Chapter 2. Electronic Properties of Interfaces between Model Organic Semiconductors and Metals

  1. Prof. Dr. Wolfgang Brütting
  1. M. Knupfer,
  2. H. Peisert

Published Online: 13 FEB 2006

DOI: 10.1002/3527606637.ch2

Book Title

Physics of Organic Semiconductors

Physics of Organic Semiconductors

Additional Information

How to Cite

Knupfer, M. and Peisert, H. (2006) Electronic Properties of Interfaces between Model Organic Semiconductors and Metals, in Physics of Organic Semiconductors (ed W. Brütting), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, FRG. doi: 10.1002/3527606637.ch2

Editor Information

  1. Institute of Physics, University of Augsburg, Germany

Author Information

  1. Leibniz Institute for Solid State and Materials Research, Dresden, Germany

Publication History

  1. Published Online: 13 FEB 2006
  2. Published Print: 9 MAY 2005

ISBN Information

Print ISBN: 9783527405503

Online ISBN: 9783527606634

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CHAPTER TOOLS

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Keywords:

  • physics of organic semiconductors;
  • growth;
  • interfaces;
  • electronic properties;
  • experimental methods;
  • adsorption geometry;
  • substrate roughness;
  • organic/metal interfaces;
  • general properties and trends;
  • reactive surfaces;
  • indium-tin oxide;
  • PEDOT:PSS

Summary

This chapter contains sections titled:

  • Introduction

  • Experimental methods

    • Photoemission spectroscopy

    • Polarization dependent XAS

  • Adsorption geometry and substrate roughness

  • Organic/metal interfaces: general properties and trends

  • Reactive surfaces: indium-tin oxide and PEDOT:PSS

  • Concluding remarks

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