Growth and Optical Characterization of InN Thin Films Synthesized by Low Temperature Plasma Enhanced Reactionary Sputtering

  1. Prof. Dr. M. Rühle2 and
  2. Prof. Dr. H. Gleiter3
  1. Vladislav Ya. Malakhov

Published Online: 23 DEC 2005

DOI: 10.1002/352760622X.ch12

Interface Controlled Materials, Volume 9

Interface Controlled Materials, Volume 9

How to Cite

Malakhov, V. Ya. (2005) Growth and Optical Characterization of InN Thin Films Synthesized by Low Temperature Plasma Enhanced Reactionary Sputtering, in Interface Controlled Materials, Volume 9 (eds M. Rühle and H. Gleiter), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, FRG. doi: 10.1002/352760622X.ch12

Editor Information

  1. 2

    Max-Planck-Institut für Metallforschung, Seestraße 92, 70174 Stuttgart, Germany

  2. 3

    Forschungszentrum Karlsruhe, Postfach 3640, 76021 Karlsruhe, Germany

Author Information

  1. Institute for Problems of Materials Science, Kiev, Ukraine

Publication History

  1. Published Online: 23 DEC 2005
  2. Published Print: 27 JUN 2000

Book Series:

  1. EUROMAT 99

ISBN Information

Print ISBN: 9783527301911

Online ISBN: 9783527606221

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Keywords:

  • interface controlled materials;
  • InN thin films;
  • growth;
  • optical characterization;
  • low temperature plasma enhanced reactionary sputtering (LTPERS)

Summary

The presented paper demonstrates some original optical data obtained for InN polycrystalline textured films synthesized earlier and nowadays by low temperature plasma enhanced reactionary sputtered (LTPERS) technique.