Anodization Spectroscopy Express-Control System for Thin-Film Technologies

  1. Prof. T. W. Clyne and
  2. F. Simancik
  1. Tatjana Lebedeva,
  2. Pavel Shpilevoy and
  3. Igor Voytovytch

Published Online: 21 DEC 2005

DOI: 10.1002/3527606203.ch10

Metal Matrix Composites and Metallic Foams, Volume 5

Metal Matrix Composites and Metallic Foams, Volume 5

How to Cite

Lebedeva, T., Shpilevoy, P. and Voytovytch, I. (2000) Anodization Spectroscopy Express-Control System for Thin-Film Technologies, in Metal Matrix Composites and Metallic Foams, Volume 5 (eds T. W. Clyne and F. Simancik), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, FRG. doi: 10.1002/3527606203.ch10

Editor Information

  1. Department of Materials Science and Metallurgy, Cambridge University, Pembroke Street, Cambridge CB2 3QZ, U.K.

Author Information

  1. Institute of Cybernetics of Ukrainian Academy of Sciences, Kyiv, Ukraine

Publication History

  1. Published Online: 21 DEC 2005
  2. Published Print: 20 APR 2000

Book Series:

  1. EUROMAT 99

ISBN Information

Print ISBN: 9783527301263

Online ISBN: 9783527606207

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Keywords:

  • thin-film technologies;
  • anodization spectroscopy express-control system

Summary

For successful control of thin-film technology it is necessary to obtain an information on a structure and thickness of layers, sharpness of interfaces, etc. For this purpose the numerous physical methods (electron-microscopic, spectrometric and others) were developed. Certainly, the realization of such researches expands and deepens knowledge of correlation between physical characteristics, technological conditions and working parameters of thin-film de-vices. However because of complexity, high time consuming and dearness of these methods they not so easy to use as an operating methods for the express-control that is necessary for each thin-film laboratory. More suited for this purpose is method what is known as anodization spectroscopy which as a matter of fact is a method of monitored anodic oxidation when the relationships dV/dt(t) or dV/dt(V) recorded during anodic oxidation are used as a tool for precision analysis of anodizing object. It was announced by Kadin in 1986 [1], however actually it was used by thin-film technologists since 1981 for detection of tunnel barrier in Josephson junctions Nb/Nb2O5/Nb [2] and for monitoring of technological conditions influence on interfaces in thin-film structures Al/Nb [3]. The method was developed further in Fudjitsu corporation works [4–5]. It is applied in refractory superconductor [6–8] and in semiconductor [9] thin-film technology. However it is applied only to qualitative and comparative analysis, while from our point of view possibilities of the method are much wider [10–13, 14]. The method differs from conventional by a simplicity, cheapness and rapidity. The time of the analysis takes some minutes. At the same time it is rather precision. The resolution of the method on a thickness is 0,5–0.01 nm. Our study made it apparent that the method can be applied not only for investigation of fabricated structures, but also for carrying out a series of experiments necessary to develop and to control technological processes over the entire substrate surface. We created the total express-control system for thin-film niobium-aluminum technology.