physica status solidi (a)

Cover image for physica status solidi (a)

July 2002

Volume 192, Issue 1

Pages R1–R6, 1–235

Currently known as: physica status solidi (a)

    1. Dislocation Structure in a Fatigued Cu–16at%Al Alloy Single Crystal Oriented for Double Slip (pages R1–R3)

      X.W. Li, X.M. Wu, Z.G. Wang and Y. Umakoshi

      Article first published online: 1 JUL 2002 | DOI: 10.1002/1521-396X(200207)192:1<R1::AID-PSSA99991>3.0.CO;2-Z

    2. Proceedings of the 4th International Symposium on Blue Lasers and Light Emitting Diodes (ISBLLED2002) (page 1)

      E. Calleja, E. Muñoz and K. Ploog

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200207)192:1<1::AID-PSSA1>3.0.CO;2-R

    3. Editors' Preface (page 3)

      Enrique Calleja, Elías Muñoz and Klaus Ploog

      Article first published online: 1 JUL 2002 | DOI: 10.1002/1521-396X(200207)192:1<3::AID-PSSA3>3.0.CO;2-J

    4. Impact of In Bulk and Surface Segregation on the Optical Properties of (In,Ga)N/GaN Multiple Quantum Wells (pages 5–13)

      O. Brandt, P. Waltereit, U. Jahn, S. Dhar and K.H. Ploog

      Article first published online: 25 JUN 2002 | DOI: 10.1002/1521-396X(200207)192:1<5::AID-PSSA5>3.0.CO;2-B

    5. Exciton Related Stimulated Emission in ZnO-Based Multiple-Quantum Wells (pages 14–20)

      Y. Segawa, H.D. Sun, T. Makino, M. Kawasaki and H. Koinuma

      Article first published online: 25 JUN 2002 | DOI: 10.1002/1521-396X(200207)192:1<14::AID-PSSA14>3.0.CO;2-A

    6. Influence of Depletion Fields on Photoluminescence of n-Doped InGaN/GaN Multiple Quantum Well Structures (pages 21–26)

      B. Monemar, P.P. Paskov, G. Pozina, J.P. Bergman, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki

      Article first published online: 25 JUN 2002 | DOI: 10.1002/1521-396X(200207)192:1<21::AID-PSSA21>3.0.CO;2-Q

    7. Observation of Intersubband Transition from the First to the Third Subband (e1–e3) in GaN/AlGaN Quantum Wells (pages 27–32)

      K. Hoshino, T. Someya, K. Hirakawa and Y. Arakawa

      Article first published online: 25 JUN 2002 | DOI: 10.1002/1521-396X(200207)192:1<27::AID-PSSA27>3.0.CO;2-R

    8. UV Photoluminescence from Size-Controlled GaN Quantum Dots Grown by MOCVD (pages 33–38)

      M. Miyamura, K. Tachibana and Y. Arakawa

      Article first published online: 25 JUN 2002 | DOI: 10.1002/1521-396X(200207)192:1<33::AID-PSSA33>3.0.CO;2-C

    9. Optimisation of the Blue Emission from As-Doped GaN Films Grown by Molecular Beam Epitaxy (pages 39–43)

      C.T. Foxon, S.V. Novikov, T. Li, R.P. Campion, A.J. Winser and I. Harrison

      Article first published online: 25 JUN 2002 | DOI: 10.1002/1521-396X(200207)192:1<39::AID-PSSA39>3.0.CO;2-D

    10. Temperature and Current Dependent Capture of Injected Carriers in InGaN Single-Quantum-Well Light-Emitting Diodes (pages 44–48)

      A. Hori, D. Yasunaga, A. Satake and K. Fujiwara

      Article first published online: 25 JUN 2002 | DOI: 10.1002/1521-396X(200207)192:1<44::AID-PSSA44>3.0.CO;2-4

    11. Time-Resolved Studies of InGaN/GaN Quantum Dots (pages 49–53)

      I.L. Krestnikov, A.V. Sakharov, W.V. Lundin, A.S. Usikov, A.F. Tsatsulnikov, Yu.G. Musikhin, D. Gerthsen, N.N. Ledentsov, A. Hoffmann and D. Bimberg

      Article first published online: 25 JUN 2002 | DOI: 10.1002/1521-396X(200207)192:1<49::AID-PSSA49>3.0.CO;2-B

    12. Luminescence and Stimulated Emission from GaN on Silicon Substrates Heterostructures (pages 54–59)

      G.P. Yablonskii, E.V. Lutsenko, V.N. Pavlovskii, V.Z. Zubialevich, A.L. Gurskii, H. Kalisch, A. Szymakowskii, R.A. Jansen, A. Alam, Y. Dikme, B. Schineller and M. Heuken

      Article first published online: 25 JUN 2002 | DOI: 10.1002/1521-396X(200207)192:1<54::AID-PSSA54>3.0.CO;2-2

    13. AlGaN Nanocolumns Grown by Molecular Beam Epitaxy: Optical and Structural Characterization (pages 60–66)

      J. Ristić, M.A. Sánchez-García, E. Calleja, J. Sanchez-Páramo, J.M. Calleja, U. Jahn and K.H. Ploog

      Article first published online: 25 JUN 2002 | DOI: 10.1002/1521-396X(200207)192:1<60::AID-PSSA60>3.0.CO;2-O

    14. Cathodoluminescence and Al Composition of Biaxially Stressed AlGaN/GaN Epitaxial Layers (pages 67–71)

      In-Hwan Lee and Y. Park

      Article first published online: 25 JUN 2002 | DOI: 10.1002/1521-396X(200207)192:1<67::AID-PSSA67>3.0.CO;2-J

    15. Comparative Study of the Electronic Band Structure of Strained C-plane and M-plane GaN Films by Polarized Photoreflectance Spectroscopy (pages 72–78)

      S. Ghosh, P. Waltereit, A. Thamm, O. Brandt, H.T. Grahn and K.H. Ploog

      Article first published online: 25 JUN 2002 | DOI: 10.1002/1521-396X(200207)192:1<72::AID-PSSA72>3.0.CO;2-A

    16. Indentation of GaN: A Study of the Optical Activity and Strain State of Extended Defects (pages 79–84)

      U. Jahn, A. Trampert, Th. Wagner, O. Brandt and K.H. Ploog

      Article first published online: 25 JUN 2002 | DOI: 10.1002/1521-396X(200207)192:1<79::AID-PSSA79>3.0.CO;2-5

    17. Effect of Exciton Localization on the Quantum Efficiency of GaN/(In,Ga)N Multiple Quantum Wells (pages 85–90)

      S. Dhar, U. Jahn, O. Brandt, P. Waltereit and K.H. Ploog

      Article first published online: 25 JUN 2002 | DOI: 10.1002/1521-396X(200207)192:1<85::AID-PSSA85>3.0.CO;2-R

    18. Photoluminescence Studies on InGaN/GaN Quantum Dots (pages 91–96)

      M. Jetter, V. Perez-Solorzano, Y. Kobayashi, M. Ost, F. Scholz and H. Schweizer

      Article first published online: 1 JUL 2002 | DOI: 10.1002/1521-396X(200207)192:1<91::AID-PSSA91>3.0.CO;2-C

    19. Experimental Characterisation of GaN-Based Resonant Cavity Light Emitting Diodes (pages 97–102)

      B. Roycroft, M. Akhter, P. Maaskant, P. de Mierry, S. Fernández, F.B. Naranjo, E. Calleja, T. McCormack and B. Corbett

      Article first published online: 1 JUL 2002 | DOI: 10.1002/1521-396X(200207)192:1<97::AID-PSSA97>3.0.CO;2-D

    20. Modelling of Extraction Efficiency of GaN-Based Resonant Cavity Light Emitting Diodes Emitting at 510 nm (pages 103–109)

      A. Shaw, T. McCormack, A.L. Bradley, J.G. Lunney and J.F. Donegan

      Article first published online: 1 JUL 2002 | DOI: 10.1002/1521-396X(200207)192:1<103::AID-PSSA103>3.0.CO;2-F

    21. Electroluminescence Mapping of InGaN-based LEDs by SNOM (pages 110–116)

      G. Marutsuki, Y. Narukawa, T. Mitani, T. Mukai, G. Shinomiya, A. Kaneta, Y. Kawakami and Sg. Fujita

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200207)192:1<110::AID-PSSA110>3.0.CO;2-N

    22. Microcomposition and Luminescence of InGaN Emitters (pages 117–123)

      R.W. Martin, P.R. Edwards, K.P. O'Donnell, E.G. Mackay and I.M. Watson

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200207)192:1<117::AID-PSSA117>3.0.CO;2-W

    23. Intersubband Absorption at λ ∼ 1.2–1.6 μm in GaN/AlN Multiple Quantum Wells Grown by rf-Plasma Molecular Beam Epitaxy (pages 124–128)

      K. Kishino, A. Kikuchi, H. Kanazawa and T. Tachibana

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200207)192:1<124::AID-PSSA124>3.0.CO;2-3

    24. Optical Characterization of Cubic AlGaN/GaN Quantum Wells (pages 129–134)

      U. Köhler, D.J. As, S. Potthast, A. Khartchenko, K. Lischka, O.C. Noriega, E.A. Meneses, A. Tabata, S.C.P. Rodrigues, L.M.R. Scolfaro, G.M. Sipahi and J.R. Leite

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200207)192:1<129::AID-PSSA129>3.0.CO;2-K

    25. Blue Light by SHG in Diode Pumped LiNbO3 Waveguides (pages 135–138)

      M. Domenech, R.E. Di Paolo, G. Lifante and F. Cussó

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200207)192:1<135::AID-PSSA135>3.0.CO;2-W

    26. Injection Dependence of the Electroluminescence Spectra of Phosphor Free GaN-Based White Light Emitting Diodes (pages 139–143)

      S. Dalmasso, B. Damilano, C. Pernot, A. Dussaigne, D. Byrne, N. Grandjean, M. Leroux and J. Massies

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200207)192:1<139::AID-PSSA139>3.0.CO;2-G

    27. Line Shape Analysis of Photoreflectance Excitation Spectra of GaN Films on 6H-SiC(0001) (pages 144–150)

      U. Behn, A. Thamm, O. Brandt and H.T. Grahn

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200207)192:1<144::AID-PSSA144>3.0.CO;2-W

    28. Optical Characteristic of the Strain-Controlled GaN Epitaxial Layer Grown on 6H-SiC Substrate by an Adapting (GaN/AlN) Multibuffer Layer (pages 151–156)

      M. Horie, Y. Ishihara, J. Yamamoto, M. Kurimoto, T. Takano and H. Kawanishi

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200207)192:1<151::AID-PSSA151>3.0.CO;2-3

    29. Novel Materials and Designs for Long-Living II–VI Blue-Green Lasers (pages 157–165)

      S.V. Ivanov

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200207)192:1<157::AID-PSSA157>3.0.CO;2-G

    30. MOCVD Growth of ZnO for Optoelectronic Applications (pages 166–170)

      Th. Gruber, C. Kirchner, K. Thonke, R. Sauer and A. Waag

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200207)192:1<166::AID-PSSA166>3.0.CO;2-G

    31. Photoreflectance and Photoluminescence of Exciton-Polaritons in a ZnO Epilayer Grown on the a-Face of Sapphire by Radical-Source Molecular-Beam Epitaxy (pages 171–176)

      S.F. Chichibu, T. Sota, P.J. Fons, K. Iwata, A. Yamada, K. Matsubara and S. Niki

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200207)192:1<171::AID-PSSA171>3.0.CO;2-W

    32. New Concept for ZnTe-Based Homoepitaxial Light-Emitting Diodes Grown by Molecular Beam Epitaxy (pages 177–182)

      A. Ueta and D. Hommel

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200207)192:1<177::AID-PSSA177>3.0.CO;2-8

    33. Complete Elimination of Multi-angle Rotation Domains in ZnO Epilayers Grown on (0001) Sapphire Substrate (pages 183–188)

      X.L. Du, M. Murakami, H. Iwaki and A. Yoshikawa

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200207)192:1<183::AID-PSSA183>3.0.CO;2-K

    34. Growth of ZnO Layers by Metal Organic Chemical Vapor Phase Epitaxy (pages 189–194)

      N. Oleynik, A. Dadgar, J. Christen, J. Bläsing, M. Adam, T. Riemann, A. Diez, A. Greiling, M. Seip and A. Krost

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200207)192:1<189::AID-PSSA189>3.0.CO;2-X

    35. MBE Growth and Characterization of Hexagonal ZnCdSe Layers on GaAs(111)-A and -B Substrates (pages 195–200)

      S. Suzuki, T. Nemoto, Y. Kaifuchi, Y. Ishitani and A. Yoshikawa

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200207)192:1<195::AID-PSSA195>3.0.CO;2-8

    36. MgZnCdSe/BeZnTe Visible Light-Emitting Diode with Longer Device Lifetime over 1000 h (pages 201–205)

      S.-B. Che, I. Nomura, K. Fukada, A. Kikuchi and K. Kishino

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200207)192:1<201::AID-PSSA201>3.0.CO;2-J

    37. ZnCdTe/ZnTe Light Emitting Diodes with MgSeTe/ZnTe Superlattice Layers Grown on ZnTe Substrates by Molecular Beam Epitaxy (pages 206–211)

      Y. Ochiai, I. Nomura, S.-B. Che, A. Kikuchi and K. Kishino

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200207)192:1<206::AID-PSSA206>3.0.CO;2-#

    38. ZnO as a Material Mostly Adapted for Realisation of Room-Temperature Polariton Lasers (pages 212–217)

      A. Kavokin, M. Zamfirescu, B. Gil and G. Malpuech

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200207)192:1<212::AID-PSSA212>3.0.CO;2-B

    39. Optical Characterization of High Quality ZnTe Substrate (pages 218–223)

      K. Yoshino, A. Memon, M. Yoneta, A. Arakawa, K. Ohmori, H. Saito and M. Ohishi

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200207)192:1<218::AID-PSSA218>3.0.CO;2-O

    40. Growth Activation of ZnO Layers with H2O Vapor on a-Face of Sapphire Substrate by Metalorganic Molecular-Beam Epitaxy (pages 224–229)

      A.B.M.A. Ashrafi, I. Suemune, H. Kumano and K. Uesugi

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200207)192:1<224::AID-PSSA224>3.0.CO;2-#

    41. Nonradiative and Radiative Recombination Processes of ZnS Epitaxial Layers (pages 230–235)

      K. Yoshino, A. Memon, P. Prete, K. Ichino, H. Komaki, M. Yoneta, N. Lovergine and A.M. Mancini

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200207)192:1<230::AID-PSSA230>3.0.CO;2-B

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