physica status solidi (a)

Cover image for physica status solidi (a)

January 2001

Volume 183, Issue 1

Pages 5–203

Currently known as: physica status solidi (a)

    1. Computed Growth Rates of (001) GaN Substrates in the Hydride Vapour Phase Method (pages 5–9)

      R. Cadoret, A. Trassoudaine and E. Aujol

      Version of Record online: 18 JAN 2001 | DOI: 10.1002/1521-396X(200101)183:1<5::AID-PSSA5>3.0.CO;2-K

    2. Exciton–Light Interaction in Three-Dimensional Microcavities (pages 11–16)

      L.C. Andreani, G. Panzarini and J.-M. Gérard

      Version of Record online: 18 JAN 2001 | DOI: 10.1002/1521-396X(200101)183:1<11::AID-PSSA11>3.0.CO;2-0

    3. Photonic Band Gap Microcavities in Nitrides (pages 17–22)

      M. Le Vassor d'Yerville, D. Cassagne and C. Jouanin

      Version of Record online: 18 JAN 2001 | DOI: 10.1002/1521-396X(200101)183:1<17::AID-PSSA17>3.0.CO;2-1

    4. Drift and Diffusion of Exciton–Polaritons in a Graded Quantum Microcavity (pages 23–27)

      B. Sermage, G. Malpuech, A.V. Kavokin and V. Thierry-Mieg

      Version of Record online: 18 JAN 2001 | DOI: 10.1002/1521-396X(200101)183:1<23::AID-PSSA23>3.0.CO;2-N

    5. Evidence of Polariton Stimulation in Semiconductor Microcavities (pages 29–33)

      F. Bæuf, R. André, R. Romestain, Le Si Dang, E. Péronne, J.F. Lampin, D. Hulin and A. Alexandrou

      Version of Record online: 18 JAN 2001 | DOI: 10.1002/1521-396X(200101)183:1<29::AID-PSSA29>3.0.CO;2-O

    6. Dielectric Microcavity in GaN/Si (pages 35–39)

      J.-Y. Duboz, L. Dua, G. Glastre, P. Legagneux, J. Massies, F. Semond and N. Grandjean

      Version of Record online: 18 JAN 2001 | DOI: 10.1002/1521-396X(200101)183:1<35::AID-PSSA35>3.0.CO;2-9

    7. Radiative and Nonradiative Recombination Processes in GaN-Based Semiconductors (pages 41–50)

      Y. Kawakami, K. Omae, A. Kaneta, K. Okamoto, T. Izumi, S. Sajou, K. Inoue, Y. Narukawa, T. Mukai and Sg. Fujita

      Version of Record online: 18 JAN 2001 | DOI: 10.1002/1521-396X(200101)183:1<41::AID-PSSA41>3.0.CO;2-V

    8. Absorption Spectroscopy and Band Structure in Polarized GaN/AlxGa1—xN Quantum Wells (pages 51–60)

      C. Wetzel, M. Kasumi, H. Amano and I. Akasaki

      Version of Record online: 18 JAN 2001 | DOI: 10.1002/1521-396X(200101)183:1<51::AID-PSSA51>3.0.CO;2-T

    9. Reduction of Carrier In-Plane Mobility in Group-III Nitride Based Quantum Wells: The Role of Internal Electric Fields (pages 61–66)

      M. Gallart, P. Lefebvre, A. Morel, T. Taliercio, B. Gil, J. Allègre, H. Mathieu, B. Damilano, N. Grandjean and J. Massies

      Version of Record online: 18 JAN 2001 | DOI: 10.1002/1521-396X(200101)183:1<61::AID-PSSA61>3.0.CO;2-R

    10. Optical Properties of Cubic Gallium Nitride on SiC/Si Pseudo-Substrates (pages 67–73)

      C. Bru-Chevallier, S. Fanget, A. Philippe, C. Dubois, E. Martinez-Guerrero, B. Daudin, P. Aboughé Nzé and Y. Monteil

      Version of Record online: 18 JAN 2001 | DOI: 10.1002/1521-396X(200101)183:1<67::AID-PSSA67>3.0.CO;2-S

    11. Propagation of Exciton–Polaritons in Nitride-Based Multiple Quantum Wells (pages 75–80)

      G. Malpuech and A. Kavokin

      Version of Record online: 18 JAN 2001 | DOI: 10.1002/1521-396X(200101)183:1<75::AID-PSSA75>3.0.CO;2-1

    12. Tuning Optical Properties of GaN-Based Nanostructures by Charge Screening (pages 81–85)

      A. Di Carlo

      Version of Record online: 18 JAN 2001 | DOI: 10.1002/1521-396X(200101)183:1<81::AID-PSSA81>3.0.CO;2-N

    13. Exciton/Free-Carrier Plasma in GaN-Based Quantum Wells: Scattering and Screening (pages 87–90)

      M.E. Portnoi and I. Galbraith

      Version of Record online: 18 JAN 2001 | DOI: 10.1002/1521-396X(200101)183:1<87::AID-PSSA87>3.0.CO;2-O

    14. Impact of Internal Electric Field and Localization Effect on Quantum Well Excitons in AlGaN/GaN/InGaN Light Emitting Diodes (pages 91–98)

      S.F. Chichibu, T. Sota, K. Wada, O. Brandt, K.H. Ploog, S.P. DenBaars and S. Nakamura

      Version of Record online: 18 JAN 2001 | DOI: 10.1002/1521-396X(200101)183:1<91::AID-PSSA91>3.0.CO;2-L

    15. Optical and Structural Properties of Quantum Dots in Wide-Bandgap Semiconductors (pages 99–104)

      M. Strassburg, A. Hoffmann, I.L. Krestnikov and N.N. Ledentsov

      Version of Record online: 18 JAN 2001 | DOI: 10.1002/1521-396X(200101)183:1<99::AID-PSSA99>3.0.CO;2-A

    16. Optical Properties and Lasing in (In, Al)GaN Structures (pages 105–109)

      S. Bidnyk, G.H. Gainer, S.K. Shee, J.B. Lam, B.D. Little, T. Sugahara, J. Krasinski, Y.H. Kwon, G.H. Park, S.J. Hwang, J.J. Song, G.E. Bulman and H.S. Kong

      Version of Record online: 18 JAN 2001 | DOI: 10.1002/1521-396X(200101)183:1<105::AID-PSSA105>3.0.CO;2-G

    17. Exciton Binding Energies and Oscillator Strengths in GaAsN–GaAs Quantum Wells (pages 111–116)

      B. Gil and P. Bigenwald

      Version of Record online: 18 JAN 2001 | DOI: 10.1002/1521-396X(200101)183:1<111::AID-PSSA111>3.0.CO;2-S

    18. A Mystery Wrapped in an Enigma: Optical Properties of InGaN Alloys (pages 117–120)

      K.P. O'Donnell

      Version of Record online: 18 JAN 2001 | DOI: 10.1002/1521-396X(200101)183:1<117::AID-PSSA117>3.0.CO;2-4

    19. Optical and Electronic Properties of GaN Based Heterostructures: A Self-Consistent Time-Dependent Approach (pages 121–124)

      A. Reale, A. Di Carlo, P. Lugli and A. Kavokin

      Version of Record online: 18 JAN 2001 | DOI: 10.1002/1521-396X(200101)183:1<121::AID-PSSA121>3.0.CO;2-O

    20. Temperature Induced Enhancement of the Exciton Binding Energy in Nitride Quantum Structures (pages 125–128)

      P. Bigenwald, B. Gil, A. Kavokin and P. Christol

      Version of Record online: 18 JAN 2001 | DOI: 10.1002/1521-396X(200101)183:1<125::AID-PSSA125>3.0.CO;2-8

    21. Phonon Replica Dynamics in High Quality GaN Epilayers and AlGaN/GaN Quantum Wells (pages 129–134)

      D. Alderighi, A. Vinattieri, F. Bogani, M. Colocci, S. Gottardo, N. Grandjean and J. Massies

      Version of Record online: 18 JAN 2001 | DOI: 10.1002/1521-396X(200101)183:1<129::AID-PSSA129>3.0.CO;2-T

    22. First Observations of 2D Photonic Crystal Band Structure in GaN–Sapphire Epitaxial Material (pages 135–138)

      D. Coquillat, A. Ribayrol, R.M. De La Rue, M. Le Vassor d'Yerville, D. Cassagne and C. Jouanin

      Version of Record online: 18 JAN 2001 | DOI: 10.1002/1521-396X(200101)183:1<135::AID-PSSA135>3.0.CO;2-4

    23. Absorption and Emission of (In,Ga)N/GaN Quantum Wells Grown by Molecular Beam Epitaxy (pages 139–143)

      L. Siozade, P. Disseix, A. Vasson, J. Leymarie, B. Damilano, N. Grandjean and J. Massies

      Version of Record online: 18 JAN 2001 | DOI: 10.1002/1521-396X(200101)183:1<139::AID-PSSA139>3.0.CO;2-P

    24. Buried Dielectric Mirrors for the Lateral Overgrowth of GaN-Based Microcavities (pages 145–149)

      R.W. Martin, P.R. Edwards, R. Pecharroman-Gallego, C. Trager-Cowan, T. Kim, H-S. Kim, K-S. Kim, I.M. Watson, M.D. Dawson, T.F. Krauss, J.H. Marsh and R.M. De La Rue

      Version of Record online: 18 JAN 2001 | DOI: 10.1002/1521-396X(200101)183:1<145::AID-PSSA145>3.0.CO;2-0

    25. Time-Resolved Photoluminescence in Strained GaN Layers (pages 151–155)

      G. Pozina, N.V. Edwards, J.P. Bergman, B. Monemar, M.D. Bremser and R.F. Davis

      Version of Record online: 18 JAN 2001 | DOI: 10.1002/1521-396X(200101)183:1<151::AID-PSSA151>3.0.CO;2-C

    26. Inelastic Light Scattering by Phonons in Hexagonal GaN–AlN Nanostructures (pages 157–161)

      J. Gleize, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, B. Daudin and N. Grandjean

      Version of Record online: 18 JAN 2001 | DOI: 10.1002/1521-396X(200101)183:1<157::AID-PSSA157>3.0.CO;2-P

    27. Growth by Molecular Beam Epitaxy and Optical Properties of a Ten-Period AlGaN/AlN Distributed Bragg Reflector on (111)Si (pages 163–167)

      F. Semond, N. Antoine-Vincent, N. Schnell, G. Malpuech, M. Leroux, J. Massies, P. Disseix, J. Leymarie and A. Vasson

      Version of Record online: 18 JAN 2001 | DOI: 10.1002/1521-396X(200101)183:1<163::AID-PSSA163>3.0.CO;2-0

    28. Investigation of Low-Resistance Metal Contacts on p-Type GaN Using the Linear and Circular Transmission Line Method (pages 169–175)

      A. Weimar, A. Lell, G. Brüderl, S. Bader and V. Härle

      Version of Record online: 18 JAN 2001 | DOI: 10.1002/1521-396X(200101)183:1<169::AID-PSSA169>3.0.CO;2-D

    29. Photon Recycling White Light Emitting Diode Based on InGaN Multiple Quantum Well Heterostructure (pages 177–182)

      V.V. Nikolaev, M.E. Portnoi and I. Eliashevich

      Version of Record online: 18 JAN 2001 | DOI: 10.1002/1521-396X(200101)183:1<177::AID-PSSA177>3.0.CO;2-H

    30. Optical Eigenmodes of a Spherical Microcavity (pages 183–187)

      R.A. Abram, S. Brand, M.A. Kaliteevski and V.V. Nikolaev

      Version of Record online: 18 JAN 2001 | DOI: 10.1002/1521-396X(200101)183:1<183::AID-PSSA183>3.0.CO;2-T

    31. Study of MBE-Grown GaN/AlGaN Quantum Well Structures by Two Wavelength Excited Photoluminescence (pages 189–195)

      J.M. Zanardi Ocampo, H. Klausing, O. Semchinova, J. Stemmer, M. Hirasawa, N. Kamata and K. Yamada

      Version of Record online: 18 JAN 2001 | DOI: 10.1002/1521-396X(200101)183:1<189::AID-PSSA189>3.0.CO;2-5

    32. Defect Reduction in HVPE Growth of GaN and Related Optical Spectra (pages 197–203)

      T. Paskova, P.P. Paskov, V. Darakchieva, S. Tungasmita, J. Birch and B. Monemar

      Version of Record online: 18 JAN 2001 | DOI: 10.1002/1521-396X(200101)183:1<197::AID-PSSA197>3.0.CO;2-9

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