Chapter 12. Analysis and Modeling of Organic Devices

  1. Prof. Dr. Wolfgang Brütting
  1. Y. Roichman,
  2. Y. Preezant,
  3. N. Rappaport,
  4. N. Tessler

Published Online: 13 FEB 2006

DOI: 10.1002/3527606637.ch12

Physics of Organic Semiconductors

Physics of Organic Semiconductors

How to Cite

Roichman, Y., Preezant, Y., Rappaport, N. and Tessler, N. (2006) Analysis and Modeling of Organic Devices, in Physics of Organic Semiconductors (ed W. Brütting), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, FRG. doi: 10.1002/3527606637.ch12

Editor Information

  1. Institute of Physics, University of Augsburg, Germany

Author Information

  1. Electrical Engineering Dept., Nanoelectronic center, Technion, Haifa, Israel

Publication History

  1. Published Online: 13 FEB 2006
  2. Published Print: 9 MAY 2005

ISBN Information

Print ISBN: 9783527405503

Online ISBN: 9783527606634

SEARCH

Keywords:

  • physics of organic semiconductors;
  • transport and devices;
  • organic devices;
  • charge transport;
  • organic light-emitting diodes;
  • field effect transistors;
  • photo-cells

Summary

This chapter contains sections titled:

  • Introduction

    • Motivation

  • Charge transport

    • The Gaussian DOS

    • The Equilibrium Charge Density

    • The diffusion coefficient

    • The mobility coefficient

  • The operation regime of organic devices

    • Contact workfunction

  • Organic Light-Emitting Diodes

    • Space charge regime

    • Contact limited regime

    • I-V Analysis of LEDs

  • Field Effect Transistors

  • Photo-Cells