Chapter 14. Organic Single-Crystal Field-Effect Transistors

  1. Prof. Dr. Wolfgang Brütting
  1. R. W. I. de Boer1,
  2. M. E. Gershenson2,
  3. A. F. Morpurgo1,
  4. V. Podzorov2

Published Online: 13 FEB 2006

DOI: 10.1002/3527606637.ch14

Book Title

Physics of Organic Semiconductors

Physics of Organic Semiconductors

Additional Information

How to Cite

de Boer, R. W. I., Gershenson, M. E., Morpurgo, A. F. and Podzorov, V. (2006) Organic Single-Crystal Field-Effect Transistors, in Physics of Organic Semiconductors (ed W. Brütting), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, FRG. doi: 10.1002/3527606637.ch14

Editor Information

  1. Institute of Physics, University of Augsburg, Germany

Author Information

  1. 1

    Department of Nanoscience, Delft University of Technology, The Netherlands

  2. 2

    Department of Physics and Astronomy, Rutgers University, Piscataway, USA

Publication History

  1. Published Online: 13 FEB 2006
  2. Published Print: 9 MAY 2005

ISBN Information

Print ISBN: 9783527405503

Online ISBN: 9783527606634

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CHAPTER TOOLS

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Keywords:

  • physics of organic semiconductors;
  • transport and devices;
  • organic single-crystal field-effect transistors (FETs);
  • fabrication;
  • characteristics;
  • crystal characterization;
  • mobility;
  • mobility anisotropy;
  • high-k dielectrics

Summary

This chapter contains sections titled:

  • Introduction

  • Fabrication of single-crystal organic FETs

    • Single-crystal growth

    • Crystal characterization

      • Polarized-light microscopy

      • The time-of-flight experiments

      • Space charge limited current spectroscopy

    • Fabrication of the field-effect structures

      • Electrostatic bonding technique

      • “Direct” FET fabrication on the crystal surface

  • Characteristics of single-crystals OFETs

    • Unipolar operation

    • Field-effect threshold

    • Sub-threshold slope

    • Double-gated rubrene FETs

    • Mobility

    • Mobility anisotropy on the surface of organic crystals.

    • Preliminary results for the OFETs with high-k dielectrics.

  • Conclusion

  • Acknowledgments

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