Influence of Growth Parameters on the Electrical and Optical Properties of GexSiyOz Sputtered Thin Films

  1. Prof. Dr. M. Rühle2 and
  2. Prof. Dr. H. Gleiter3
  1. M. Clement,
  2. E. Iborra,
  3. J. Sangrador and
  4. I. Barberán

Published Online: 23 DEC 2005

DOI: 10.1002/352760622X.ch13

Interface Controlled Materials, Volume 9

Interface Controlled Materials, Volume 9

How to Cite

Clement, M., Iborra, E., Sangrador, J. and Barberán, I. (2000) Influence of Growth Parameters on the Electrical and Optical Properties of GexSiyOz Sputtered Thin Films, in Interface Controlled Materials, Volume 9 (eds M. Rühle and H. Gleiter), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, FRG. doi: 10.1002/352760622X.ch13

Editor Information

  1. 2

    Max-Planck-Institut für Metallforschung, Seestraße 92, 70174 Stuttgart, Germany

  2. 3

    Forschungszentrum Karlsruhe, Postfach 3640, 76021 Karlsruhe, Germany

Author Information

  1. Dto. Tecnología Electrónica, Universidad Politécnica de Madrid. Spain

Publication History

  1. Published Online: 23 DEC 2005
  2. Published Print: 27 JUN 2000

Book Series:

  1. EUROMAT 99

ISBN Information

Print ISBN: 9783527301911

Online ISBN: 9783527606221

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Keywords:

  • interface controlled materials;
  • GexSiyOz sputtered thin films;
  • optical properties;
  • electrical properties;
  • influence of growth parameters

Summary

We present a study of the influence of the growth parameters on the electrical and optical properties of GexSiyOz films obtained by RF reactive sputtering of a Ge0.85Si0.15 target. Films are characterised measuring the composition, the optical gap and the energy activation of the electrical conductivity. We analyse the effects of the sputter gas composition, the RF power applied to the target and the bias applied to the substrate on the films properties. Compositional analysis of the films shows that O is bonded to both Si and Ge atoms, forming a homogeneous amorphous semiconductor. The optical gap and the energy activation of the electrical conductivity vary smoothly with the total oxygen content of the films. The ion bombardment induced by the application of a bias voltage to the substrate causes a modification of the band tail structure reducing the electrical resistivity of the samples. Under well-controlled experimental conditions, GexSiyOz layers with electrical resistivities in the range of 104 Ω·cm and thermal coefficients as high as 5 %K−1 can be obtained.