physica status solidi (a)

Cover image for physica status solidi (a)

March 2002

Volume 190, Issue 1

Pages R1–R3, 1–299

Currently known as: physica status solidi (a)

    1. Influence of PbF2 Doping on Scintillation Properties of PbWO4 Single Crystals (pages R1–R3)

      Xiancai Liu, Guanqin Hu, Xiqi Feng, Yanlin Huang and Yanxing Zhang

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<R1::AID-PSSA99991>3.0.CO;2-G

    2. Biexcitonic Bound and Continuum States of Homogeneously and Inhomogeneously Broadened Exciton Resonances (page 1)

      W. Langbein and J.M. Hvam

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<1::AID-PSSA1>3.0.CO;2-X

    3. Preface: phys. stat. sol. (a) 190/1 (page 3)

      Aldo Di Carlo and Alexey Kavokin

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<3::AID-PSSA3>3.0.CO;2-P

    4. Rapid Delineation of Extended Defects in GaN and a Novel Method for Their Reduction (pages 5–14)

      P. Visconti, D. Huang, F. Yun, M.A. Reshchikov, T. King, R. Cingolani, J. Jasinski, Z. Liliental-Weber and H. Morkoç

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<5::AID-PSSA5>3.0.CO;2-H

    5. Phase Separation in Cubic Group-III Nitride Alloys (pages 15–22)

      L.M.R. Scolfaro

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<15::AID-PSSA15>3.0.CO;2-A

    6. Improved Molecular Beam Epitaxy for Fabricating AlGaN/GaN Heterojunction Devices (pages 23–31)

      K. Kishino and A. Kikuchi

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<23::AID-PSSA23>3.0.CO;2-K

    7. Spectroscopic Ellipsometry in-situ Monitoring/Control of GaN Epitaxial Growth in MBE and MOVPE (pages 33–41)

      A. Yoshikawa, K. Xu, Y. Taniyasu and K. Takahashi

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<33::AID-PSSA33>3.0.CO;2-I

    8. Plasmas for the Low-Temperature Growth of High-Quality GaN Films by Molecular Beam Epitaxy and Remote Plasma MOCVD (pages 43–51)

      M. Losurdo, P. Capezzuto, G. Bruno, G. Namkoong, W.A. Doolittle and A.S. Brown

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<43::AID-PSSA43>3.0.CO;2-G

    9. Thickness Influence on Optical and Morphological Properties of HVPE GaN Layers Grown on MOCVD GaN Layers (pages 53–58)

      A. Trassoudaine, L. Siozade, E. Aujol, R. Cadoret, D. Castelluci and A. Vasson

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<53::AID-PSSA53>3.0.CO;2-E

    10. Strain Evolution in High Temperature AlN Buffer Layers for HVPE-GaN Growth (pages 59–64)

      V. Darakchieva, J. Birch, P.P. Paskov, S. Tungasmita, T. Paskova and B. Monemar

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<59::AID-PSSA59>3.0.CO;2-F

    11. Nonlinear Behavior of Spontaneous and Piezoelectric Polarization in III–V Nitride Alloys (pages 65–73)

      F. Bernardini and V. Fiorentini

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<65::AID-PSSA65>3.0.CO;2-0

    12. Anisotropy of the Free Exciton Emission in GaN Grown on a-Plane Sapphire (pages 75–79)

      P. P. Paskov, T. Paskova, P. O. Holtz and B. Monemar

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<75::AID-PSSA75>3.0.CO;2-Z

    13. Dynamic Screening in AlGaN/GaN Multi Quantum Wells (pages 81–86)

      A. Reale, G. Massari, A. Di Carlo and P. Lugli

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<81::AID-PSSA81>3.0.CO;2-K

    14. Resonant and Non-Resonant Dynamics of Excitons and Free Carriers in GaN/AlGaN Quantum Wells (pages 87–92)

      A. Vinattieri, D. Alderighi, J. Kudrna, M. Colocci, A. Reale, A. Di Carlo, P. Lugli, F. Semond, N. Grandjean and J. Massies

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<87::AID-PSSA87>3.0.CO;2-L

    15. Nondegenerated Pump and Probe Spectroscopy in InGaN-Based Semiconductors (pages 93–98)

      K. Omae, Y. Kawakami, Y. Narukawa, Y. Watanabe, T. Mukai and Sg. Fujita

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<93::AID-PSSA93>3.0.CO;2-6

    16. The Excitonic Optical Stark Effect in GaN (pages 99–105)

      C. K. Choi, Yia-Chung Chang, J.B. Lam, G.H. Gainer, S. K. Shee, J. S. Krasinski and J.J. Song

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<99::AID-PSSA99>3.0.CO;2-7

    17. Optical Study of AlGaN/GaN Multiple Quantum Well Structures Grown on Laterally Overgrown GaN Templates (pages 107–111)

      G. Pozina, J.P. Bergman, B. Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<107::AID-PSSA107>3.0.CO;2-5

    18. Ionization Degree of Electron–Hole Plasma in GaN/AlGaN Quantum Wells (pages 113–119)

      V.V. Nikolaev and M.E. Portnoi

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<113::AID-PSSA113>3.0.CO;2-H

    19. Inter- and Intraband Transitions in Cubic Nitride Quantum Wells (pages 121–127)

      S.C.P. Rodrigues, G.M. Sipahi, L.M.R. Scolfaro, O.C. Noriega, J.R. Leite, T. Frey, D.J. As, D. Schikora and K. Lischka

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<121::AID-PSSA121>3.0.CO;2-L

    20. Exciton Oscillator Strength in GaN/AlGaN Quantum Wells (pages 129–133)

      M. Zamfirescu, B. Gil, N. Grandjean, G. Malpuech, A. Kavokin, P. Bigenwald and J. Massies

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<129::AID-PSSA129>3.0.CO;2-Q

    21. Optical Investigations and Absorption Coefficient Determination of InGaN/GaN Quantum Wells (pages 135–140)

      J. Kvietkova, L. Siozade, P. Disseix, A. Vasson, J. Leymarie, B. Damilano, N. Grandjean and J. Massies

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<135::AID-PSSA135>3.0.CO;2-1

    22. Monte Carlo Description of Exciton Dynamics in GaN (pages 141–147)

      F. Compagnone, G. Kokolakis, A. Di Carlo and P. Lugli

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<141::AID-PSSA141>3.0.CO;2-D

    23. The Effects of Localization and of Electric Fields on LO-Phonon–Exciton Coupling in InGaN/GaN Quantum Wells and Quantum Boxes (pages 149–154)

      S. Kalliakos, P. Lefebvre, X.B. Zhang, T. Taliercio, B. Gil, N. Grandjean, B. Damilano and J. Massies

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<149::AID-PSSA149>3.0.CO;2-I

    24. Steady-State and Time-Resolved Near-Field Optical Spectroscopy of GaN/AlN Quantum Dots and InGaN/GaN Quantum Wells (pages 155–160)

      J. Kudrna, P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, F. Semond, N. Grandjean and J. Massies

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<155::AID-PSSA155>3.0.CO;2-U

    25. Photoluminescence of Excitons in InxGa1—xN/InyGa1—yN Multiple Quantum Wells (pages 161–166)

      B. Monemar, P.P. Paskov, J.P. Bergman, G. Pozina, T. Paskova, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<161::AID-PSSA161>3.0.CO;2-5

    26. Biexcitonic Bound and Continuum States of Homogeneously and Inhomogeneously Broadened Exciton Resonances (pages 167–174)

      W. Langbein and J.M. Hvam

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<167::AID-PSSA167>3.0.CO;2-I

    27. Electron Acceleration by Light in Semiconductor Microcavities (pages 175–179)

      A. Kavokin, M. Zamfirescu, G. Malpuech and A. Di Carlo

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<175::AID-PSSA175>3.0.CO;2-M

    28. Polariton Lasing Due to the Exciton–Electron Scattering in Semiconductor Microcavities (pages 181–186)

      G. Malpuech, A. Kavokin, A. Di Carlo, J.J. Baumberg, F. Compagnone, P. Lugli and M. Zamfirescu

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<181::AID-PSSA181>3.0.CO;2-Y

    29. Modelling and Spectroscopy of GaN Microcavities (pages 187–192)

      N. Antoine-Vincent, F. Natali, P. Disseix, M. Mihailovic, A. Vasson, J. Leymarie, F. Semond, M. Leroux and J. Massies

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<187::AID-PSSA187>3.0.CO;2-A

    30. Optical Nonlinearities in a Microcavity with InGaN Quantum Wells: Self-Assembled Quantum Dots Approach (pages 193–198)

      V.V. Nikolaev and M.E. Portnoi

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<193::AID-PSSA193>3.0.CO;2-M

    31. Spontaneous Light Emission from a Spherical Microcavity with a Quantum Dot (pages 199–203)

      V.V. Nikolaev, M.A. Kaliteevski, D. Cassagne, J.-P. Albert and C.M. Sotomayor-Torres

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<199::AID-PSSA199>3.0.CO;2-Z

    32. Peculiarities of Exciton–Polaritons in GaN at Different Polarizations Studied by μ-Photoluminescence Spectroscopy (pages 205–211)

      T.V. Shubina, A.A. Toropov, S.V. Ivanov, J.P. Bergman, T. Paskova, P.O. Holtz and B. Monemar

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<205::AID-PSSA205>3.0.CO;2-9

    33. Polaron Effects in Quantum Dots (pages 213–219)

      O. Verzelen, R. Ferreira, G. Bastard, T. Inoshita and H. Sakaki

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<213::AID-PSSA213>3.0.CO;2-D

    34. Optical Manifestations of Electron Spin Transport and Relaxation in Semiconductors (pages 221–227)

      K.V. Kavokin

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<221::AID-PSSA221>3.0.CO;2-H

    35. Electron Spin Redistribution Due to Pauli Blocking in Quantum Dots and Quantum Wells (pages 229–233)

      V.K. Kalevich, M. Paillard, K.V. Kavokin, X. Marie, E. Vanelle, T. Amand, V.M. Ustinov and B.P. Zakharchenya

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<229::AID-PSSA229>3.0.CO;2-M

    36. Characteristics of Laser Diodes Composed of GaN-Based Semiconductor (pages 235–246)

      S. Nagahama, T. Yanamoto, M. Sano and T. Mukai

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<235::AID-PSSA235>3.0.CO;2-Y

    37. Monte Carlo Calculations of THz Generation in Nitrides (pages 247–256)

      L. Varani, J.C. Vaissière, E. Starikov, P. Shiktorov, V. Gružinskis, L. Reggiani and J.H. Zhao

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<247::AID-PSSA247>3.0.CO;2-M

    38. Schottky Barrier Height in GaN/Al Junctions: an ab-initio Study (pages 257–262)

      S. Picozzi, A. Continenza, S. Massidda and A.J. Freeman

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<257::AID-PSSA257>3.0.CO;2-I

    39. High Field Transport Studies of GaN (pages 263–270)

      J.M. Barker, R. Akis, T.J. Thornton, D.K. Ferry and S.M. Goodnick

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<263::AID-PSSA263>3.0.CO;2-U

    40. Monte Carlo Analysis of the Efficiency of Tera-Hertz Harmonic Generation in Semiconductor Nitrides (pages 271–279)

      P. Shiktorov, E. Starikov, V. Gružinskis, M. Zarcone, D. Persano Adorno, G. Ferrante, L. Reggiani, L. Varani and J.C. Vaissière

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<271::AID-PSSA271>3.0.CO;2-Y

    41. Thermoresistive and Piezoresistive Properties of Wurtzite N–GaN (pages 281–286)

      S. Mingiacchi, P. Lugli, A. Bonfiglio, G. Conte, M. Eickhoff, O. Ambacher, A. Rizzi, A. Passaseo, P. Visconti and R. Cingolani

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<281::AID-PSSA281>3.0.CO;2-U

    42. Terahertz Generation Due to Streaming Plasma Instability in n+–n–n–n+ InN Submicron Structure (pages 287–293)

      E. Starikov, V. Gružinskis and P. Shiktorov

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<287::AID-PSSA287>3.0.CO;2-6

    43. Modeling of GaN-Based Resonant Tunneling Diodes: Influence of Polarization Fields (pages 295–299)

      F. Sacconi, A. Di Carlo and P. Lugli

      Version of Record online: 26 MAR 2002 | DOI: 10.1002/1521-396X(200203)190:1<295::AID-PSSA295>3.0.CO;2-A

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