Development of Cu/Cu Interconnections Using an Indium Interlayer

  1. Prof. T. W. Clyne and
  2. F. Simancik
  1. S. Sommadossi1,
  2. P.K. Khanna2,
  3. S.K. Bhatnagar2,
  4. L. Lityńska3,
  5. P. Zięba3,
  6. W. Gust1 and
  7. E.J. Mittemijer1

Published Online: 21 DEC 2005

DOI: 10.1002/3527606203.ch38

Metal Matrix Composites and Metallic Foams, Volume 5

Metal Matrix Composites and Metallic Foams, Volume 5

How to Cite

Sommadossi, S., Khanna, P.K., Bhatnagar, S.K., Lityńska, L., Zięba, P., Gust, W. and Mittemijer, E.J. (2000) Development of Cu/Cu Interconnections Using an Indium Interlayer, in Metal Matrix Composites and Metallic Foams, Volume 5 (eds T. W. Clyne and F. Simancik), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, FRG. doi: 10.1002/3527606203.ch38

Editor Information

  1. Department of Materials Science and Metallurgy, Cambridge University, Pembroke Street, Cambridge CB2 3QZ, U.K.

Author Information

  1. 1

    Max Planck Institute for metals Research and Institute for physical Metallutgy, University of Stuttgart, Stuttgart, Germany

  2. 2

    Central Electronics Engineering Research Institute, Pilani, Rajasthan, India

  3. 3

    Institute of Metallurgy and Materials Science, Polish Academy of Sciences, Cracow, Poland

Publication History

  1. Published Online: 21 DEC 2005
  2. Published Print: 20 APR 2000

Book Series:

  1. EUROMAT 99

ISBN Information

Print ISBN: 9783527301263

Online ISBN: 9783527606207

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Keywords:

  • Cu/Cu interconnections;
  • indium underlayer

Summary

The objective of the present paper was to study indium as solder material for the fabrication of Cu/In/Cu joints. According to the Cu-In phase diagram (see Fig. 1), it can be expected that if the δ(Cu7In3) and η(Cu7In4) intermetallic phases are formed during soldering in the bond area, then the bond is thermally stable up to approximately 631 °C. The presence of the Cu11In9 phase should be avoided owing to the relatively low melting temperature (307 °C).