Chapter 8. Mesoporous Silicon

  1. Dr. Volker Lehmann

Published Online: 6 MAR 2002

DOI: 10.1002/3527600272.ch8

Electrochemistry of Silicon: Instrumentation, Science, Materials and Applications

Electrochemistry of Silicon: Instrumentation, Science, Materials and Applications

How to Cite

Lehmann, V. (2002) Mesoporous Silicon, in Electrochemistry of Silicon: Instrumentation, Science, Materials and Applications, Wiley-VCH Verlag GmbH, Weinheim, FRG. doi: 10.1002/3527600272.ch8

Author Information

  1. Infineon Technologies AG, Corporate Research, Otto-Hahn-Ring 6, 81739 München, Germany

Publication History

  1. Published Online: 6 MAR 2002
  2. Published Print: 22 FEB 2002

ISBN Information

Print ISBN: 9783527293216

Online ISBN: 9783527600274

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Keywords:

  • mesopore formation;
  • mesopores in highly doped p-type silicon;
  • mesopores in highly doped n-type silicon;
  • spiking in low-doped n-type silicon;
  • etch pit formation;
  • avalanche breakdown in low-doped n-type silicon

Summary

  • Mesopore Formation Mechanisms

  • Mesopores in Highly Doped p-Type Silicon

  • Mesopores in Highly Doped n-Type Silicon

  • Mesopore Formation and Spiking in Low-Doped n-Type Silicon

  • Etch Pit Formation by Avalanche Breakdown in Low-Doped n-Type Silicon