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Original Paper
High-Power AlGaInN Lasers
Article first published online: 12 JUL 2002
DOI: 10.1002/1521-396X(200208)192:2<269::AID-PSSA269>3.0.CO;2-Z
© WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2002
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Additional Information
How to Cite
Takeya, M., Tojyo, T., Asano, T., Ikeda, S., Mizuno, T., Matsumoto, O., Goto, S., Yabuki, Y., Uchida, S. and Ikeda, M. (2002), High-Power AlGaInN Lasers. phys. stat. sol. (a), 192: 269–276. doi: 10.1002/1521-396X(200208)192:2<269::AID-PSSA269>3.0.CO;2-Z
Publication History
- Issue published online: 12 JUL 2002
- Article first published online: 12 JUL 2002
- Manuscript Accepted: 20 MAR 2002
- Manuscript Received: 15 FEB 2002
- Abstract
- References
- Cited By
Keywords:
- 42.55.Px;
- 78.66.Fd;
- 81.05.Ea
Abstract
We have successfully fabricated high-power AlGaInN laser diodes with long lifetime, high kink level, wide beam divergence angle parallel to the junction plane (θ‖), and low relative intensity noise (RIN). We have also adopted a 3″ϕ sapphire substrate to improve productivity and have achieved uniform fabrication using a carefully designed quartz reactor and heating system. The introduction of a new laser structure successfully provided a dramatic improvement in device properties. In particular, the characteristic temperature (T0) was improved to 235 K, which is the highest ever reported. In addition, we fabricated a super high power (SHP) AlGaInN blue-violet laser diode array, achieving a maximum light output power of 4.2 W under cw-operation at 25 °C with a lifetime under 1 W cw-operation at 25 °C of more than 1000 h.