A New Ultra-Light Flexible Large Area Thin Film PSD Based on Amorphous Silicon

  1. Dr. K. Grassie2,
  2. Prof. Dr. E. Teuckhoff3,
  3. Prof. Dr. G. Wegner4,
  4. Prof. Dr. J. Hausselt5 and
  5. Prof. Dr. H. Hanselka6
  1. Elvira Fortunato,
  2. Isabel Ferreira,
  3. Franco Giuliani and
  4. Rodrigo Martins

Published Online: 27 APR 2006

DOI: 10.1002/3527607420.ch70

Functional Materials, Volume 13

Functional Materials, Volume 13

How to Cite

Fortunato, E., Ferreira, I., Giuliani, F. and Martins, R. (2000) A New Ultra-Light Flexible Large Area Thin Film PSD Based on Amorphous Silicon, in Functional Materials, Volume 13 (eds K. Grassie, E. Teuckhoff, G. Wegner, J. Hausselt and H. Hanselka), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, FRG. doi: 10.1002/3527607420.ch70

Editor Information

  1. 2

    Philips Forschungslaboratorium, Postfach 500145, 52085 Aachen, Germany

  2. 3

    Siemens AG, Postfach 3240, 91050 Erlangen, Germany

  3. 4

    Max-Planck-Institut für Polymerforschung, Ackermannweg 10, 55128 Mainz, Germany

  4. 5

    Forschungszentrum Karlsruhe, Postfach 3640, 76201 Karlsruhe, Germany

  5. 6

    Institut für Mechanik, Otto-von-Guericke-Universität Magdeburg, Universitätsplatz 2, 39160 Magdeburg, Germany

Author Information

  1. Department of Materials Science, CENIMAT, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, 2825-114 Caparica, Portugal

Publication History

  1. Published Online: 27 APR 2006
  2. Published Print: 27 JUN 2000

Book Series:

  1. EUROMAT 99

ISBN Information

Print ISBN: 9783527302543

Online ISBN: 9783527607426

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Keywords:

  • functional materials;
  • one dimensional (1D) a-Si:H thin film position detectors;
  • Kapton – polyamide foil

Summary

In this paper we present the electro-optical performances of one dimensional (1D) a-Si:H thin film position detectors deposited on polymeric substrates (Kapton – polyamide foil), compatible with all the steps of the deposition of the materials that constitute the final device as well as with the photolithographic techniques used. Apart from that, we also demonstrate that when improved interfaces are produced the back metal contact does not need to cover the entire back area of the sensor to produce the required reference equipotential.