On the Physical Nature of Traps in Polycrystalline Sb2O3

  1. Prof. Dr. M. Rühle2 and
  2. Prof. Dr. H. Gleiter3
  1. Dorina Toma,
  2. Nicolae Tigau and
  3. Luminita Moraru

Published Online: 23 DEC 2005

DOI: 10.1002/352760622X.ch16

Interface Controlled Materials, Volume 9

Interface Controlled Materials, Volume 9

How to Cite

Toma, D., Tigau, N. and Moraru, L. (2000) On the Physical Nature of Traps in Polycrystalline Sb2O3, in Interface Controlled Materials, Volume 9 (eds M. Rühle and H. Gleiter), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, FRG. doi: 10.1002/352760622X.ch16

Editor Information

  1. 2

    Max-Planck-Institut für Metallforschung, Seestraße 92, 70174 Stuttgart, Germany

  2. 3

    Forschungszentrum Karlsruhe, Postfach 3640, 76021 Karlsruhe, Germany

Author Information

  1. Department of Physics Faculty of Sciences, University of Galati, Str. Domneasca nr. 111, 6200 Galati, Romania

Publication History

  1. Published Online: 23 DEC 2005
  2. Published Print: 27 JUN 2000

Book Series:

  1. EUROMAT 99

ISBN Information

Print ISBN: 9783527301911

Online ISBN: 9783527606221

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Keywords:

  • interface controlled materials;
  • Sb2O3 polycrystalline films;
  • physical nature of traps

Summary

This paper deals with the physical phenomena occurring at the contact of Sb2O3 layers with various metals. A new approach is proposed to consider the formation of localized energy level in Sb2O3 polycrystalline films.

In order to investigate the effects of voltage generation of charge carriers, thin films samples were obtained by thermal evaporation in vacuum of Sb2O3, at a pressure of 10−5 torr, sandwiched between metallic electrodes. Silver and aluminium were used. The thickness of dielectric films varied from 0.1 to 4 µm. X-ray analysis evinced the polycrystalline structure of thin films containing the αSb2O3 phase.