Communication
Photonic Bandgap Engineering in Germanium Inverse Opals by Chemical Vapor Deposition
Article first published online: 25 OCT 2001
DOI: 10.1002/1521-4095(200111)13:21<1634::AID-ADMA1634>3.0.CO;2-9
© 2001 WILEY-VCH Verlag GmbH, Weinheim, Fed. Rep. of Germany
Additional Information
How to Cite
Míguez, H., Chomski, E., García-Santamaría, F., Ibisate, M., John, S., López, C., Meseguer, F., Mondia, J. P., Ozin, G. A., Toader, O. and van Driel, H. M. (2001), Photonic Bandgap Engineering in Germanium Inverse Opals by Chemical Vapor Deposition. Adv. Mater., 13: 1634–1637. doi: 10.1002/1521-4095(200111)13:21<1634::AID-ADMA1634>3.0.CO;2-9
Publication History
- Issue published online: 25 OCT 2001
- Article first published online: 25 OCT 2001
- Manuscript Accepted: 3 JUL 2001
- Manuscript Received: 29 MAR 2001
- Abstract
- References
- Cited By
Keywords:
- Chemical Vapor Deposition (CVD);
- Germanium;
- Inverse Opals
Germanium inverse opals with a full photonic bandgap in the NIR region are accessible by CVD. Deposition of digermane on sintered opals made of silica microspheres, followed by removal of the silica by etching, yields inverted Ge opals (see Figure for an SEM image of a cleaved edge, revealing the Ge layer) whose lattice parameters, network topology, and Ge coating thickness determine the optical properties of the inverse Ge opal.

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