physica status solidi (a)

Cover image for physica status solidi (a)

August 2002

Volume 192, Issue 2

Pages 237–471

Currently known as: physica status solidi (a)

    1. High-Power III-Nitride Emitters for Solid-State Lighting (pages 237–245)

      M.R. Krames, J. Bhat, D. Collins, N.F. Gardner, W. Götz, C.H. Lowery, M. Ludowise, P.S. Martin, G. Mueller, R. Mueller-Mach, S. Rudaz, D.A. Steigerwald, S.A. Stockman and J.J. Wierer

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<237::AID-PSSA237>3.0.CO;2-I

    2. Single Chip White LEDs (pages 246–253)

      U. Kaufmann, M. Kunzer, K. Köhler, H. Obloh, W. Pletschen, P. Schlotter, J. Wagner, A. Ellens, W. Rossner and M. Kobusch

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<246::AID-PSSA246>3.0.CO;2-I

    3. Fabrication of LEDs Based on III–V Nitrides and their Applications (pages 254–260)

      N. Shibata

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<254::AID-PSSA254>3.0.CO;2-M

    4. Expanding Emission Wavelength on Nitride Light-Emitting Devices (pages 261–268)

      T. Mukai, S. Nagahama, T. Yanamoto and M. Sano

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<261::AID-PSSA261>3.0.CO;2-U

    5. High-Power AlGaInN Lasers (pages 269–276)

      M. Takeya, T. Tojyo, T. Asano, S. Ikeda, T. Mizuno, O. Matsumoto, S. Goto, Y. Yabuki, S. Uchida and M. Ikeda

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<269::AID-PSSA269>3.0.CO;2-Z

    6. Nitride RCLEDs Grown by MBE for POF Applications (pages 277–285)

      F. Calle, F.B. Naranjo, S. Fernández, M.A. Sánchez-García, E. Calleja and E. Muñoz

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<277::AID-PSSA277>3.0.CO;2-2

    7. Deep Ultraviolet AlGaInN-Based Light-Emitting Diodes on Si(111) and Sapphire (pages 286–291)

      G. Kipshidze, V. Kuryatkov, B. Borisov, S. Nikishin, M. Holtz, S.N.G. Chu and H. Temkin

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<286::AID-PSSA286>3.0.CO;2-2

    8. Improved Responsivity of AlGaN-Based Resonant Cavity-Enhanced UV Photodetectors Grown on Sapphire by RF-MBE (pages 292–295)

      M. Yonemaru, A. Kikuchi and K. Kishino

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<292::AID-PSSA292>3.0.CO;2-E

    9. UV Light-Emitting Diode Fabricated on Hetero-ELO-Grown Al0.22Ga0.78N with Low Dislocation Density (pages 296–300)

      S. Kamiyama, M. Iwaya, S. Takanami, S. Terao, A. Miyazaki, H. Amano and I. Akasaki

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<296::AID-PSSA296>3.0.CO;2-Z

    10. Laterally Coupled InGaN/GaN DFB Laser Diodes (pages 301–307)

      H. Schweizer, H. Gräbeldinger, V. Dumitru, M. Jetter, S. Bader, G. Brüderl, A. Weimar, A. Lell and V. Härle

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<301::AID-PSSA301>3.0.CO;2-D

    11. Bright, Crack-Free InGaN/GaN Light Emitters on Si(111) (pages 308–313)

      A. Dadgar, M. Poschenrieder, O. Contreras, J. Christen, K. Fehse, J. Bläsing, A. Diez, F. Schulze, T. Riemann, F.A. Ponce and A. Krost

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<308::AID-PSSA308>3.0.CO;2-M

    12. Visible and Solar-Blind AlGaN Metal–Semiconductor–Metal Photodetectors Grown on Si(111) Substrates (pages 314–319)

      J.L. Pau, E. Muñoz, M.A. Sánchez-García and E. Calleja

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<314::AID-PSSA314>3.0.CO;2-Y

    13. Blue-Laser Structures Grown on Bulk GaN Crystals (pages 320–324)

      P. Prystawko, R. Czernecki, M. Leszczynski, P. Perlin, P. Wisniewski, L. Dmowski, H. Teisseyre, T. Suski, I. Grzegory, M. Bockowski, G. Nowak and S. Porowski

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<320::AID-PSSA320>3.0.CO;2-9

    14. Fabrication of Two-Dimensional InGaN-Based Micro-LED Arrays (pages 325–328)

      C.-W. Jeon, K.-S. Kim and M.D. Dawson

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<325::AID-PSSA325>3.0.CO;2-Q

    15. Reduction of Internal Loss and Threshold Current in a Laser Diode with a Ridge by Selective Re-Growth (RiS-LD) (pages 329–334)

      M. Kuramoto, C. Sasaoka, N. Futagawa, M. Nido and A.A. Yamaguchi

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<329::AID-PSSA329>3.0.CO;2-A

    16. Vertical Cavity InGaN LEDs Grown by MOVPE (pages 335–340)

      P. de Mierry, J.M. Bethoux, H.P.D. Schenk, M. Vaille, E. Feltin, B. Beaumont, M. Leroux, S. Dalmasso and P. Gibart

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<335::AID-PSSA335>3.0.CO;2-M

    17. From Ultraviolet to Green InGaN-Based Conventional and Resonant-Cavity Light-Emitting Diodes Grown by Molecular Beam Epitaxy (pages 341–347)

      F.B. Naranjo, S. Fernández, F. Calle, M.A. Sánchez-García and E. Calleja

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<341::AID-PSSA341>3.0.CO;2-Y

    18. Fabrication of GaN-Based Resonant Cavity LEDs (pages 348–353)

      P. Maaskant, M. Akhter, B. Roycroft, E. O'Carroll and B. Corbett

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<348::AID-PSSA348>3.0.CO;2-6

    19. GaN–InGaN Quantum Well and LED Structures Grown in a Close Coupled Showerhead (CCS) MOCVD Reactor (pages 354–359)

      E.J. Thrush, M.J. Kappers, P. Dawson, D. Graham, J.S. Barnard, M.E. Vickers, L. Considine, J.T. Mullins and C.J. Humphreys

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<354::AID-PSSA354>3.0.CO;2-I

    20. Distribution of Horizontal Dislocations in ELO-GaN (pages 360–365)

      K. Horibuchi, S. Nishimoto, M. Sueyoshi, N. Kuwano, H. Miyake and K. Hiramatsu

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<360::AID-PSSA360>3.0.CO;2-U

    21. Annihilation of Threading Dislocations in GaN/AlGaN (pages 366–370)

      N. Kuwano, T. Tsuruda, Y. Adachi, S. Terao, S. Kamiyama, H. Amano and I. Akasaki

      Article first published online: 12 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<366::AID-PSSA366>3.0.CO;2-6

    22. GaN Epitaxy: How to Characterize Hazards for the Operators (pages 371–376)

      N. Proust, M.A. Poisson, D. Thenot, M. Tordjman and A. Picot

      Article first published online: 29 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<371::AID-PSSA371>3.0.CO;2-M

    23. Improvement of Structural Properties of GaN Pendeo-Epitaxial Layers (pages 377–382)

      Hung-Seob Cheong, Young-Kue Hong, Chang-Hee Hong, Yoon-Ho Choi, Shi-Jong Leem and Hyung Jae Lee

      Article first published online: 29 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<377::AID-PSSA377>3.0.CO;2-Z

    24. Polarity Determination of Wurtzite and Zincblende Structures by TEM (pages 383–388)

      T. Mitate, Y. Sonoda and N. Kuwano

      Article first published online: 29 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<383::AID-PSSA383>3.0.CO;2-A

    25. High-Quality Distributed Bragg Reflectors for Resonant-Cavity Light-Emitting Diode Applications (pages 389–393)

      S. Fernández, F.B. Naranjo, F. Calle, M.A. Sánchez-García, E. Calleja and P. Vennéguès

      Article first published online: 29 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<389::AID-PSSA389>3.0.CO;2-N

    26. Structural Defects and Relation with Optoelectronic Properties in Highly Mg-Doped GaN (pages 394–400)

      M. Leroux, P. Vennéguès, S. Dalmasso, M. Benaissa, E. Feltin, P. de Mierry, B. Beaumont, B. Damilano, N. Grandjean and P. Gibart

      Article first published online: 29 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<394::AID-PSSA394>3.0.CO;2-2

    27. Luminescence and Morphological Properties of GaN Layers Grown on SiC/Si(111) Substrates (pages 401–406)

      M.A. Sánchez-García, J. Ristic, E. Calleja, A. Perez-Rodriguez, C. Serre, A. Romano-Rodriguez, J.R. Morante, R. Koegler, W. Skorupa, A. Trampert and K.H. Ploog

      Article first published online: 29 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<401::AID-PSSA401>3.0.CO;2-9

    28. Determination by Electron Holography of the Electronic Charge Distribution at Threading Dislocations in Epitaxial GaN (pages 407–411)

      J. Cai and F.A. Ponce

      Article first published online: 29 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<407::AID-PSSA407>3.0.CO;2-M

    29. Initial Experiments to Obtain Self-Assembled GaInN Quantum Islands by MOVPE (pages 412–416)

      V. Perez-Solorzano, Y. Kobayashi, M. Jetter, H. Schweizer, F. Scholz, E. Hahn and D. Gerthsen

      Article first published online: 29 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<412::AID-PSSA412>3.0.CO;2-1

    30. Indium Segregation Kinetics in MOVPE of InGaN-Based Heterostructures (pages 417–423)

      S.Yu. Karpov, R.A. Talalaev, I.Yu. Evstratov and Yu.N. Makarov

      Article first published online: 29 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<417::AID-PSSA417>3.0.CO;2-I

    31. Filtering Study of Threading Dislocations in AlN Buffered MBE GaN/Sapphire Using Single and Multiple High Temperature AlN Intermediate Layers (pages 424–429)

      A. Ponce, A.M. Sánchez, S.I. Molina, F. Fedler, J. Stemmer and J. Graul

      Article first published online: 29 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<424::AID-PSSA424>3.0.CO;2-Q

    32. Triangular Quantum Well of InGaN–GaN for Active Layer of Light-Emitting Device (pages 430–434)

      R.J. Choi, H.W. Shim, S.M. Jeong, H.S. Yoon, E.-K. Suh, C.-H. Hong, H.J. Lee and Y.-W. Kim

      Article first published online: 29 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<430::AID-PSSA430>3.0.CO;2-1

    33. Growth Optimisation of GaInN/GaN Multiple Quantum Well Structures: Application to RCLED Devices (pages 435–440)

      M.A. Di Forte-Poisson, A. Romann, M. Tordjman, M. Magis and J. di Persio

      Article first published online: 29 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<435::AID-PSSA435>3.0.CO;2-I

    34. Bismuth a New Surfactant or Contact for GaN Films Grown by Molecular Beam Epitaxy (pages 441–445)

      C.T. Foxon, S.V. Novikov, T. Li, R.P. Campion, A.J. Winser and I. Harrison

      Article first published online: 29 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<441::AID-PSSA441>3.0.CO;2-U

    35. Laterally Overgrown GaN on Patterned GaAs (001) Substrates by MOVPE (pages 446–452)

      S. Sanorpim, E. Takuma, K. Onabe, H. Ichinose and Y. Shiraki

      Article first published online: 29 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<446::AID-PSSA446>3.0.CO;2-A

    36. Effect of In-Doping on the Properties of as-Grown p-Type GaN Grown by Metalorganic Vapour Phase Epitaxy (pages 453–455)

      S. Yamaguchi, Y. Iwamura, Y. Watanabe, M. Kosaki, Y. Yukawa, S. Nitta, S. Kamiyama, H. Amano and I. Akasaki

      Article first published online: 29 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<453::AID-PSSA453>3.0.CO;2-I

    37. Pyramidal Defect Formation in View of Magnesium Segregation (pages 456–460)

      S. Figge, R. Kröger, T. Böttcher, P. Ryder and D. Hommel

      Article first published online: 29 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<456::AID-PSSA456>3.0.CO;2-6

    38. Deposition of Amorphous GaN by Compound Source Molecular Beam Epitaxy for Electroluminescent Devices (pages 461–465)

      T. Honda, Y. Inao, K. Konno, K. Mineo, S. Kumabe and H. Kawanishi

      Article first published online: 29 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<461::AID-PSSA461>3.0.CO;2-M

    39. Study of Low-Frequency Excess Noise Transport in Ga-Face and N-Face GaN Thin Films Grown on Intermediate-Temperature Buffer Layer by RF-MBE (pages 466–471)

      W.K. Fong, B.H. Leung, J.Q. Xie and C. Surya

      Article first published online: 29 JUL 2002 | DOI: 10.1002/1521-396X(200208)192:2<466::AID-PSSA466>3.0.CO;2-2

SEARCH

SEARCH BY CITATION