The Growth of Transition Metals on H-Passivated Si(111) Substrates (pages 179–185)
J. O. Hauch, M. Fonine, U. May, R. Calarco, H. Kittur, J. M. Choi, U. Rüdiger and G. Güntherodt
Version of Record online: 31 MAY 2001 | DOI: 10.1002/1616-3028(200106)11:3<179::AID-ADFM179>3.0.CO;2-5
Cobalt and silver layers on H-passivated Si(111) surfaces have been studied by scanning tunneling microscopy (STM). The authors conclude that such layers will not be suitable for applications in magnetoelectronic devices because of their roughness and inhomogeneity. The Figure shows an STM image of a 200 Å thick Co film on a 200 Å thick Ag buffer layer—with a maze-like structure—on a H-Si(111) substrate.