physica status solidi (a)

Cover image for physica status solidi (a)

July 1997

Volume 162, Issue 1

Pages 5–511

Currently known as: physica status solidi (a)

    1. Optical Characterization of Silicon Carbide Polytypes (pages 5–38)

      R. P. Devaty and W. J. Choyke

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-396X(199707)162:1<5::AID-PSSA5>3.0.CO;2-J

    2. Raman Investigation of SiC Polytypes (pages 39–64)

      S. Nakashima and H. Harima

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-396X(199707)162:1<39::AID-PSSA39>3.0.CO;2-L

    3. Time Resolved Spectroscopy of Defects in SiC (pages 65–77)

      J. P. Bergman, O. Kordina and E. Janzén

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-396X(199707)162:1<65::AID-PSSA65>3.0.CO;2-2

    4. Effective Masses in SiC Determined by Cyclotron Resonance Experiments (pages 79–93)

      W. M. Chen, N. T. Son, E. Janzén, D. M. Hofmann and B. K. Meyer

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-396X(199707)162:1<79::AID-PSSA79>3.0.CO;2-D

    5. EPR and ENDOR Investigations of Shallow Impurities in SiC Polytypes (pages 95–151)

      S. Greulich-Weber

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-396X(199707)162:1<95::AID-PSSA95>3.0.CO;2-X

    6. Transition Metals in SiC Polytypes, as Studied by Magnetic Resonance Techniques (pages 153–172)

      J. Baur, M. Kunzer and J. Schneider

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-396X(199707)162:1<153::AID-PSSA153>3.0.CO;2-3

    7. Intrinsic Defects in Cubic Silicon Carbide (pages 173–198)

      H. Itoh, A. Kawasuso, T. Ohshima, M. Yoshikawa, I. Nashiyama, S. Tanigawa, S. Misawa, H. Okumura and S. Yoshida

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-396X(199707)162:1<173::AID-PSSA173>3.0.CO;2-W

    8. Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy (pages 199–225)

      T. Dalibor, G. Pensl, H. Matsunami, T. Kimoto, W. J. Choyke, A. Schöner and N. Nordell

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-396X(199707)162:1<199::AID-PSSA199>3.0.CO;2-0

    9. Admittance Spectroscopy of 6H, 4H, and 15R Silicon Carbide (pages 227–238)

      S. R. Smith, A. O. Evwaraye and W. C. Mitchel

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-396X(199707)162:1<227::AID-PSSA227>3.0.CO;2-W

    10. Thermoluminescence and Related Electronic Processes of 4H/6H-SiC (pages 239–249)

      Th. Stiasny and R. Helbig

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-396X(199707)162:1<239::AID-PSSA239>3.0.CO;2-K

    11. Micropipes: Hollow Tubes in Silicon Carbide (pages 251–262)

      J. Heindl, H. P. Strunk, V. D. Heydemann and G. Pensl

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-396X(199707)162:1<251::AID-PSSA251>3.0.CO;2-7

    12. Nitrogen Ion Implantation into α-SiC Epitaxial Layers (pages 263–276)

      T. Kimoto and N. Inoue

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-396X(199707)162:1<263::AID-PSSA263>3.0.CO;2-W

    13. Doping of SiC by Implantation of Boron and Aluminum (pages 277–298)

      T. Troffer, M. Schadt, T. Frank, H. Itoh, G. Pensl, J. Heindl, H. P. Strunk and M. Maier

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-396X(199707)162:1<277::AID-PSSA277>3.0.CO;2-C

    14. Orientation Dependence of the Oxidation of SiC Surfaces (pages 299–304)

      K. Ueno

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-396X(199707)162:1<299::AID-PSSA299>3.0.CO;2-X

    15. Advances in SiC MOS Technology (pages 305–320)

      J. A. Cooper, Jr.

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-396X(199707)162:1<305::AID-PSSA305>3.0.CO;2-7

    16. Intrinsic SiC/SiO2 Interface States (pages 321–337)

      V. V. Afanasev, M. Bassler, G. Pensl and M. Schulz

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-396X(199707)162:1<321::AID-PSSA321>3.0.CO;2-F

    17. Electron Transport at the SiC/SiO2 Interface (pages 339–368)

      T. Ouisse

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-396X(199707)162:1<339::AID-PSSA339>3.0.CO;2-G

    18. SiC Integrated MOSFETs (pages 369–388)

      S. Onda, R. Kumar and K. Hara

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-396X(199707)162:1<369::AID-PSSA369>3.0.CO;2-4

    19. Experimental and Simulated Results of SiC Microwave Power MESFETs (pages 409–419)

      R. J. Trew

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-396X(199707)162:1<409::AID-PSSA409>3.0.CO;2-O

    20. Simulation of SiC High Power Devices (pages 421–440)

      M. Bakowski, U. Gustafsson and U. Lindefelt

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-396X(199707)162:1<421::AID-PSSA421>3.0.CO;2-B

    21. SiC for Microwave Power Transistors (pages 441–457)

      S. Sriram, R. R. Siergiej, R. C. Clarke, A. K. Agarwal and C. D. Brandt

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-396X(199707)162:1<441::AID-PSSA441>3.0.CO;2-3

    22. Silicon Carbide MOSFET Integrated Circuit Technology (pages 459–479)

      D. M. Brown, E. Downey, M. Ghezzo, J. Kretchmer, V. Krishnamurthy, W. Hennessy and G. Michon

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-396X(199707)162:1<459::AID-PSSA459>3.0.CO;2-4

    23. 6H-Silicon Carbide Light Emitting Diodes and UV Photodiodes (pages 481–491)

      J. Edmond, H. Kong, A. Suvorov, D. Waltz and C. Carter, Jr.

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-396X(199707)162:1<481::AID-PSSA481>3.0.CO;2-O

    24. High Temperature Sensors Based on Metal–Insulator–Silicon Carbide Devices (pages 493–511)

      A. Lloyd Spetz, A. Baranzahi, P. Tobias and I. Lundström

      Version of Record online: 16 NOV 2001 | DOI: 10.1002/1521-396X(199707)162:1<493::AID-PSSA493>3.0.CO;2-C

SEARCH

SEARCH BY CITATION