physica status solidi (b)

Cover image for physica status solidi (b)

December 2002

Volume 234, Issue 3

Pages R7–R18, 711–979

    1. Optical Properties of the Nitrogen Acceptor in Epitaxial ZnO (pages R7–R9)

      A. Zeuner, H. Alves, D.M. Hofmann, B.K. Meyer, A. Hoffmann, U. Haboeck, M. Strassburg and M. Dworzak

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<R7::AID-PSSB99997>3.0.CO;2-D

    2. Interfacial Elasticity Corrections to Size-Dependent Strain-State of Embedded Quantum Dots (pages R10–R12)

      P. Sharma and S. Ganti

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<R10::AID-PSSB999910>3.0.CO;2-5

    3. Unconventional Magnetic Behaviour of TbB12 at Low Temperature (pages R13–R15)

      A. Murasik, A. Czopnik, L. Keller, M. Zolliker, N. Shitsevalova and Y. Paderno

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<R13::AID-PSSB999913>3.0.CO;2-O

    4. Papers presented at the International Workshop on Nitride Semiconductors (IWN 2002) (page 711)

      Axel Hoffmann and Angela Rizzi

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<711::AID-PSSB711>3.0.CO;2-W

    5. Photoreflectance Studies of AlGaN/GaN Heterostructures Containing a Polarisation Induced 2DEG (pages 713–716)

      R. Goldhahn, C. Buchheim, S. Shokhovets, G. Gobsch, O. Ambacher, A. Link, M. Hermann, M. Stutzmann, Y. Smorchkova, U.K. Mishra and J.S. Speck

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<713::AID-PSSB713>3.0.CO;2-O

    6. AlGaN Nanocolumns and AlGaN/GaN/AlGaN Nanostructures Grown by Molecular Beam Epitaxy (pages 717–721)

      J. Ristić, M.A. Sánchez-García, J.M. Ulloa, E. Calleja, J. Sanchez-Páramo, J.M. Calleja, U. Jahn, A. Trampert and K.H. Ploog

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<717::AID-PSSB717>3.0.CO;2-8

    7. Spontaneous Superlattice Formation in AlGaN Layers Grown by MOCVD on Si(111)-Substrates (pages 722–725)

      A. Strittmatter, L. Reissmann, D. Bimberg, P. Veit and A. Krost

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<722::AID-PSSB722>3.0.CO;2-O

    8. Assessment of AlGaN Growth by Plasma Assisted MBE Using In as a Surfactant (pages 726–729)

      E. Monroy, B. Daudin, N. Gogneau, E. Bellet-Amalric, D. Jalabert and J. Brault

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<726::AID-PSSB726>3.0.CO;2-8

    9. Exciton Confinement in GaN/AlGaN Quantum Wells Enhanced by Non-Abrupt Interfaces (pages 730–733)

      E.W.S. Caetano, V.N. Freire and G.A. Farias

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<730::AID-PSSB730>3.0.CO;2-S

    10. Modulation of Surface Barrier in AlGaN/GaN Heterostructures (pages 734–737)

      G. Koley, Ho-Young Cha, V. Tilak, L.F. Eastman and M.G. Spencer

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<734::AID-PSSB734>3.0.CO;2-C

    11. In-Redistribution in a GaInN Quantum Well upon Thermal Annealing (pages 738–741)

      E. Hahn, A. Rosenauer, D. Gerthsen, J. Off, V. Perez-Solorzano, M. Jetter and F. Scholz

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<738::AID-PSSB738>3.0.CO;2-X

    12. Quantitative Analysis of Absorption and Field-Induced Absorption Changes in InGaN/GaN Quantum Wells (pages 742–745)

      P. Kiesel, F. Renner, M. Kneissl, C.G.Van de Walle, G. H. Döhler and N. M. Johnson

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<742::AID-PSSB742>3.0.CO;2-G

    13. Recombination Dynamics of Localized Excitons in Cubic Phase InxGa1—xN/GaN Multiple Quantum Wells on 3C-SiC/Si (001) (pages 746–749)

      SF. Chichibu, T. Onuma, T. Kitamura, T. Sota, S.P. DenBaars, S. Nakamura and H. Okumura

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<746::AID-PSSB746>3.0.CO;2-0

    14. Optical Properties of InxGa1—xN with Entire Alloy Composition on InN Buffer Layer Grown by RF-MBE (pages 750–754)

      M. Hori, K. Kano, T. Yamaguchi, Y. Saito, T. Araki, Y. Nanishi, N. Teraguchi and A. Suzuki

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<750::AID-PSSB750>3.0.CO;2-K

    15. Phonon-Assisted Photoluminescence in InGaN/GaN Multiple Quantum Wells (pages 755–758)

      P.P. Paskov, P.O. Holtz, B. Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<755::AID-PSSB755>3.0.CO;2-0

    16. Pressure Coefficients of the Light Emission in Cubic InGaN Epilayers and Cubic InGaN/GaN Quantum Wells (pages 759–763)

      T. Suski, H. Teisseyre, S.P. Łepkowski, P. Perlin, T. Kitamura, Y. Ishida, H. Okumura and SF. Chichibu

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<759::AID-PSSB759>3.0.CO;2-L

    17. Small Built-in Electric Fields in Quaternary InAlGaN Heterostructures (pages 764–768)

      H. Teisseyre, T. Suski, S.P. Łepkowski, S. Anceau, P. Perlin, P. Lefebvre, L. Kończewicz, H. Hirayama and Y. Aoyagi

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<764::AID-PSSB764>3.0.CO;2-0

    18. Modelling of Polarization Charge-Induced Asymmetry of I–V Characteristics of AlN/GaN-Based Resonant Tunnelling Structures (pages 769–772)

      K.M. Indlekofer, E. Donà, J. Malindretos, M. Bertelli, M. Kočan, A. Rizzi and H. Lüth

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<769::AID-PSSB769>3.0.CO;2-H

    19. Surface Potential at as-Grown GaN(0001) MBE Layers (pages 773–777)

      M. Kočan, A. Rizzi, H. Lüth, S. Keller and U.K. Mishra

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<773::AID-PSSB773>3.0.CO;2-0

    20. Light-Hole and Heavy-Hole Excitons: the Right Probe for the Physics of Low N Content GaAsN (pages 778–781)

      T. Taliercio, B. Gil, P. Lefebvre, M.-A. Pinault and E. Tournié

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<778::AID-PSSB778>3.0.CO;2-H

    21. Physical Mechanisms of Photoluminescence of InGaAs(N) Alloy Films Grown by MOVPE (pages 782–786)

      S. Sanorpim, F. Nakajima, S. Imura, R. Katayama, J. Wu, K. Onabe and Y. Shiraki

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<782::AID-PSSB782>3.0.CO;2-0

    22. Band Gap of Hexagonal InN and InGaN Alloys (pages 787–795)

      V.Yu. Davydov, A.A. Klochikhin, V.V. Emtsev, D.A. Kurdyukov, S.V. Ivanov, V.A. Vekshin, F. Bechstedt, J. Furthmüller, J. Aderhold, J. Graul, A.V. Mudryi, H. Harima, A. Hashimoto, A. Yamamoto and E.E. Haller

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<787::AID-PSSB787>3.0.CO;2-H

    23. Growth Temperature Dependence of Indium Nitride Crystalline Quality Grown by RF-MBE (pages 796–800)

      Y. Saito, H. Harima, E. Kurimoto, T. Yamaguchi, N. Teraguchi, A. Suzuki, T. Araki and Y. Nanishi

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<796::AID-PSSB796>3.0.CO;2-H

    24. Structure Analysis of InN Film Using Extended X-Ray Absorption Fine Structure Method (pages 801–804)

      T. Miyajima, Y. Kudo, K.-L. Liu, T. Uruga, T. Honma, Y. Saito, M. Hori, Y. Nanishi, T. Kobayashi and S. Hirata

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<801::AID-PSSB801>3.0.CO;2-W

    25. Transport Properties of 2DEGs in AlGaN/GaN Heterostructures: Spin Splitting and Occupation of Higher Subbands (pages 805–809)

      A. Link, T. Graf, O. Ambacher, A. Jimenez, E. Calleja, Y. Smorchkova, J. Speck, U. Mishra and M. Stutzmann

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<805::AID-PSSB805>3.0.CO;2-G

    26. Experimental and Theoretical Studies of Transient Electron Velocity Overshoot in GaN (pages 810–816)

      M. Wraback, H. Shen, S. Rudin and E. Bellotti

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<810::AID-PSSB810>3.0.CO;2-W

    27. Recent Progress in GaN-Based Superlattices for Near-Infrared Intersubband Transitions (pages 817–821)

      H.M. Ng, C. Gmachl, J.D. Heber, J.W.P. Hsu, S.N.G. Chu and A.Y. Cho

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<817::AID-PSSB817>3.0.CO;2-4

    28. GaN/AlGaN Two-Dimensional Electron Gas Grown by Ammonia-MBE on MOCVD GaN Template (pages 822–825)

      H. Tang, J.B. Webb, S. Rolfe, J.A. Bardwell, D. Tomka, P. Coleridge, C.H. Ko, Y.K. Su and S.J. Chang

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<822::AID-PSSB822>3.0.CO;2-K

    29. Fast and Ultrafast Processes in AlGaN/GaN Channels (pages 826–829)

      A. Matulionis, J. Liberis, L. Ardaravičius, M. Ramonas, T. Zubkutė, I. Matulionienė, L.F. Eastman, J.R. Shealy, J. Smart, D. Pavlidis and S. Hubbard

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<826::AID-PSSB826>3.0.CO;2-4

    30. Relation between Microstructure and 2DEG Properties of AlGaN/GaN Structures (pages 830–834)

      B. Van Daele, G. Van Tendeloo, M. Germain, M. Leys, Z. Bougrioua and I. Moerman

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<830::AID-PSSB830>3.0.CO;2-O

    31. Reduction of Planar Defect Density in Laterally Overgrown Cubic-GaN on Patterned GaAs(001) Substrates by MOVPE (pages 840–844)

      S. Sanorpim, E. Takuma, R. Katayama, K. Onabe, H. Ichinose and Y. Shiraki

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<840::AID-PSSB840>3.0.CO;2-K

    32. Intentional Control of n-type Conduction for Si-doped AlN and AlxGa1—xN with High Al Content (pages 845–849)

      Y. Taniyasu, M. Kasu and N. Kobayashi

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<845::AID-PSSB845>3.0.CO;2-0

    33. Mg Incorporation in AlGaN Layers Grown on Grooved Sapphire Substrates (pages 850–854)

      D. Cherns, M.Q. Baines, Y.Q. Wang, R. Liu, F.A. Ponce, H. Amano and I. Akasaki

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<850::AID-PSSB850>3.0.CO;2-G

    34. Growth of AlxGa1—xN and Mg-Doped GaN Epilayers on Ga- and N-Faces of Bulk GaN Single Crystal Substrates by Molecular-Beam Epitaxy (pages 855–858)

      M. Konishi, T. Tanabe, S. Kubo, S. Kurai, T. Taguchi, K. Kainosho and A. Yokohata

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<855::AID-PSSB855>3.0.CO;2-X

    35. Electrical Properties of SiO2/n-GaN Metal–Insulator–Semiconductor Structures (pages 859–863)

      Y. Nakano and T. Jimbo

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<859::AID-PSSB859>3.0.CO;2-H

    36. Carbon-Based Defects in GaN: Doping Behaviour (pages 864–867)

      L.E. Ramos, J. Furthmüller, J.R. Leite, L.M.R. Scolfaro and F. Bechstedt

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<864::AID-PSSB864>3.0.CO;2-X

    37. Determination of Si δ-Doping Concentration in GaN by Electroreflectance (pages 868–871)

      A. Drabińska, K.P. Korona, R. Bożek, A. Babiński, J.M. Baranowski, W. Pacuski, R. Stȩpniewski and T. Tomaszewicz

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<868::AID-PSSB868>3.0.CO;2-H

    38. Hall Effect Data Analysis of GaN n+n Structures (pages 872–876)

      B. Arnaudov, T. Paskova, S. Evtimova, M. Heuken and B. Monemar

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<872::AID-PSSB872>3.0.CO;2-0

    39. Photoconductivity and Electroreflectance Study of Cubic GaN/GaAs(001) Heterostructures by Optical-Biasing Technique (pages 877–881)

      R. Katayama, M. Kuroda, K. Onabe and Y. Shiraki

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<877::AID-PSSB877>3.0.CO;2-H

    40. Electronic Band Structure of Strained C- and M-Plane GaN Films Investigated by Polarized Photoreflectance Spectroscopy (pages 882–886)

      S. Ghosh, O. Brandt, H.T. Grahn and K.H. Ploog

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<882::AID-PSSB882>3.0.CO;2-X

    41. Optical Characterization of AlxGa1—xN Alloys (x < 0.7) Grown on Sapphire or Silicon (pages 887–891)

      M. Leroux, S. Dalmasso, F. Natali, S. Helin, C. Touzi, S. Laügt, M. Passerel, F. Omnes, F. Semond, J. Massies and P. Gibart

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<887::AID-PSSB887>3.0.CO;2-D

    42. Anisotropy of the In-Plane Strain in GaN Grown on A-Plane Sapphire (pages 892–896)

      P.P. Paskov, V. Darakchieva, T. Paskova, P.O. Holtz and B. Monemar

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<892::AID-PSSB892>3.0.CO;2-T

    43. Electromechanical Coupling Coefficient for Surface Acoustic Waves in GaN-on-Sapphire (pages 897–900)

      R. Rimeika, D. Ciplys, M.S. Shur, R. Gaska, M.A. Khan and J. Yang

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<897::AID-PSSB897>3.0.CO;2-9

    44. Coupled Free-Carrier and Exciton Dynamics in Bulk Wurtzite GaN (pages 901–905)

      F. Compagnone, G. Kokolakis, A. Di Carlo and P. Lugli

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<901::AID-PSSB901>3.0.CO;2-S

    45. k · p Calculations of Electronic and Optical Properties of p-doped (001) AlGaN/GaN Thin Superlattices (pages 906–910)

      S.C.P. Rodrigues, L.M.R. Scolfaro, G.M. Sipahi, O.C. Noriega and J.R. Leite

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<906::AID-PSSB906>3.0.CO;2-8

    46. Correlation of Surface Potential, Free Carrier Concentration and Light Emission in ELO GaN Growth Domains (pages 911–914)

      U. Haboeck, A. Kaschner, A. Hoffmann, C. Thomsen, T. Riemann, A. Krtschil, J. Christen, A. Krost, M. Seyboth and F. Habel

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<911::AID-PSSB911>3.0.CO;2-O

    47. Optical Properties of RF-MBE Grown AlGaAsN (pages 915–918)

      K. Yamamoto, M. Uchida, A. Yamamoto, A. Masuda and A. Hashimoto

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<915::AID-PSSB915>3.0.CO;2-8

    48. Nanometric-Scale Fluctuations of Intrinsic Electric Fields in GaN/AlGaN Quantum Wells with Inversion Domains (pages 919–923)

      T.V. Shubina, V.N. Jmerik, M.G. Tkachman, V.A. Vekshin, V.V. Ratnikov, A.A. Toropov, A.A. Sitnikova, S.V. Ivanov, J.P. Bergman, F. Karlsson, P. Holtz and B. Monemar

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<919::AID-PSSB919>3.0.CO;2-T

    49. Electron Holography Studies of the Charge on Dislocations in GaN (pages 924–930)

      D. Cherns, C.G. Jiao, H. Mokhtari, J. Cai and F.A. Ponce

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<924::AID-PSSB924>3.0.CO;2-8

    50. Controlling the Morphology of GaN Layers Grown on AlN in Ga Self-Surfactant Conditions: from Quantum Wells to Quantum Dots (pages 931–934)

      C. Adelmann, B. Daudin, E. Monroy, E. Sarigiannidou, J.L. Rouvière, Y. Hori, J. Brault, N. Gogneau, S. Fanget and C. Bru-Chevallier

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<931::AID-PSSB931>3.0.CO;2-G

    51. Origin of Inversion Domains in GaN/AlN/Si(111) Heterostructures Grown by Molecular Beam Epitaxy (pages 935–938)

      A.M. Sanchez, P. Ruterana, S.I. Molina, F.J. Pacheco and R. Garcia

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<935::AID-PSSB935>3.0.CO;2-0

    52. Lateral Arrangement of Self-Assembled GaN Islands on Periodically Stepped AlN Surfaces (pages 939–942)

      J. Brault, S. Tanaka, E. Sarigiannidou, H. Nakagawa, J.-L. Rouvière, G. Feuillet and B. Daudin

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<939::AID-PSSB939>3.0.CO;2-L

    53. Microstructural Investigation and Magnetic Properties of p-type GaN Implanted with Mn+ Ions (pages 943–946)

      J.M. Baik, J.K. Kim, H.W. Jang, Y. Shon, T.W. Kang and J.-L. Lee

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<943::AID-PSSB943>3.0.CO;2-4

    54. Comparison of the Morphology and In Distribution of Capped and Uncapped InGaN Layers by Transmission Electron Microscopy (pages 947–951)

      V. Potin, A. Rosenauer, D. Gerthsen, B. Kuhn and F. Scholz

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<947::AID-PSSB947>3.0.CO;2-P

    55. Migration of Dislocations in Strained GaN Heteroepitaxial Layers (pages 952–955)

      S.-L. Sahonta, M.Q. Baines, D. Cherns, H. Amano and F.A. Ponce

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<952::AID-PSSB952>3.0.CO;2-4

    56. Phase Separation, Gap Bowing, and Structural Properties of Cubic InxAl1—xN (pages 956–960)

      L.K. Teles, L. M. R. Scolfaro, J. Furthmüller, F. Bechstedt and J. R. Leite

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<956::AID-PSSB956>3.0.CO;2-P

    57. Characterization of Crack-Free AlN/GaN Multiple Quantum Wells Grown by Metalorganic Vapor Phase Epitaxy Using H2 as a Carrier Gas (pages 961–964)

      I. Waki, C. Kumtornkittikul, K. Sato, Y. Shimogaki and Y. Nakano

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<961::AID-PSSB961>3.0.CO;2-4

    58. Electronic and Phonon Deformation Potentials of GaN and AlN: Ab initio Calculations versus Experiment (pages 965–969)

      J.-M. Wagner and F. Bechstedt

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<965::AID-PSSB965>3.0.CO;2-P

    59. Optical Phonons in Hexagonal AlxInyGa1–xyN (y ≈ 0.12) (pages 970–974)

      A. Kasic, M. Schubert, J. Off, F. Scholz, S. Einfeldt and D. Hommel

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<970::AID-PSSB970>3.0.CO;2-4

    60. Raman Spectroscopy as a Tool for Characterization of Strained Hexagonal GaN/AlxGa1—xN Superlattices (pages 975–979)

      V.Yu. Davydov, A.N. Smirnov, I.N. Goncharuk, R.N. Kyutt, M.P. Scheglov, M.V. Baidakova, W.V. Lundin, E.E. Zavarin, M.B. Smirnov, S.V. Karpov and H. Harima

      Version of Record online: 3 DEC 2002 | DOI: 10.1002/1521-3951(200212)234:3<975::AID-PSSB975>3.0.CO;2-L

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