Temperature Dependence of Si Nanowire Morphology (pages 317–320)
H. Y. Peng, Z. W. Pan, L. Xu, X. H. Fan, N. Wang, C. S. Lee and S. T. Lee
Article first published online: 7 MAR 2001 | DOI: 10.1002/1521-4095(200103)13:5<317::AID-ADMA317>3.0.CO;2-L
Si nanostructures, including plain, tadpole-like, and chain-like nanowires(see Figure) have been fabricated under well-defined conditions. The morphology of the nanowires and the growth mechanism are shown to be dependent on the growth/substrate temperature, and can be explained by the existence of a spheroidization process.