Silicon Nanotubes (pages 1219–1221)
J. Sha, J. Niu, X. Ma, J. Xu, X. Zhang, Q. Yang and D. Yang
Article first published online: 29 AUG 2002 | DOI: 10.1002/1521-4095(20020903)14:17<1219::AID-ADMA1219>3.0.CO;2-T
The preparation of silicon nanotubes (SiNTs) using nanochannel Al2O3 as a template and a chemical vapor deposition process is reported. The outer diameters of the SiNTs are around 60 nm with walls approximately 10 nm thick consisting of crystalline and amorphous silicon. A conceptual model is presented (see Figure) to account for the formation of SiNTs (right) as opposed to nanowires (left).