Chapter 5. Diffusion in Semiconductors

  1. Kenneth A. Jackson

Published Online: 21 JUN 2005

DOI: 10.1002/3527603891.ch5

Kinetic Processes: Crystal Growth, Diffusion, and Phase Transitions in Materials

Kinetic Processes: Crystal Growth, Diffusion, and Phase Transitions in Materials

How to Cite

Jackson, K. A. (2004) Diffusion in Semiconductors, in Kinetic Processes: Crystal Growth, Diffusion, and Phase Transitions in Materials, Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, FRG. doi: 10.1002/3527603891.ch5

Author Information

  1. Arizona Materials Laboratory, Department of Materials Science and Engineering, University of Arizona, 3675 East Via Alcalde, Tucson, AZ 85718, USA

Publication History

  1. Published Online: 21 JUN 2005
  2. Published Print: 27 JUL 2004

ISBN Information

Print ISBN: 9783527306947

Online ISBN: 9783527603893

SEARCH

Keywords:

  • kinetic processes;
  • diffusion in semiconductors;
  • vacancy diffusion in silicon;
  • diffusion of phosphorus in silicon;
  • diffusion of zinc in GaAs;
  • recombination-enhanced diffusion;
  • doping of semi-conductors;
  • gettering;
  • solid-state doping

Summary

This chapter contains sections titled:

  • Introduction

    • Vacancy Diffusion in Silicon

    • Diffusion of Phosphorus in Silicon

    • Diffusion of Arsenic in Silicon

    • Diffusion of Boron in Silicon

  • Diffusion of Zinc in GaAs

  • Recombination-enhanced Diffusion

  • Doping of Semiconductors

  • Point-Defect Generation in Silicon during Crystal Growth

  • Migration of Interstitials (and Liquid Droplets) in a Temperature Gradient

  • Oxygen in Silicon

  • Gettering

  • Solid-State Doping