371–373)

      S.H. Lee, K.S. Nahm, E.-K. Suh and M.H. Hong

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<371::AID-PSSB371>3.0.CO;2-Q

    7. Activation of Mg Acceptor in GaN : Mg with Pulsed KrF (248 nm) Excimer Laser Irradiation (pages 375–378)

      Dong-Joon Kim, Hyun-Min Kim, Myung-Geun Han, Yong-Tae Moon, Seonghoon Lee and Seong-Ju Park

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<375::AID-PSSB375>3.0.CO;2-A

    8. Analysis of Time-Resolved Donor–Acceptor-Pair Recombination in MBE and MOVPE Grown GaN : Mg (pages 379–383)

      S. Strauf, S.M. Ulrich, P. Michler, J. Gutowski, T. Böttcher, S. Figge, S. Einfeldt and D. Hommel

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<379::AID-PSSB379>3.0.CO;2-V

    9. Investigation of Defect Levels in Mg-Doped GaN Schottky Structures by Thermal Admittance Spectroscopy (pages 385–389)

      N.D. Nguyen, M. Germain, M. Schmeits, B. Schineller and M. Heuken

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<385::AID-PSSB385>3.0.CO;2-6

    10. Low-Temperature Activation of Mg-Doped GaN with Pd Thin Films (pages 391–393)

      I. Waki, H. Fujioka, M. Oshima, H. Miki and M. Okuyama

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<391::AID-PSSB391>3.0.CO;2-I

    11. Threading Dislocations and Optical Properties of GaN and GaInN (pages 395–402)

      T. Miyajima, T. Hino, S. Tomiya, K. Yanashima, H. Nakajima, Y. Nanishi, A. Satake, Y. Masumoto, K. Akimoto, T. Kobayashi and M. Ikeda

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<395::AID-PSSB395>3.0.CO;2-2

    12. Mosaicity of GaN Epitaxial Layers: Simulation and Experiment (pages 403–406)

      R. Chierchia, T. Böttcher, S. Figge, M. Diesselberg, H. Heinke and D. Hommel

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<403::AID-PSSB403>3.0.CO;2-5

    13. Correlation of Defects and Local Bandgap Variations in GaInN/GaN/AlGaN LEDs (pages 407–410)

      F. Hitzel, A. Hangleiter, S. Bader, H.-J. Lugauer and V. Härle

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<407::AID-PSSB407>3.0.CO;2-Q

    14. Energetic Calculation of Coincidence Grain Boundaries with a Modified Stillinger-Weber Potential (pages 411–414)

      J. Chen, G. Nouet and P. Ruterana

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<411::AID-PSSB411>3.0.CO;2-9

    15. Structure Characterization of (Al,Ga)N Epitaxial Layers by Means of X-Ray Diffractometry (pages 415–418)

      J. Kozłowski, R. Paszkiewicz and M. Tłaczała

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<415::AID-PSSB415>3.0.CO;2-U

    16. Optical Micro-Characterization of Complex GaN Structures (pages 419–424)

      J. Christen and T. Riemann

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<419::AID-PSSB419>3.0.CO;2-E

    17. Optical Properties of III-Nitride Ternary Compounds (pages 425–428)

      A. Baldanzi, E. Bellotti and M. Goano

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<425::AID-PSSB425>3.0.CO;2-Q

    18. Investigation of Refractive Index and Optical Propagation Loss in Gallium Nitride Based Waveguides (pages 429–432)

      E. Dogheche, P. Ruterana, G. Nouet, F. Omnes and P. Gibart

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<429::AID-PSSB429>3.0.CO;2-A

    19. Extremely Slow Relaxation Process of a Yellow-Luminescence-Related State in GaN Revealed by Two-Wavelength Excited Photoluminescence (pages 433–436)

      J.M. Zanardi Ocampo, N. Kamata, W. Okamoto, K. Yamada, K. Hoshino, T. Someya and Y. Arakawa

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<433::AID-PSSB433>3.0.CO;2-U

    20. Infrared Ellipsometry – a Novel Tool for Characterization of Group-III Nitride Heterostructures for Optoelectronic Device Applications (pages 437–440)

      M. Schubert, A. Kasic, S. Einfeldt, D. Hommel, U. Köhler, D.J. As, J. Off, B. Kuhn, F. Scholz and J.A. Woollam

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<437::AID-PSSB437>3.0.CO;2-E

    21. Electronic Defect States Observed by Cathodoluminescence Spectroscopy at GaN/Sapphire Interfaces (pages 441–444)

      X.L. Sun, S.H. Goss, L.J. Brillson, D.C. Look and R.J. Molnar

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<441::AID-PSSB441>3.0.CO;2-Y

    22. Scanning Tunneling Luminescence Studies of Nitride Semiconductor Thin Films under Ambient Conditions (pages 445–448)

      S.K. Manson-Smith, C. Trager-Cowan and K.P. O'Donnell

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<445::AID-PSSB445>3.0.CO;2-I

    23. Raman Scattering and Photoluminescence of Mg-Implanted GaN Films (pages 449–452)

      Lianshan Wang, Soo Jin Chua and Wenhong Sun

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<449::AID-PSSB449>3.0.CO;2-2

    24. Effects of Indium Segregation and Well-Width Fluctuations on Optical Properties of InGaN/GaN Quantum Wells (pages 453–456)

      A. Soltani Vala, M.J. Godfrey and P. Dawson

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<453::AID-PSSB453>3.0.CO;2-M

    25. First-Principles Calculations of Optical Properties of AlN, GaN, and InN Compounds under Hydrostatic Pressure (pages 457–460)

      B. Abbar, B. Bouhafs, H. Aourag, G. Nouet and P. Ruterana

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<457::AID-PSSB457>3.0.CO;2-6

    26. Near K-Edge Absorption Spectra of III–V Nitrides (pages 461–465)

      K. Fukui, R. Hirai, A. Yamamoto, H. Hirayama, Y. Aoyagi, S. Yamaguchi, H. Amano, I. Akasaki and S. Tanaka

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<461::AID-PSSB461>3.0.CO;2-Q

    27. Internal Structure of Free Excitons in GaN (pages 467–470)

      P.P. Paskov, T. Paskova, P.O. Holtz and B. Monemar

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<467::AID-PSSB467>3.0.CO;2-2

    28. Experimental and Theoretical Tools for the Study of Exciton Properties versus Disorder in Nitride-Based Quantum Structures (pages 471–474)

      B. Gil, M. Zamfirescu, P. Bigenwald, G. Malpuech and A. Kavokin

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<471::AID-PSSB471>3.0.CO;2-M

    29. Comparison of Exciton–Biexciton with Bound Exciton–Biexciton Dynamics in GaN: Quantum Beats and Temperature Dependence of the Acoustic-Phonon Interaction (pages 475–479)

      K. Kyhm, R.A. Taylor, J.F. Ryan, T. Aoki, M. Kuwata-Gonokami, B. Beaumont and P. Gibart

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<475::AID-PSSB475>3.0.CO;2-6

    30. Micro-Photoluminescence Spectroscopy of Exciton–Polaritons in GaN with the Wave Vector k Normal to the c-Axis (pages 481–484)

      T.V. Shubina, T. Paskova, A.A. Toropov, A.V. Lebedev, S.V. Ivanov and B. Monemar

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<481::AID-PSSB481>3.0.CO;2-I

    31. Radiative and Nonradiative Exciton Lifetimes in GaN Grown by Molecular Beam Epitaxy (pages 485–488)

      G. Pozina, J.P. Bergman, B. Monemar, B. Heying and J.S. Speck

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<485::AID-PSSB485>3.0.CO;2-2

    32. The 3.466 eV Bound Exciton in GaN (pages 489–492)

      B. Monemar, W.M. Chen, P.P. Paskov, T. Paskova, G. Pozina and J.P. Bergman

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<489::AID-PSSB489>3.0.CO;2-N

    33. Exciton Diffusion in GaN Epitaxial Layers (pages 493–496)

      Yu. Rakovich , J.F. Donegan, A. Gladyshchuk, G. Yablonskii, B. Schineller and M. Heuken

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<493::AID-PSSB493>3.0.CO;2-6

    34. Excitonic Transitions in Homoepitaxial GaN (pages 497–500)

      G. Martínez-Criado, C.R. Miskys, A. Cros, A. Cantarero, O. Ambacher and M. Stutzmann

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<497::AID-PSSB497>3.0.CO;2-R

    35. Donor and Donor Bound Exciton Spectroscopy in Wurtzite GaN Heterostructures (pages 501–504)

      M. Teisseire, G. Neu and C. Morhain

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<501::AID-PSSB501>3.0.CO;2-9

    36. Playing with Polarity (pages 505–512)

      M. Stutzmann, O. Ambacher, M. Eickhoff, U. Karrer, A. Lima Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P.J. Schuck and R.D. Grober

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<505::AID-PSSB505>3.0.CO;2-U

    37. Investigation of Defects and Polarity in GaN Using Hot Wet Etching, Atomic Force and Transmission Electron Microscopy and Convergent Beam Electron Diffraction (pages 513–517)

      P. Visconti, D. Huang, M.A. Reshchikov, F. Yun, T. King, A.A. Baski, R. Cingolani, C.W. Litton, J. Jasinski, Z. Liliental-Weber and H. Morkoç

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<513::AID-PSSB513>3.0.CO;2-Y

    38. Wetting Behaviour of GaN Surfaces with Ga- or N-Face Polarity (pages 519–522)

      M. Eickhoff, R. Neuberger, G. Steinhoff, O. Ambacher, G. Müller and M. Stutzmann

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<519::AID-PSSB519>3.0.CO;2-A

    39. Kinetic Process of Polarity Selection in GaN Growth by RF-MBE (pages 523–527)

      K. Xu, N. Yano, A.W. Jia, A. Yoshikawa and K. Takahashi

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<523::AID-PSSB523>3.0.CO;2-U

    40. V/III Ratio Dependence of Polarity of GaN Grown on GaAs (111)A-Ga and (111)B-As Surfaces by MOMBE (pages 529–532)

      O. Takahashi, T. Nakayama, R. Souda and F. Hasegawa

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<529::AID-PSSB529>3.0.CO;2-6

    41. Electron Backscattered Diffraction Patterns from Cooled Gallium Nitride Thin Films (pages 533–536)

      F. Sweeney, C. Trager-Cowan, J. Hastie, D.A. Cowan, K.P. O'donnell, D. Zubia, S.D. Hersee, C.T. Foxon, I. Harrison and S.V. Novikov

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<533::AID-PSSB533>3.0.CO;2-Q

    42. Influence of Polarity on Surface Reaction between GaN{0001} and Hydrogen (pages 537–541)

      M. Mayumi, F. Satoh, Y. Kumagai, K. Takemoto and A. Koukitu

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<537::AID-PSSB537>3.0.CO;2-A

    43. A Comparative Study of MBE-Grown GaN Films Having Predominantly Ga- or N-Polarity (pages 543–547)

      F. Yun, D. Huang, M.A. Reshchikov, T. King, A.A. Baski, C.W. Litton, J. Jasinski, Z. Liliental-Weber, P. Visconti and H. Morkoç

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<543::AID-PSSB543>3.0.CO;2-M

    44. Polarity Inversion by Supplying Group-III Source First in MOMBE of GaN/AlN or GaN on GaAs (111)B (As Surface) (pages 549–552)

      F. Hasegawa, O. Takahashi, T. Nakayama and R. Souda

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<549::AID-PSSB549>3.0.CO;2-Z

    45. Charge Screening of Polarization Fields in Nitride Nanostructures (pages 553–558)

      A. Di Carlo and A. Reale

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<553::AID-PSSB553>3.0.CO;2-I

    46. Polarization Effects and UV Emission in Highly Excited Quaternary AlInGaN Quantum Wells (pages 559–562)

      E. Kuokstis, Jianping Zhang, J.W. Yang, G. Simin, M. Asif Khan, R. Gaska and M. Shur

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<559::AID-PSSB559>3.0.CO;2-V

    47. Photoluminescence Study of Piezoelectric Polarization in Strained AlxGa1—xN/GaN Single Quantum Wells (pages 563–566)

      V. Kirilyuk, P.R. Hageman, P.C.M. Christianen, F.D. Tichelaar and P.K. Larsen

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<563::AID-PSSB563>3.0.CO;2-E

    48. GW Self-Energy Correction to the Band Mass of Nitride Semiconductors (pages 567–570)

      M. Oshikiri and F. Aryasetiawan

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<567::AID-PSSB567>3.0.CO;2-Z

    49. Group-III Nitrides Hot Electron Effects in Moderate Electric Fields (pages 571–574)

      E.A. Barry, K.W. Kim and V.A. Kochelap

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<571::AID-PSSB571>3.0.CO;2-I

    50. Temperature Dependent Transport Parameters in Short GaN Structures (pages 575–578)

      A.F.M. Anwar, Shangli Wu and R.T. Webster

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<575::AID-PSSB575>3.0.CO;2-2

    51. Simultaneous Impurity-Band and Interface Conduction in Depth-Profiled n-GaN Epilayers (pages 579–583)

      C. Mavroidis, J.J. Harris, K. Lee, I. Harrison, B.J. Ansell, Z. Bougrioua and I. Moerman

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<579::AID-PSSB579>3.0.CO;2-N

    52. Band Structure Effects on the Transient Electron Velocity Overshoot in GaN (pages 585–588)

      M. Wraback, H. Shen, E. Bellotti, J.C. Carrano, C.J. Collins, J.C. Campbell, R.D. Dupuis, M.J. Schurman and I.T. Ferguson

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<585::AID-PSSB585>3.0.CO;2-Z

    53. Photoconductivity in Porous GaN Layers (pages 589–592)

      M. Mynbaeva, N. Bazhenov, K. Mynbaev, V. Evstropov, S.E. Saddow, Y. Koshka and Y. Melnik

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<589::AID-PSSB589>3.0.CO;2-J

    54. High-Field Electron Transport in Nanoscale Group-III Nitride Devices (pages 593–597)

      S.M. Komirenko, K.W. Kim, V.A. Kochelap and M.A. Stroscio

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<593::AID-PSSB593>3.0.CO;2-2

    55. Electrical Characterization at Cubic AlN/GaN Heterointerface Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy (pages 599–602)

      T. Kitamura, Y. Ishida, X.Q. Shen, H. Nakanishi, S.F. Chichibu, M. Shimizu and H. Okumura

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<599::AID-PSSB599>3.0.CO;2-F

    56. Transport Properties of Two-Dimensional Electron Gases Induced by Spontaneous and Piezoelectric Polarisation in AlGaN/GaN Heterostructures (pages 603–606)

      A. Link, T. Graf, R. Dimitrov, O. Ambacher, M. Stutzmann, Y. Smorchkova, U. Mishra and J. Speck

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<603::AID-PSSB603>3.0.CO;2-Y

    57. Energy Relaxation by Warm Two-Dimensional Electrons in a GaN/AlGaN Heterostructure (pages 607–611)

      N.M. Stanton, A.J. Kent, S.A. Cavill, A.V. Akimov, K.J. Lee, J.J. Harris, T. Wang and S. Sakai

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<607::AID-PSSB607>3.0.CO;2-I

    58. 2DEG Characteristics of AlN/GaN Heterointerface on Sapphire Substrates Grown by Plasma-Assisted MBE (pages 613–616)

      K. Jeganathan, T. Ide, S.X.Q. Shen, M. Shimizu and H. Okumura

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<613::AID-PSSB613>3.0.CO;2-U

    59. Electron Transport in III–V Nitride Two-Dimensional Electron Gases (pages 617–619)

      D. Jena, I. Smorchkova, A.C. Gossard and U.K. Mishra

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<617::AID-PSSB617>3.0.CO;2-E

    60. Investigation for the Formation of Polarization-Induced Two-Dimensional Electron Gas in AlGaN/GaN Heterostructure Field Effect Transistors (pages 621–624)

      H.W. Jang, C.M. Jeon, K.H. Kim, J.K. Kim, S.-B. Bae, J.-H. Lee, J.W. Choi and J.-L. Lee

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<621::AID-PSSB621>3.0.CO;2-Y

    61. 2DEG Mobility in AlGaN–GaN Structures Grown by LP-MOVPE (pages 625–628)

      Z. Bougrioua, J.-L. Farvacque, I. Moerman and F. Carosella

      Article first published online: 13 NOV 2001 | DOI: 10.1002/1521-3951(200111)228:2<625::AID-PSSB625>3.0.CO;2-I

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