physica status solidi (a)

Cover image for physica status solidi (a)

July 2000

Volume 180, Issue 1

Pages R1–R3, 5–407

Currently known as: physica status solidi (a)

    1. Observation of Misfit Dislocation Strain-Induced Surface Features for a Si/Ge–Si Heterostructure Using Total Reflection X-Ray Topography (pages R1–R3)

      P.J. McNally, G. Dilliway, J.M. Bonar, A. Willoughby, T. Tuomi, R. Rantamäki, A.N. Danilewsky and D. Lowney

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<R1::AID-PSSA99991>3.0.CO;2-B

    2. GaN-Based LEDs and Lasers on SiC (pages 5–13)

      V. Härle, B. Hahn, H.-J. Lugauer, S. Bader, G. Brüderl, J. Baur, D. Eisert, U. Strauss, U. Zehnder, A. Lell and N. Hiller

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<5::AID-PSSA5>3.0.CO;2-I

    3. Cubic GaN Films on GaAs (001) Substrates without Deep-Level Luminescence Grown by Metalorganic Vapor Phase Epitaxy (pages 15–19)

      K. Onabe, J. Wu, R. Katayama, F.H. Zhao, A. Nagayama and Y. Shiraki

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<15::AID-PSSA15>3.0.CO;2-B

    4. High-Power Operation of ZnSe-Based cw-Laser Diodes (pages 21–26)

      M. Klude, M. Fehre and D. Hommel

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<21::AID-PSSA21>3.0.CO;2-X

    5. Radiative Recombination Dynamics of Carriers in InxGa1–xN Epitaxial Layers Revealed by Temperature Dependence of Time-Resolved Photoluminescence Spectra (pages 27–31)

      H. Kudo, T. Tanabe, H. Ishibashi, R. Zheng, Y. Yamada and T. Taguchi

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<27::AID-PSSA27>3.0.CO;2-Y

    6. A Blue Resonant Cavity Light Emitting Diode (pages 33–35)

      Y.-K. Song, M. Diagne, H. Zhou, A.V. Nurmikko Jr. and R.P. Schneider

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<33::AID-PSSA33>3.0.CO;2-J

    7. Novel II–VI Light Emitting Diodes Fabricated on InP Substrates Applying Wide-Gap and Highly p-Dopable BeZnTe for p-Cladding Layers (pages 37–43)

      T. Takada, Song-Bek Che, I. Nomura, A. Kikuchi, K. Shimomura and K. Kishino

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<37::AID-PSSA37>3.0.CO;2-W

    8. Control of Initial Nucleation by Reducing the V/III Ratio during the Early Stages of GaN Growth (pages 45–50)

      T. Yang, K. Uchida, T. Mishima, J. Kasai and J. Gotoh

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<45::AID-PSSA45>3.0.CO;2-5

    9. GaN Bulk Substrates for GaN Based LEDs and LDs (pages 51–58)

      O. Oda, T. Inoue, Y. Seki, K. Kainosho, S. Yaegashi, A. Wakahara, A. Yoshida, S. Kurai, Y. Yamada and T. Taguchi

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<51::AID-PSSA51>3.0.CO;2-R

    10. The Effects of Atomic Hydrogen on Indium Incorporation and Ordering in InGaN Grown by RF-MBE (pages 59–64)

      Y. Okamoto, K. Takahashi, H. Nakamura, Y. Okada and M. Kawabe

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<59::AID-PSSA59>3.0.CO;2-G

    11. Suppression of Inversion Domains and Decrease of Threading Dislocations in Migration Enhanced Epitaxial GaN by RF-Molecular Beam Epitaxy (pages 65–71)

      D. Sugihara, A. Kikuchi, K. Kusakabe, S. Nakamura, Y. Toyoura, T. Yamada and K. Kishino

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<65::AID-PSSA65>3.0.CO;2-1

    12. Morphology of GaN Surfaces and GaN/(Al,Ga)N Interfaces Grown on 6H-SiC(0001) by Reactive Molecular Beam Epitaxy (pages 73–79)

      A. Thamm, O. Brandt, A. Trampert and K.H. Ploog

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<73::AID-PSSA73>3.0.CO;2-B

    13. Effect of Pits in InGaN/GaN Multi-Quantum Wells on the Strain and In Composition Segregation (pages 81–84)

      Z.J. Yang, Y.Z. Tong, G.Y. Zhang, X.L. Du, N. Fujii, A.W. Jia and A. Yoshikawa

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<81::AID-PSSA81>3.0.CO;2-L

    14. Multiple Peak Spectra from InGaN/GaN Multiple Quantum Wells (pages 85–89)

      G. Pozina, J.P. Bergman, B. Monemar, T. Takeuchi, H. Amano and I. Akasaki

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<85::AID-PSSA85>3.0.CO;2-Y

    15. Lasing in Vertical Direction in Structures with InGaN Quantum Dots (pages 91–96)

      I.L. Krestnikov, A.V. Sakharov, W.V. Lundin, A.S. Usikov, A.F. Tsatsulnikov, N.N. Ledentsov, Zh.I. Alferov, I.P. Soshnikov, D. Gerthsen, A.C. Plaut, J. Holst, A. Hoffmann and D. Bimberg

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<91::AID-PSSA91>3.0.CO;2-J

    16. Study of the Effects of Mg and Be Co-Doping in GaN Layers (pages 97–102)

      F.B. Naranjo, M. A. Sánchez-García, J. L. Pau, A. Jiménez, E. Calleja, E. Muñoz, J. Oila, K. Saarinen and P. Hautojárvi

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<97::AID-PSSA97>3.0.CO;2-K

    17. Low Resistance and Thermally Stable Pt/Ru Ohmic Contacts to p-Type GaN (pages 103–107)

      Ja-Soon Jang, Seong-Ju Park and Tae-Yeon Seong

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<103::AID-PSSA103>3.0.CO;2-M

    18. MOVPE Growth Optimization Using Computer Supported Design of Experiments (DoE) (pages 109–114)

      A. Alam, O. Schön, B. Schineller, M. Heuken and H. Jürgensen

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<109::AID-PSSA109>3.0.CO;2-Z

    19. Thermodynamic Analysis of the MOVPE Growth of InAlN (pages 115–120)

      A. Koukitu, Y. Kumagai and H. Seki

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<115::AID-PSSA115>3.0.CO;2-A

    20. Light Emitting Diode with Charge Asymmetric Resonance Tunneling (pages 121–126)

      Y.T. Rebane, Y.G. Shreter, B.S. Yavich, V.E. Bougrov, S.I. Stepanov and W.N. Wang

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<121::AID-PSSA121>3.0.CO;2-M

    21. Scale Effects on Exciton Localization and Nonradiative Processes in GaN/AlGaN Quantum Wells (pages 127–132)

      M. Gallart, A. Morel, T. Taliercio, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, M. Leroux and J. Massies

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<127::AID-PSSA127>3.0.CO;2-Z

    22. Growth of M-Plane GaN(11-00): A Way to Evade Electrical Polarization in Nitrides (pages 133–138)

      P. Waltereit, O. Brandt, M. Ramsteiner, A. Trampert, H.T. Grahn, J. Menniger, M. Reiche, R. Uecker, P. Reiche and K.H. Ploog

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<133::AID-PSSA133>3.0.CO;2-A

    23. CW Operation of InGaN MQW Laser Diodes (pages 139–147)

      D.P. Bour, M. Kneissl, C.G. Van de Walle, J. Northrup, L.T. Romano, M. Teepe, R. Wood, T. Schmidt and N.M. Johnson

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<139::AID-PSSA139>3.0.CO;2-N

    24. Stimulated Emission, Electro- and Photoluminescence of InGaN/GaN EL-Test and SQW Heterostructures Grown by MOVPE (pages 149–155)

      G.P. Yablonskii, E.V. Lutsenko, I.P. Marko, V.N. Pavlovskii, A.V. Mudryi, A.I. Stognij, O. Schön, H. Protzmann, M. Lünenbürger, B. Schneller, M. Heuken and K. Heime

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<149::AID-PSSA149>3.0.CO;2-J

    25. 230 to 250 nm Intense Emission from AlN/AlGaN Quantum Wells (pages 157–161)

      H. Hirayama, Y. Enomoto, A. Kinoshita, A. Hirata and Y. Aoyagi

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<157::AID-PSSA157>3.0.CO;2-N

    26. CW Operation of (In,Ga)N MQW Laser Diodes on FIELO-GaN Substrates (pages 163–169)

      M. Mizuta

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<163::AID-PSSA163>3.0.CO;2-Z

    27. Behavior of Threading Dislocations in SAG-GaN Grown by MOVPE (pages 171–175)

      K. Horibuchi, N. Kuwano, K. Oki, Y. Kawaguchi, N. Sawaki and K. Hiramatsu

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<171::AID-PSSA171>3.0.CO;2-2

    28. First European GaN-Based Violet Laser Diode (pages 177–182)

      S. Bader, B. Hahn, H.-J. Lugauer, A. Lell, A. weimar, G. Brüderl, J. Baur, D. Eisert, M. Scheubeck, S. Heppel, A. Hangleiter and V. Härle

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<177::AID-PSSA177>3.0.CO;2-F

    29. Growth of Bulk-ZnS by Solid Phase Recrystallization (pages 183–187)

      M. Yoneta, H. Uechi, K. Ichino, K. Yoshino, H. Kobayashi, T. Ikari, M. Ohishi and H. Saito

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<183::AID-PSSA183>3.0.CO;2-R

    30. Thermally Induced Strain in ZnSe and GaN Epitaxial Layers Studied by High-Resolution X-Ray Diffraction at Variable Temperatures (pages 189–194)

      H. Heinke, L. Haase, V. Grossmann, V. Kirchner and D. Hommel

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<189::AID-PSSA189>3.0.CO;2-3

    31. Magneto-Optical Characterization of the Nitrogen-Related Impurities in p-Type ZnSe Epilayers (pages 195–199)

      L. Gravier, H. Makino, K. Arai, H. Sasaki, K. Kimura, S. Miwa and T. Yao

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<195::AID-PSSA195>3.0.CO;2-F

    32. Nonradiative Carrier Recombination Centers of Cl-Doped ZnSe Epitaxial Layers (pages 201–205)

      K. Yoshino, H. Mikami, M. Yoneta, H. Saito, M. Ohishi and T. Ikari

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<201::AID-PSSA201>3.0.CO;2-Q

    33. Temperature-Dependent Photoluminescence Study on CdZnS/ZnS/MgZnS Separate-Confinement Heterostructures (pages 207–211)

      K. Yoshimura, S. Ishizaki, Y. Yamada and T. Taguchi

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<207::AID-PSSA207>3.0.CO;2-2

    34. Optimised Implantation-Induced Disordering for Lowering the Threshold Current Density of II–VI Laser Diodes (pages 213–216)

      O. Schulz, M. Strassburg, U.W. Pohl, D. Bimberg, S. Itoh, K. Nakano, A. Ishibashi, M. Klude and D. Hommel

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<213::AID-PSSA213>3.0.CO;2-E

    35. Blue-Green Light Emitting Diodes with New p-Contact Layers: ZnSe/BeTe (pages 217–223)

      M.W. Cho, J.H. Chang, H. Wenisch, H. Makino and T. Yao

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<217::AID-PSSA217>3.0.CO;2-Z

    36. ZnSe/BeTe Type-II Light Emitting Diodes (pages 225–229)

      G. Reuscher, M. Keim, H.J. Lugauer, A. Waag and G. Landwehr

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<225::AID-PSSA225>3.0.CO;2-2

    37. Room-Temperature Photoluminescence from BAlGaN-Based Double or Single Heterostructures for UV Laser Diode (pages 231–234)

      T. Takano, M. Kurimoto, J. Yamamoto, M. Shibata, Y. Ishihara, M. Tsubamoto, T. Honda and H. Kawanishi

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<231::AID-PSSA231>3.0.CO;2-E

    38. High Quality Epitaxial Growth of Hexagonal GaN on Al2O3(0001) and Cubic GaN on GaAs(100) by Molecular Beam Epitaxy (pages 235–239)

      R. Kimura and K. Takahashi

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<235::AID-PSSA235>3.0.CO;2-Z

    39. Cubic InGaN/GaN Double-Heterostructure Light Emitting Diodes Grown on GaAs (001) Substrates by MOVPE (pages 241–246)

      Y. Taniyasu, K. Suzuki, D.H. Lim, A.W. Jia, M. Shimotomai, Y. Kato, M. Kobayashi, A. Yoshikawa and K. Takahashi

      Version of Record online: 24 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<241::AID-PSSA241>3.0.CO;2-A

    40. Lateral Epitaxial Overgrowth of GaN and Its Crystallographic Tilt Depending on the Growth Condition (pages 247–250)

      Y.H. Song, S.C. Choi, J.Y. Choi, J.W. Yang and G.M. Yang

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<247::AID-PSSA247>3.0.CO;2-N

    41. Ammonia Cluster Beam for Group-III Nitride Synthesis (pages 251–256)

      H. Saito, T. Kato, M. Yoneta, M. Ohishi, J. Matsuo and I. Yamada

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<251::AID-PSSA251>3.0.CO;2-6

    42. Hydride Vapour Phase Epitaxy Growth of GaN Layers under Reduced Reactor Pressure (pages 257–260)

      H.Y.A. Chung, C. Wang, Ch. Kirchner, M. Seyboth, V. Schwegler, M. Scherer, M. Kamp, K.J.E. Ebeling, R. Beccard and M. Heuken

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<257::AID-PSSA257>3.0.CO;2-J

    43. The Red (1.8 eV) Luminescence in Epitaxially Grown GaN (pages 261–265)

      D.M. Hofmann, B.K. Meyer, H. Alves, F. Leiter, W. Burkhard, N. Romanov, Y. Kim, J. Krüger and E.R. Weber

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<261::AID-PSSA261>3.0.CO;2-2

    44. Development of Pure Green LEDs Based on ZnTe (pages 267–274)

      K. Sato, T. Asahi, M. Hanafusa, A. Noda, A. Arakawa, M. Uchida, O. Oda, Y. Yamada and T. Taguchi

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<267::AID-PSSA267>3.0.CO;2-F

    45. BeCdSe/(Be,Zn)Se Quantum Well as a New Active Region for Blue-Green II–VI Lasers and Light-Emitting Diodes (pages 275–280)

      S.V. Ivanov, A.A. Toropov, T.V. Shubina, S.V. Sorokin, O.V. Nekrutkina, V.A. Kaygorodov, P.S. Kopv, G. Reuscher, M. Keim, A. Waag and G. Landwehr

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<275::AID-PSSA275>3.0.CO;2-J

    46. Resonant Gain in ZnSe Structures with Stacked CdSe Islands Grown in Stranski-Krastanov Mode (pages 281–285)

      M. Strassburg, M. Dworzak, A. Hoffmann, R. Heitz, U.W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen, I. Kudryashov, K. Lischka and D. Schikora

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<281::AID-PSSA281>3.0.CO;2-V

    47. Improvement of Electrical Properties in ZnO Thin Films Grown by Radical Source(RS)-MBE (pages 287–292)

      K. Iwata, P. Fons, S. Niki, A. Yamada, K. Matsubara, K. Nakahara and H. Takasu

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<287::AID-PSSA287>3.0.CO;2-7

    48. (Al,Ga)N Ultraviolet Photodetectors and Applications (pages 293–300)

      E. Muñoz, E. Monroy, J.L. Pau, F. Calle, E. Calleja, F. Omnes and P. Gibart

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<293::AID-PSSA293>3.0.CO;2-J

    49. ZnSe- and ZnMgBeSe-Based Schottky Barrier Photodetectors for the Blue and Ultraviolet Spectral Range (pages 301–305)

      F. Vigué, A. Bouillé, E. Tournié and J.-P. Faurie

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<301::AID-PSSA301>3.0.CO;2-M

    50. III-Nitride Unipolar Light Emitting Devices (pages 307–313)

      Y.G. Shreter, Y.T. Rebane and W.N. Wang

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<307::AID-PSSA307>3.0.CO;2-Z

    51. Investigations on Structural Properties of GaInN–GaN Multi Quantum Well Structures (pages 315–320)

      F. Scholz, J. Off, E. Fehrenbacher, O. Gfrörer and G. Brockt

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<315::AID-PSSA315>3.0.CO;2-2

    52. Effective Localization of Quantum Well Excitons in InGaN Quantum Well Structures with High InN Mole Fraction (pages 321–325)

      S.F. Chichibu, A. Setoguchi, T. Azuhata, J. Müllhäuser, M. Sugiyama, T. Mizutani, T. Deguchi, H. Nakanishi, T. Sota, O. Brandt, K.H. Ploog, T. Mukai and S. Nakamura

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<321::AID-PSSA321>3.0.CO;2-E

    53. Comparison of the Mechanism of Optical Amplification in InGaN/GaN Heterostructures Grown by Molecular Beam Epitaxy and MOCVD (pages 327–332)

      J. Holst, A. Kaschner, U. Gfug, A. Hoffmann, C. Thomsen, F. Bertram, T. Riemann, D. Rudloff, P. Fischer, J. Christen, R. Averbeck, H. Riechert, M. Heuken, M. Schwambera and O. Schön

      Version of Record online: 24 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<327::AID-PSSA327>3.0.CO;2-R

    54. Si Based Green ELD: Si–Oxygen Superlattice (pages 333–338)

      Raphael Tsu

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<333::AID-PSSA333>3.0.CO;2-2

    55. Photoluminescence of GaN Quantum Wells with AlGaN Barriers of High Aluminium Content (pages 339–343)

      J.C. Harris, T. Someya, K. Hoshino, S. Kako and Y. Arakawa

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<339::AID-PSSA339>3.0.CO;2-F

    56. Cross-Sectional Scanning Tunneling Microscopy Characterization of Cubic GaN Epilayers Grown on (001) GaAs (pages 345–350)

      T. Kazama, F. Yasunaga, Y. Taniyasu, A. Jia, Y. Kato, M. Kobayashi, A. Yoshikawa and K. Takahashi

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<345::AID-PSSA345>3.0.CO;2-R

    57. A Study of Sulphur Diffusion in ZnMgSSe/ZnSe Quantum Wells by Energy-Loss Imaging in a Transmission Electron Microscope (pages 351–356)

      T. Walther, H. Kalisch, K. Heime, M. Heuken, I. Marko and G.P. Yablonskii

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<351::AID-PSSA351>3.0.CO;2-2

    58. Characteristics of the GaN Polar Surface during an Etching Process in KOH Solution (pages 357–362)

      Dongsheng Li, M. Sumiya, K. Yoshimura, Y. Suzuki, Y. Fukuda and S. Fuke

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<357::AID-PSSA357>3.0.CO;2-F

    59. Improved Radiative Efficiency using Self-Formed GaInN/GaN Quantum Dots Grown by Molecular Beam Epitaxy (pages 363–368)

      B. Damilano, N. Grandjean, J. Massies, S. Dalmasso, J.L. Reverchon, M. Calligaro, J.Y. Duboz, L. Siozade and J. Leymarie

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<363::AID-PSSA363>3.0.CO;2-R

    60. Growth and Characterization of a Cubic GaN p–n Light Emitting Diode on GaAs (001) Substrates (pages 369–374)

      D.J. As, A. Richter, J. Busch, M. Lübbers, J. Mimkes and K. Lischka

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<369::AID-PSSA369>3.0.CO;2-3

    61. Time-Resolved Spectroscopy of MBE-Grown InGaN/GaN Self-Formed Quantum Dots (pages 375–380)

      A. Morel, M. Gallart, T. Taliercio, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, B. Damilano, N. Grandjean and J. Massies

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<375::AID-PSSA375>3.0.CO;2-F

    62. Temperature Dependence of the Photoreflectance Lineshape for GaN Films Grown by Molecular Beam Epitaxy (pages 381–386)

      U. Behn, A. Thamm, O. Brandt and H.T. Grahn

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<381::AID-PSSA381>3.0.CO;2-R

    63. Optically Pumped Quasi-Continuous Wave Violet Vertical Cavity Surface Emitting Lasers (pages 387–389)

      Y.-K. Song, H. Zhou, M. Diagne, A.V. Nurmikko, R.P. Schneider, C.P. Kuo, M.R. Krames, R.S. Kern, C. Carter-Coman and F.A. Kish

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<387::AID-PSSA387>3.0.CO;2-3

    64. Gain Saturation in (In,Ga)N/GaN/(Al,Ga)N Laser Structures (pages 391–396)

      P. Michler, O. Lange, M. Vehse, J. Gutowski, S. Bader, B. Hahn, H.-J. Lugauer and V. Härle

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<391::AID-PSSA391>3.0.CO;2-N

    65. Current Injection Emission at 333 nm from Al0.03Ga0.97N/Al0.25Ga0.75N Multi Quantum Well Ultraviolet Light Emitting Diodes (pages 397–401)

      A. Kinoshita, H. Hirayama, J.S. Kim, M. Ainoya, A. Hirata and Y. Aoyagi

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<397::AID-PSSA397>3.0.CO;2-#

    66. Optical Properties of Cubic GaN Grown on 3C-SiC (100) Substrates by Metalorganic Vapor Phase Epitaxy (pages 403–407)

      J. Wu, H. Yaguchi, B.P. Zhang, Y. Segawa, K. Onabe and Y. Shiraki

      Version of Record online: 21 JUL 2000 | DOI: 10.1002/1521-396X(200007)180:1<403::AID-PSSA403>3.0.CO;2-A

SEARCH

SEARCH BY CITATION