Vacancy Defect on a Si(100) Surface: Computer Simulation

  1. Prof. Yves Bréchet
  1. A.S Yanovsky and
  2. S.V Kolomoets

Published Online: 19 DEC 2005

DOI: 10.1002/3527606157.ch14

Microstructures, Mechanical Properties and Processes - Computer Simulation and Modelling, Volume 3

Microstructures, Mechanical Properties and Processes - Computer Simulation and Modelling, Volume 3

How to Cite

Yanovsky, A.S. and Kolomoets, S.V. (2000) Vacancy Defect on a Si(100) Surface: Computer Simulation, in Microstructures, Mechanical Properties and Processes - Computer Simulation and Modelling, Volume 3 (ed Y. Bréchet), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, FRG. doi: 10.1002/3527606157.ch14

Editor Information

  1. Institut Nat. Polytechnique de Grenoble, L.T.P.-C.M. ENSEEG, BP75, Domaine Universitaires, 38402 Saint Martin D'Hères Cedex, France; Tel.: 0033–76–82 6610; Fax: 0033–76–82 6644

Author Information

  1. Zaporozhye State University, Zaporozhye, Ukraine

Publication History

  1. Published Online: 19 DEC 2005
  2. Published Print: 20 APR 2000

Book Series:

  1. EUROMAT 99

ISBN Information

Print ISBN: 9783527301225

Online ISBN: 9783527606153

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Keywords:

  • microstructures;
  • computer simulation;
  • Si(100) surface;
  • vacancy defect

Summary

In the present work on the basis of the early experimental and theoretical works by means of MNDO semi-empirical method a vacancy defect on a Si(100) surface and its interaction with hydrogen have been simulated.