Chapter 3. Kelvin Probe Study of Band Bending at Organic Semiconductor/Metal Interfaces: Examination of Fermi Level Alignment

  1. Prof. Dr. Wolfgang Brütting
  1. H. Ishii1,
  2. N. Hayashi2,
  3. E. Ito3,
  4. Y. Washizu2,
  5. K. Sugi1,
  6. Y. Kimura1,
  7. M. Niwano1,
  8. O. Ouchi4,
  9. K. Seki5

Published Online: 13 FEB 2006

DOI: 10.1002/3527606637.ch3

Book Title

Physics of Organic Semiconductors

Physics of Organic Semiconductors

Additional Information

How to Cite

Ishii, H., Hayashi, N., Ito, E., Washizu, Y., Sugi, K., Kimura, Y., Niwano, M., Ouchi, O. and Seki, K. (2006) Kelvin Probe Study of Band Bending at Organic Semiconductor/Metal Interfaces: Examination of Fermi Level Alignment, in Physics of Organic Semiconductors (ed W. Brütting), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, FRG. doi: 10.1002/3527606637.ch3

Editor Information

  1. Institute of Physics, University of Augsburg, Germany

Author Information

  1. 1

    Research Institute of Electrical Communication, Tohoku University, Japan

  2. 2

    Venture Business Laboratory, Nagoya University, Japan

  3. 3

    Local Spatio-Temporal Functions Laboratory, Wako, Japan

  4. 4

    Graduate School of Science, Nagoya University, Japan

  5. 5

    Research Center for Materials Science, Nagoya University, Japan

Publication History

  1. Published Online: 13 FEB 2006
  2. Published Print: 9 MAY 2005

ISBN Information

Print ISBN: 9783527405503

Online ISBN: 9783527606634

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CHAPTER TOOLS

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Keywords:

  • physics of organic semiconductors;
  • growth;
  • interfaces;
  • Kelvin probe (KP) study;
  • band bending;
  • organic semiconductor/metal interfaces;
  • examination of Fermi level alignment

Summary

This chapter contains sections titled:

  • Introduction

    • Energy level alignment at organic/metal interfaces

  • Basic aspects of band bending

    • Band bending in thermal equilibrium

    • Band bending in nonequilibrium

  • KP measurements for insulating surface

  • Experimental

  • Results ans Discussion

    • C60/metal interface: case of band bending

    • TPD/metal interface: case for no band bending

    • Potential gradient built in Alq3 film

    • Concluding Remarks

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