Chapter 13. Fabrication and Analysis of Polymer Field-Effect Transistors

  1. Prof. Dr. Wolfgang Brütting
  1. S. Scheinert1,
  2. G. Paasch2

Published Online: 13 FEB 2006

DOI: 10.1002/3527606637.ch13

Book Title

Physics of Organic Semiconductors

Physics of Organic Semiconductors

Additional Information

How to Cite

Scheinert, S. and Paasch, G. (2006) Fabrication and Analysis of Polymer Field-Effect Transistors, in Physics of Organic Semiconductors (ed W. Brütting), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, FRG. doi: 10.1002/3527606637.ch13

Editor Information

  1. Institute of Physics, University of Augsburg, Germany

Author Information

  1. 1

    Institute of Solid State Electronics, Ilmenau Technical University, Germany

  2. 2

    Leibniz Institute for Solid State and Materials Research, Dresden, Germany

Publication History

  1. Published Online: 13 FEB 2006
  2. Published Print: 9 MAY 2005

ISBN Information

Print ISBN: 9783527405503

Online ISBN: 9783527606634

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CHAPTER TOOLS

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Keywords:

  • physics of organic semiconductors;
  • transport and devices;
  • fabrication and analysis of polymer field-effect transistors;
  • analytical estimates;
  • device characterization;
  • device analyzes;
  • selected simulation studies;
  • non-degenerate approximation for Gaussian distribution;
  • DDM with traps;
  • trap distributions

Summary

This chapter contains sections titled:

  • Introduction

  • Models

    • The Shockley current characteristics

    • Material models

    • Drift-diffusion-model and numerical simulation

  • Analytical estimates

    • Basic dependencies

    • Interrelation between material and device properties

    • Cut-off frequency

  • Experimental

    • Preparation of transistors and capacitors

    • Measuring techniques

  • Device characterization and analyzes

    • Basic procedure: P3OT devices as an example

      • Layer characterization

      • MOS capacitor

      • Thin film transistors

    • Devices made from MEH-PPV

    • Further transistor designs

      • Finger structure

      • Short channel design

    • Subthreshold currents and trap recharging

    • Hysteresis

  • Selected simulation studies

    • Formation of inversion layers

    • Trap distributions in top and bottom contact transistors with different source/drain work functions

    • Short-channel effects

  • Conclusions

  • Non-degenerate approximation for the Gaussian distribution

  • DDM with traps and trap distributions

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