physica status solidi (a)

Cover image for physica status solidi (a)

December 2001

Volume 188, Issue 2

Pages R1–R2, 477–903

Currently known as: physica status solidi (a)

    1. Direct Growth of Amorphous Silicon Oxide Nanowires and Crystalline Silicon Nanowires from Silicon Wafer (pages R1–R2)

      S. Jin, Q. Li and C.S. Lee

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<R1::AID-PSSA99991>3.0.CO;2-W

    2. New Iodide Method for Growth of GaN (pages 477–480)

      M. Suscavage, L. Bouthillette, D. Bliss, Sheng Qi Wang and Changmo Sung

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<477::AID-PSSA477>3.0.CO;2-W

    3. Observation of Dark Spots and Dark Lines of GaN Microcrystals Grown by Nitridation of Gallium Sulfide (pages 481–484)

      H. Kanie, K. Sugimoto and H. Okado

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<481::AID-PSSA481>3.0.CO;2-F

    4. GaN Growth on Novel Lattice-Matching Substrate: Tilted M-Plane Sapphire (pages 485–489)

      T. Matsuoka and E. Hagiwara

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<485::AID-PSSA485>3.0.CO;2-#

    5. Recent Advances in III-Nitride Devices Grown on Lithium Gallate (pages 491–495)

      W.A. Doolittle, A.S. Brown, S. Kang, S.W. Seo, S. Huang and N.M. Jokerst

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<491::AID-PSSA491>3.0.CO;2-B

    6. Crystal Growth of GaN on (Mn,Zn)Fe2O4 Substrates (pages 497–500)

      J. Ohta, H. Fujioka, H. Takahashi and M. Oshima

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<497::AID-PSSA497>3.0.CO;2-O

    7. Molecular Beam Epitaxy of Group-III Nitrides on Silicon Substrates: Growth, Properties and Device Applications (pages 501–510)

      F. Semond, Y. Cordier, N. Grandjean, F. Natali, B. Damilano, S. Vézian and J. Massies

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<501::AID-PSSA501>3.0.CO;2-6

    8. Micro-Raman Study of Wurtzite AlN Layers Grown on Si(111) (pages 511–514)

      J. Gleize, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, F. Semond and J. Massies

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<511::AID-PSSA511>3.0.CO;2-2

    9. Investigation of Different Si(111) Surface Preparation Methods for the Heteroepitaxy of GaN by Plasma-Assisted MBE (pages 515–518)

      M. Androulidaki, A. Georgakilas, F. Peiro, K. Amimer, M. Zervos, K. Tsagaraki, M. Dimakis and A. Cornet

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<515::AID-PSSA515>3.0.CO;2-N

    10. Potentialities of GaN-Based Microcavities Grown on Silicon Substrates (pages 519–522)

      N. Antoine-Vincent, F. Natali, F. Semond, M. Leroux, N. Grandjean, J. Massies, J. Leymarie and A. Vasson

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<519::AID-PSSA519>3.0.CO;2-7

    11. High Quality GaN Layers on Si(111) Substrates: AlN Buffer Layer Optimisation and Insertion of a SiN Intermediate Layer (pages 523–526)

      P.R. Hageman, S. Haffouz, V. Kirilyuk, A. Grzegorczyk and P.K. Larsen

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<523::AID-PSSA523>3.0.CO;2-R

    12. Growth and Characterization of GaN Epilayers on Chemically Etched Surface of 3C-SiC Intermediate Layer Grown on Si(111) Substrate (pages 527–530)

      J.H. Kang, M.K. Kwon, J.I. Rho, J.W. Yang, K.Y. Lim and K.S. Nahm

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<527::AID-PSSA527>3.0.CO;2-B

    13. Crack-Free Thick GaN Layers on Silicon (111) by Metalorganic Vapor Phase Epitaxy (pages 531–535)

      E. Feltin , B. Beaumont, M. Laügt, P. de Mierry, P. Vennéguès, M. Leroux and P. Gibart

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<531::AID-PSSA531>3.0.CO;2-V

    14. Acoustical and Optical Gallium Nitride Waveguides Grown on Si(111) by Metalorganic Vapor Phase Epitaxy (pages 537–541)

      H.P.D. Schenk, E. Feltin, M. Vaille, P. Gibart, R. Kunze, H. Schmidt, M. Weihnacht and E. Doghèche

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<537::AID-PSSA537>3.0.CO;2-7

    15. Growth Mechanism of Hexagonal GaN on AlAs-Pregrown GaAs(001) and {11n} Substrates (pages 543–547)

      M. Funato, Sz. Fujita, S. Yamamoto, K. Kaisei, K. Shimogami and Sg. Fujita

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<543::AID-PSSA543>3.0.CO;2-J

    16. Comparison of GaN Buffer Layers Grown on GaAs (111)A and (111)B Surfaces (pages 549–552)

      Y. Kumagai, H. Murakami, H. Seki and A. Koukitu

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<549::AID-PSSA549>3.0.CO;2-W

    17. Ab initio Calculations of GaN Initial Growth Processes on GaAs(111)A and GaAs(111)B Surfaces (pages 553–556)

      Y. Matsuo, Y. Kumagai, T. Irisawa and A. Koukitu

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<553::AID-PSSA553>3.0.CO;2-F

    18. Transmission Electron Microscope Analysis of Microstructures in GaN Grown on (111)A and (111)B of GaAs by Metalorganic Hydrogen Chloride Vapor-Phase Epitaxy (pages 557–560)

      T. Mitate, Y. Sonoda, K. Oki, N. Kuwano, Y. Kumagai, H. Murakami and A. Koukitu

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<557::AID-PSSA557>3.0.CO;2-#

    19. The Chemistry of Sapphire Nitridation in Relation to the GaN Structural Quality: Why Low Temperature 200 °C Nitridation? (pages 561–565)

      M. Losurdo, P. Capezzuto, G. Bruno, G. Namkoong, W.A. Doolittle and A.S. Brown

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<561::AID-PSSA561>3.0.CO;2-J

    20. Effects of the Sapphire Nitridation on the Polarity and Structural Properties of GaN Layers Grown by Plasma-Assisted MBE (pages 567–570)

      A. Georgakilas, S. Mikroulis, V. Cimalla, M. Zervos, A. Kostopoulos, Ph. Komninou, Th. Kehagias and Th. Karakostas

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<567::AID-PSSA567>3.0.CO;2-W

    21. Polarity of GaN Grown on Sapphire by Molecular Beam Epitaxy with Different Buffer Layers (pages 571–574)

      D. Huang, P. Visconti, M.A. Reshchikov, F. Yun, T. King, A.A. Baski, C.W. Litton, J. Jasinski, Z. Liliental-Weber and H. Morkoç

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<571::AID-PSSA571>3.0.CO;2-F

    22. Molecular-Beam Epitaxy of GaN: A Phase Diagram (pages 575–578)

      C. Adelmann, J. Brault, E. Martinez-Guerrero, G. Mula, H. Mariette, Le Si Dang and B. Daudin

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<575::AID-PSSA575>3.0.CO;2-#

    23. First-Principle Theoretical Study on Epitaxial Crystal Growth of GaN (pages 579–582)

      S. Murata, M. Ikenaga, K. Nakamura, A. Tachibana and K. Matsumoto

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<579::AID-PSSA579>3.0.CO;2-K

    24. Suppression of Spiral Growth in Molecular Beam Epitaxy of GaN on Vicinal 6H-SiC(0001) (pages 583–586)

      Y. Cui and L. Li

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<583::AID-PSSA583>3.0.CO;2-3

    25. GaN Growth by Compound Source MBE Using GaN Powder (pages 587–590)

      T. Honda, K. Sato, T. Hashimoto, M. Shinohara and H. Kawanishi

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<587::AID-PSSA587>3.0.CO;2-O

    26. Near Bandedge Cathodoluminescence Studies of AlN Films: Dependence on MBE Growth Conditions (pages 591–594)

      Y. Shishkin, R.P. Devaty, W.J. Choyke, F. Yun, T. King and H. Morkoç

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<591::AID-PSSA591>3.0.CO;2-7

    27. Growth of GaN on SiC(0001) by Molecular Beam Epitaxy (pages 595–599)

      C.D. Lee, Ashutosh Sagar, R.M. Feenstra, W.L. Sarney, L. Salamanca-Riba and J.W.P. Hsu

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<595::AID-PSSA595>3.0.CO;2-S

    28. Strong Photoluminescence Emission from Polycrystalline GaN Grown on Metal Substrate by NH3 Source MBE (pages 601–604)

      H. Asahi, H. Tampo, K. Yamada, K. Ohnishi, Y. Imanishi and K. Asami

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<601::AID-PSSA601>3.0.CO;2-2

    29. Ammonia Source MBE Growth of Polycrystalline GaN p–n Junction (pages 605–609)

      H. Tampo, K. Yamada, K. Ohnishi, Y. Imanishi, K. Asami and H. Asahi

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<605::AID-PSSA605>3.0.CO;2-N

    30. Surface Segregation in Group-III Nitride MBE (pages 611–614)

      S.Yu. Karpov and Yu.N. Makarov

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<611::AID-PSSA611>3.0.CO;2-Z

    31. Optical Control of Group-III and N Flux Intensities in Plasma-Assisted MBE with RF Capacitively-Coupled Magnetron Nitrogen Activator (pages 615–619)

      V.N. Jmerik, V.A. Vekshin, V.Yu. Davydov, V.V. Ratnikov, M.G. Tkachman, T.V. Shubina and S.V. Ivanov

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<615::AID-PSSA615>3.0.CO;2-J

    32. Growth of GaN Layers by One-, Two-, and Three-Flow Metalorganic Vapor Phase Epitaxy (pages 621–624)

      K. Ohkawa, A. Hirako and M. Yoshitani

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<621::AID-PSSA621>3.0.CO;2-V

    33. A New “Three-Step Method” for High Quality MOVPE Growth of III-Nitrides on Sapphire (pages 625–628)

      A. Yoshikawa and K. Takahashi

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<625::AID-PSSA625>3.0.CO;2-F

    34. An Oxygen Doped Nucleation Layer for the Growth of High Optical Quality GaN on Sapphire (pages 629–633)

      B. Kuhn and F. Scholz

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<629::AID-PSSA629>3.0.CO;2-#

    35. Gas-Phase and Surface Reactions in a Horizontal Reactor for GaN MOVPE Growth (pages 635–639)

      K. Harafuji

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<635::AID-PSSA635>3.0.CO;2-B

    36. The Influence of Buffer Layer Growth Parameters on the Microstructure and Surface Morphology of GaN on Sapphire Substrates Correlated with in-situ Reflectivity (pages 641–645)

      D.A. Wood, P.J. Parbrook, R.J. Lynch, M. Lada and A.G. Cullis

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<641::AID-PSSA641>3.0.CO;2-N

    37. The Influence of Nucleation Parameters on GaN Buffer Layer Properties Used for HEMT Application (pages 647–651)

      N. Nastase, H. Hardtdegen, R. Schmidt, H. Bay, H. Lüth, A. Alam and M. Heuken

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<647::AID-PSSA647>3.0.CO;2-#

    38. Influences of Initial Nitridation Process on the Optical and Structural Characterization of GaN Layer Grown on Sapphire (0001) by Metalorganic Chemical Vapor Deposition (pages 653–657)

      X.L. Sun, Hui Yang, J.J. Zhu, Y.T. Wang, Y. Chen, G.H. Li and Z.G. Wang

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<653::AID-PSSA653>3.0.CO;2-B

    39. Improvement of the Optical and Structural Properties of MOCVD Grown GaN on Sapphire by an in-situ SiN Treatment (pages 659–662)

      P.R. Hageman, S. Haffouz, V. Kirilyuk, L. Macht, J.L. Weyher, A. Grzegorczyk and P.K. Larsen

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<659::AID-PSSA659>3.0.CO;2-O

    40. The Growth of GaN Using Plasma Assisted Metalorganic Vapour Phase Epitaxy (pages 663–666)

      R.P. Campion, T. Li, C.T. Foxon and I. Harrison

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<663::AID-PSSA663>3.0.CO;2-7

    41. UV Moderation of Nitride Films during Remote Plasma Enhanced Chemical Vapour Deposition (pages 667–671)

      K.S.A. Butcher, Afifuddin, P.P.-T. Chen, E.M. Goldys and T.L. Tansley

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<667::AID-PSSA667>3.0.CO;2-S

    42. Atomic Layer Epitaxy of Hexagonal and Cubic GaN Nanostructures (pages 673–676)

      C. Adelmann, E. Martinez-Guerrero, J. Barjon, J. Brault, Le Si Dang, H. Mariette, G. Mula and B. Daudin

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<673::AID-PSSA673>3.0.CO;2-3

    43. Structural Control of Cubic and Hexagonal GaN by Changing the Electric Bias during ECR-MBE Growth (pages 677–680)

      T. Araki, T. Minami, M. Kijima and Y. Nanishi

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<677::AID-PSSA677>3.0.CO;2-O

    44. Defect States in Cubic GaN Epilayer Grown on GaAs by Metalorganic Vapor Phase Epitaxy (pages 681–685)

      S.J. Xu, C.T. Or, Q. Li, L.X. Zheng, M.H. Xie, S.Y. Tong and Hui Yang

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<681::AID-PSSA681>3.0.CO;2-7

    45. A New Approach to the Growth of Cubic GaN Films Using an AlN/GaN Ordered Alloy as a Buffer Layer (pages 687–689)

      R. Kimura, J. Shike, A. Shigemori, K. Ishida and K. Takahashi

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<687::AID-PSSA687>3.0.CO;2-K

    46. Suppression of Hexagonal GaN in Cubic GaN Growth by In Surfactant Effect Combined with the Precise Control of V/III Ratio (pages 691–694)

      A. Hashimoto, H. Mori, Y. Nishio, T. Li, C.T. Foxon and A. Yamamoto

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<691::AID-PSSA691>3.0.CO;2-3

    47. Optical Characterization of MBE Grown Zinc-Blende AlGaN (pages 695–698)

      E. Martinez-Guerrero, F. Enjalbert, J. Barjon, E. Bellet-Almaric, B. Daudin, G. Ferro, D. Jalabert, Le Si Dang, H. Mariette, Y. Monteil and G. Mula

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<695::AID-PSSA695>3.0.CO;2-O

    48. p-Type Doping of Cubic GaN by Carbon (pages 699–703)

      D.J. As, U. Köhler, M. Lübbers, J. Mimkes and K. Lischka

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<699::AID-PSSA699>3.0.CO;2-8

    49. Optical Properties of Cubic InGaN/GaN Multiple Quantum Wells on 3C-SiC Substrates by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy (pages 705–709)

      T. Kitamura, Y. Suzuki, Y. Ishida, X.Q. Shen, H. Nakanishi, S.F. Chichibu, M. Shimizu and H. Okumura

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<705::AID-PSSA705>3.0.CO;2-J

    50. Modified Stranski-Krastanov Growth in Stacked Layers of Self-Assembled Cubic GaN/AlN Quantum Dots (pages 711–714)

      E. Martinez-Guerrero, R. Beneyton, C. Adelmann, B. Daudin, Le Si Dang, G. Mula and H. Mariette

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<711::AID-PSSA711>3.0.CO;2-V

    51. Selective Area Growth of GaN on SiC Substrate by Ammonia-Source MBE (pages 715–718)

      H. Tang, J.A. Bardwell, J.B. Webb, S. Rolfe, S. Moisa, J. Fraser, S. Raymond and P. Sikora

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<715::AID-PSSA715>3.0.CO;2-F

    52. Selective Area Growth of GaN and Fabrication of GaN/AlGaN Quantum Wells on Grown Facets (pages 719–723)

      C. Setiagung, J. Wu, K. Onabe and Y. Shiraki

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<719::AID-PSSA719>3.0.CO;2-#

    53. Fabrication and Optical Characterization of Facet-Controlled ELO (FACELO) GaN by LP-MOVPE (pages 725–728)

      H. Miyake, M. Narukawa, K. Hiramatsu, H. Naoi, Y. Iyechika and T. Maeda

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<725::AID-PSSA725>3.0.CO;2-B

    54. Strain and Dislocation Reduction in Maskless Pendeo-Epitaxy GaN Thin Films (pages 729–732)

      A.M. Roskowski, P.Q. Miraglia, E.A. Preble, S. Einfeldt, T. Stiles, R.F. Davis, J. Schuck, R. Grober and U. Schwarz

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<729::AID-PSSA729>3.0.CO;2-W

    55. Epitaxial Lateral Overgrowth of GaN on Silicon (111) (pages 733–737)

      E. Feltin, B. Beaumont, P. Vennéguès, T. Riemann, J. Christen, J.P. Faurie and P. Gibart

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<733::AID-PSSA733>3.0.CO;2-F

    56. Formation of Horizontal Dislocations in Epitaxially Lateral Overgrown (ELO) GaN (pages 739–742)

      S. Nishimoto, K. Horibuchi, K. Oki, N. Kuwano, H. Miyake and K. Hiramatsu

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<739::AID-PSSA739>3.0.CO;2-S

    57. In situ and ex situ Evaluation of Mechanisms of Lateral Epitaxial Overgrowth (pages 743–746)

      I.M. Watson, C. Liu, K.-S. Kim, H.-S. Kim, C.J. Deatcher, J.M. Girkin, M.D. Dawson, P.R. Edwards, C. Trager-Cowan and R.W. Martin

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<743::AID-PSSA743>3.0.CO;2-B

    58. Stress at the Coalescence Boundary of Epitaxial Lateral Overgrown GaN (pages 747–750)

      M. Kuball, M. Benyoucef, B. Beaumont and P. Gibart

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<747::AID-PSSA747>3.0.CO;2-W

    59. Three-Dimensional Imaging of ELOG Growth Domains by Scanning Cathodoluminescence Tomography (pages 751–755)

      T. Riemann, J. Christen, A. Kaschner, A. Hoffmann, C. Thomsen, M. Seyboth, F. Habel, R. Beccard and M. Heuken

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<751::AID-PSSA751>3.0.CO;2-F

    60. Initial Nucleation Study and New Technique for Sublimation Growth of AlN on SiC Substrate (pages 757–762)

      Y. Shi, B. Liu, L. Liu, J.H. Edgar, H.M. Meyer III, E.A. Payzant, L.R. Walker, N.D. Evans, J.G. Swadener, J. Chaudhuri and Joy Chaudhuri

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<757::AID-PSSA757>3.0.CO;2-S

    61. Effect of Reactive Ambient on AlN Sublimation Growth (pages 763–767)

      S.Yu. Karpov, A.V. Kulik, A.S. Segal, M.S. Ramm and Yu.N. Makarov

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<763::AID-PSSA763>3.0.CO;2-3

    62. Characterization of Aluminum Nitride Crystals Grown by Sublimation (pages 769–774)

      L. Liu, D. Zhuang, B. Liu, Y. Shi, J.H. Edgar, S. Rajasingam and M. Kuball

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<769::AID-PSSA769>3.0.CO;2-G

    63. Indium Surfactant Assisted Growth of AlN/GaN Heterostructures by Metal-Organic Chemical Vapor Deposition (pages 775–778)

      S. Keller, S. Heikman, I. Ben-yaacov, L. Shen, S.P. DenBaars and U.K. Mishra

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<775::AID-PSSA775>3.0.CO;2-S

    64. Spontaneous Ridge Formation and Its Effect on Field Emission of Heavily Si-Doped AlN (pages 779–782)

      M. Kasu and N. Kobayashi

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<779::AID-PSSA779>3.0.CO;2-C

    65. Growth of AIN on Etched 6H-SiC(0001) Substrates via MOCVD (pages 783–787)

      W. Hageman, Z. Xie, J. Edgar, D. Zhuang, S. Jagganathan, J. Chaudhuri, A. Rys and J. Schmitt

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<783::AID-PSSA783>3.0.CO;2-W

    66. Determination of Band-Gap Bowing for AlxGa1–xN Alloys (pages 789–792)

      O. Katz, B. Meyler, U. Tisch and J. Salzman

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<789::AID-PSSA789>3.0.CO;2-8

    67. Measurement of AlxGa1-xN Refractive Indices (pages 793–797)

      G. Webb-Wood, Ü. Özgür, H.O. Everitt, F. Yun and H. Morkoç

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<793::AID-PSSA793>3.0.CO;2-S

    68. Growth Mechanism and Characterization of Low-Dislocation-Density AlGaN Single Crystals Grown on Periodically Grooved Substrates (pages 799–802)

      T. Detchprohm, S. Sano, S. Mochizuki, S. Kamiyama, H. Amano and I. Akasaki

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<799::AID-PSSA799>3.0.CO;2-4

    69. Surface Morphology of AlxGa1–xN Films Grown by MOCVD (pages 803–806)

      L. Geng, F.A. Ponce, S. Tanaka, H. Omiya and Y. Nakagawa

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<803::AID-PSSA803>3.0.CO;2-N

    70. Time-Resolved Reflectivity Studies of Carrier Dynamics as a Function of Al Content in AlGaN Alloys (pages 807–810)

      M. Wraback, F. Semendy, H. Shen, U. Chowdhury, D.J.H. Lambert, M.M. Wong and R.D. Dupuis

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<807::AID-PSSA807>3.0.CO;2-7

    71. Observations of Segregation of Al in AlGaN Alloys (pages 811–814)

      L. Chang, S.K. Lai, F.R. Chen and J.J. Kai

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<811::AID-PSSA811>3.0.CO;2-R

    72. Temperature Dependence of Transmission and Emission Spectra in MOCVD-Grown AlGaN Ternary Alloys (pages 815–819)

      Yong-Hoon Cho, G.H. Gainer, J.B. Lam, J.J. Song and W. Yang

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<815::AID-PSSA815>3.0.CO;2-B

    73. Determination of Alloy Composition and Residual Stress for AlxGa1–xN/GaN Epitaxial Films (pages 821–824)

      Q. Paduano, D. Weyburne and S-Q. Wang

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<821::AID-PSSA821>3.0.CO;2-N

    74. Growth and Characterization of GaN/AlGaN Superlattices for Near-Infrared Intersubband Transitions (pages 825–831)

      H.M. Ng, C. Gmachl, T. Siegrist, S.N.G. Chu and A.Y. Cho

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<825::AID-PSSA825>3.0.CO;2-7

    75. Mapping the Internal Potential across GaN/AlGaN Heterostructures by Electron Holography (pages 833–837)

      J. Cai, F.A. Ponce, S. Tanaka, H. Omiya and Y. Nakagawa

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<833::AID-PSSA833>3.0.CO;2-B

    76. Large Built-in Electric Field and Its Influence on the Pressure Behavior of the Light Emission from GaN/AlGaN Strained Quantum Wells (pages 839–843)

      P. Perlin, T. Suski, S.P. Łepkowski, H. Teisseyre, N. Grandjean and J. Massies

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<839::AID-PSSA839>3.0.CO;2-O

    77. Photoconductivity Studies of Al0.18Ga0.82N/GaN Single Heterostructure (pages 845–850)

      M. Niehus, R. Schwarz, S. Koynov, P. Sanguino, M. Heuken and B.K. Meyer

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<845::AID-PSSA845>3.0.CO;2-#

    78. Recombination Dynamics in GaN/AlGaN Quantum Wells: The Role of Built-in Fields (pages 851–855)

      D. Alderighi, A. Vinattieri, J. Kudrna, M. Colocci, A. Reale, G. Kokolakis, A. Di Carlo, P. Lugli, F. Semond, N. Grandjean and J. Massies

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<851::AID-PSSA851>3.0.CO;2-B

    79. Effect of Well Thickness on GaN/AlGaN Separate Confinement Heterostructure Emission (pages 857–861)

      G. Gainer, Y. Kwon, J. Lam, S. Bidnyk, A. Kalashyan, J. Song, S. Choi and G. Yang

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<857::AID-PSSA857>3.0.CO;2-O

    80. Optic and Acoustic Phonons in Strained Hexagonal GaN/AlGaN Multilayer Structures (pages 863–866)

      V.Yu. Davydov, A.A. Klochikhin, I.E. Kozin, V.V. Emtsev, I.N. Goncharuk, A.N. Smirnov, R.N. Kyutt, M.P. Scheglov, A.V. Sakharov, W.V. Lundin, E.E. Zavarin and A.S. Usikov

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<863::AID-PSSA863>3.0.CO;2-#

    81. Residual Doping Effects on the Amplitude of Polarization-Induced Electric Fields in GaN/AlGaN Quantum Wells (pages 867–870)

      J. Simon, R. Langer, A. Barski, M. Zervos and N.T. Pelekanos

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<867::AID-PSSA867>3.0.CO;2-K

    82. Optical Characterisation of AlGaN Epitaxial Layers and GaN/AlGaN Quantum Wells (pages 871–875)

      S.T. Pendlebury, P. Lynam, D.J. Mowbray, P.J. Parbrook, D.A. Wood, M. Lada, J.P. O'Neill, A.G. Cullis and M.S. Skolnick

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<871::AID-PSSA871>3.0.CO;2-3

    83. Structure Dependence of Electron Mobility in GaN/AlGaN Multiple Quantum Wells (pages 877–880)

      K. Hoshino, T. Someya and Y. Arakawa

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<877::AID-PSSA877>3.0.CO;2-G

    84. AlN/AlGaN Bragg Reflectors Grown by Gas Source Molecular Beam Epitaxy (pages 881–884)

      G. Kipshidze, V. Kuryatkov, K. Choi, Iu. Gherasoiu, B. Borisov, S. Nikishin, M. Holtz, D. Tsvetkov, V. Dmitriev and H. Temkin

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<881::AID-PSSA881>3.0.CO;2-#

    85. Growth and Characterization of AlGaN/GaN Superlattices (pages 885–888)

      W.V. Lundin, A.V. Sakharov, A.F. Tsatsulnikov, E.E. Zavarin, A.I. Besulkin, M.F. Kokorev, R.N. Kyutt, V.Yu. Davydov, V.V. Tretyakov, D.V. Pakhnin and A.S. Usikov

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<885::AID-PSSA885>3.0.CO;2-K

    86. Influence of Doping Profiles on p-type AlGaN/GaN Superlattices (pages 889–893)

      E. Waldron, J. Graff and E. Schubert

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<889::AID-PSSA889>3.0.CO;2-4

    87. Crystal Growth of High-Quality AlInN/GaN Superlattices and of Crack-Free AlN on GaN: Their Possibility of High Electron Mobility Transistor (pages 895–898)

      S. Yamaguchi, M. Kosaki, Y. Watanabe, S. Mochizuki, T. Nakamura, Y. Yukawa, S. Nitta, H. Amano and I. Akasaki

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<895::AID-PSSA895>3.0.CO;2-G

    88. Study of (Al,Ga)N Bragg Mirrors Grown on Al2O3(0001) and Si(111) by Metalorganic Vapor Phase Epitaxy (pages 899–903)

      H.P.D. Schenk, E. Feltin, P. Vennéguès, O. Tottereau, M. Laügt, M. Vaille, B. Beaumont, P. de Mierry, P. Gibart, S. Fernández and F. Calle

      Article first published online: 23 NOV 2001 | DOI: 10.1002/1521-396X(200112)188:2<899::AID-PSSA899>3.0.CO;2-0

SEARCH

SEARCH BY CITATION