IV-VI and V-VI Materials for Thermoelectric Nanostructures

  1. Prof. Dr. M. Rühle2 and
  2. Prof. Dr. H. Gleiter3
  1. Armin Lambrecht,
  2. Joachim Nurnus,
  3. Harald Beyer and
  4. Harald Böttner

Published Online: 23 DEC 2005

DOI: 10.1002/352760622X.ch11

Interface Controlled Materials, Volume 9

Interface Controlled Materials, Volume 9

How to Cite

Lambrecht, A., Nurnus, J., Beyer, H. and Böttner, H. (2000) IV-VI and V-VI Materials for Thermoelectric Nanostructures, in Interface Controlled Materials, Volume 9 (eds M. Rühle and H. Gleiter), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, FRG. doi: 10.1002/352760622X.ch11

Editor Information

  1. 2

    Max-Planck-Institut für Metallforschung, Seestraße 92, 70174 Stuttgart, Germany

  2. 3

    Forschungszentrum Karlsruhe, Postfach 3640, 76021 Karlsruhe, Germany

Author Information

  1. Fraunhofer Institut Physikalische Messtechnik, Heidenhofstr. 8, D-79110 Freiburg, Germany

Publication History

  1. Published Online: 23 DEC 2005
  2. Published Print: 27 JUN 2000

Book Series:

  1. EUROMAT 99

ISBN Information

Print ISBN: 9783527301911

Online ISBN: 9783527606221



  • interface controlled materials;
  • IV-VI and V-VI materials for thermoelectric nanostructures


There is growing evidence for an enhancement of the thermoelectric figure of merit ZT in low dimensional structures. Thermoelectric nanostructures based on such materials could have a series of applications in sensors, coolers and low power energy conversion systems. Basic thermoelectric properties of Pb1–xSrx(Se,Te) epitaxial films grown by molecular beam epitaxy (MBE) on BaF2 (111) substrates are presented. The structural quality is studied by high resolution X-ray diffraction (XRD). For multi quantum well (MQW) films XRD and atomic force microscopy (AFM) analysis show high structural perfection. Measurements of transport properties indicate an enhancement of the 2D-power factor σS2. High quality Bi2Te3-layers can also be prepared on BaF2 (111) substrates using MBE. Multiple stacks of epitaxial IV-VI/V-VI layers are made. Growth characteristics were analyzed by RHEED, AFM, SEM and SIMS.