Anodization Spectroscopy Express-Control System for Thin-Film Technologies
- Prof. T. W. Clyne and
- F. Simancik
Published Online: 21 DEC 2005
Copyright © 2000 Wiley-VCH Verlag GmbH, Weinheim
Metal Matrix Composites and Metallic Foams, Volume 5
How to Cite
Lebedeva, T., Shpilevoy, P. and Voytovytch, I. (2000) Anodization Spectroscopy Express-Control System for Thin-Film Technologies, in Metal Matrix Composites and Metallic Foams, Volume 5 (eds T. W. Clyne and F. Simancik), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, FRG. doi: 10.1002/3527606203.ch10
Department of Materials Science and Metallurgy, Cambridge University, Pembroke Street, Cambridge CB2 3QZ, U.K.
- Published Online: 21 DEC 2005
- Published Print: 20 APR 2000
Print ISBN: 9783527301263
Online ISBN: 9783527606207
- thin-film technologies;
- anodization spectroscopy express-control system
For successful control of thin-film technology it is necessary to obtain an information on a structure and thickness of layers, sharpness of interfaces, etc. For this purpose the numerous physical methods (electron-microscopic, spectrometric and others) were developed. Certainly, the realization of such researches expands and deepens knowledge of correlation between physical characteristics, technological conditions and working parameters of thin-film de-vices. However because of complexity, high time consuming and dearness of these methods they not so easy to use as an operating methods for the express-control that is necessary for each thin-film laboratory. More suited for this purpose is method what is known as anodization spectroscopy which as a matter of fact is a method of monitored anodic oxidation when the relationships dV/dt(t) or dV/dt(V) recorded during anodic oxidation are used as a tool for precision analysis of anodizing object. It was announced by Kadin in 1986 , however actually it was used by thin-film technologists since 1981 for detection of tunnel barrier in Josephson junctions Nb/Nb2O5/Nb  and for monitoring of technological conditions influence on interfaces in thin-film structures Al/Nb . The method was developed further in Fudjitsu corporation works [4–5]. It is applied in refractory superconductor [6–8] and in semiconductor  thin-film technology. However it is applied only to qualitative and comparative analysis, while from our point of view possibilities of the method are much wider [10–13, 14]. The method differs from conventional by a simplicity, cheapness and rapidity. The time of the analysis takes some minutes. At the same time it is rather precision. The resolution of the method on a thickness is 0,5–0.01 nm. Our study made it apparent that the method can be applied not only for investigation of fabricated structures, but also for carrying out a series of experiments necessary to develop and to control technological processes over the entire substrate surface. We created the total express-control system for thin-film niobium-aluminum technology.