Chapter 11. Charge Carrier Density Dependence of the Hole Mobility in Poly(p-phenylene vinylene)

  1. Prof. Dr. Wolfgang Brütting
  1. C. Tanase1,
  2. P. W. M. Blom1,
  3. D. M. de Leeuw2,
  4. E. J. Meijer2

Published Online: 13 FEB 2006

DOI: 10.1002/3527606637.ch11

Book Title

Physics of Organic Semiconductors

Physics of Organic Semiconductors

Additional Information

How to Cite

Tanase, C., Blom, P. W. M., de Leeuw, D. M. and Meijer, E. J. (2006) Charge Carrier Density Dependence of the Hole Mobility in Poly(p-phenylene vinylene), in Physics of Organic Semiconductors (ed W. Brütting), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, FRG. doi: 10.1002/3527606637.ch11

Editor Information

  1. Institute of Physics, University of Augsburg, Germany

Author Information

  1. 1

    Materials Science Centre, University of Groningen, The Netherlands

  2. 2

    Philips Research Laboratories, Eindhoven, The Netherlands

Publication History

  1. Published Online: 13 FEB 2006
  2. Published Print: 9 MAY 2005

ISBN Information

Print ISBN: 9783527405503

Online ISBN: 9783527606634

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CHAPTER TOOLS

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Keywords:

  • physics of organic semiconductors;
  • transport and devices;
  • charge carrier density dependence;
  • hole mobility in poly(p-phenylene vinylene);
  • local mobility;
  • field-effect mobility in FETs;
  • hole mobility in LEDs and FETs

Summary

This chapter contains sections titled:

  • Introduction

  • Experimental results and Discussion

    • Charge carrier mobility in hole-only diodes

    • Local mobility versus field-effect mobility in FETs

    • Comparison of the hole mobility in LEDs and FETs

  • Conclusions

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