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Original Paper

Reflectance Measurements of Annealed Porous Silicon Implanted with Nitrogen by Plasma Immersion Ion Implantation

  1. A.F. Beloto1,
  2. M.D. Silva1,
  3. J.R. Senna1,
  4. C. Kuranaga1,
  5. N.F. Leite1,
  6. M. Ueda2

Article first published online: 14 JUN 2002

DOI: 10.1002/1521-3951(200207)232:1<111::AID-PSSB111>3.0.CO;2-L

Issue

physica status solidi (b)

physica status solidi (b)

Volume 232, Issue 1, pages 111–115, July 2002

Additional Information

How to Cite

Beloto, A.F., Silva, M.D., Senna, J.R., Kuranaga, C., Leite, N.F. and Ueda, M. (2002), Reflectance Measurements of Annealed Porous Silicon Implanted with Nitrogen by Plasma Immersion Ion Implantation. Phys. Status Solidi B, 232: 111–115. doi: 10.1002/1521-3951(200207)232:1<111::AID-PSSB111>3.0.CO;2-L

Author Information

  1. 1

    Laboratório Associado de Sensores e Materiais – LAS, Instituto Nacional de Pesquisas Espaciais – INPE, CP 515, 12201-970, S. J. Campos, SP, Brazil

  2. 2

    Laboratório Associado de Plasma – LAP, Instituto Nacional de Pesquisas Espaciais – INPE, CP 515, 12201-970, S. J. Campos, SP, Brazil

Publication History

  1. Issue published online: 14 JUN 2002
  2. Article first published online: 14 JUN 2002
  3. Manuscript Accepted: 15 MAR 2002
  4. Manuscript Received: 26 NOV 2001

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