Chapter 9. Strain, Chemical Composition, and Defects Analysis at Atomic Level in GaN-based Epitaxial Layers

  1. Pierre Ruterana5,
  2. Martin Albrecht6 and
  3. Jörg Neugebauer7
  1. Slawomir Kret1,
  2. Pierre Ruterana5,
  3. Claude Delamarre2,
  4. Tarek Benabbas3 and
  5. Pawel Dluzewski4

Published Online: 7 JUN 2006

DOI: 10.1002/3527607641.ch9

Nitride Semiconductors: Handbook on Materials and Devices

Nitride Semiconductors: Handbook on Materials and Devices

How to Cite

Kret, S., Ruterana, P., Delamarre, C., Benabbas, T. and Dluzewski, P. (2003) Strain, Chemical Composition, and Defects Analysis at Atomic Level in GaN-based Epitaxial Layers, in Nitride Semiconductors: Handbook on Materials and Devices (eds P. Ruterana, M. Albrecht and J. Neugebauer), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, FRG. doi: 10.1002/3527607641.ch9

Editor Information

  1. 5

    LERMAT, FRE 2149 CNRS, ISMRA, 6 Bd du Maréchal Juin, 14050 Caen Cedex, France

  2. 6

    University of Erlangen, Germany

  3. 7

    Fritz-Haber-Institut der MPG, Faradayweg 4–6, 14195 Berlin, Germany

Author Information

  1. 1

    Institute of Physics, PAS Al. Lotników 32/46, 02-668 Warszawa, Poland

  2. 2

    Laboratoire de Physique du Solide, E.S.P.C.I., CNRS UPR 05, 10 rue Vauquelin, 75231 Paris cedex 05, France

  3. 3

    Laboratoire de Structure et Propriétés de l'Etat Solide (UPRESA 8008), USTL, Bâtiment C6, 59655 Villeneuve d'Ascq cedex, France

  4. 4

    Institute of Fundamental Technological Research, PAS ul. Swietokrzyska 21, 02-049 Warszawa, Poland

  5. 5

    LERMAT, FRE 2149 CNRS, ISMRA, 6 Bd du Maréchal Juin, 14050 Caen Cedex, France

Publication History

  1. Published Online: 7 JUN 2006
  2. Published Print: 26 MAR 2003

ISBN Information

Print ISBN: 9783527403875

Online ISBN: 9783527607648

SEARCH

Keywords:

  • GaN-based epitaxial layers;
  • strain;
  • chemical composition;
  • defects analysis at atomic level in GaN-based epitaxial layers;
  • suitable images for quantitative analysis;
  • digitization;
  • noise;
  • strain measurement;
  • foil-thickness effect;
  • local chemical composition;
  • atomic structure retrieval

Summary

This chapter contains sections titled:

  • Introduction

  • Suitable Images for Quantitative Analysis

  • Digitization

  • Noise

  • Strain Measurement

    • Domain of Application

    • Assumptions

    • Peak-finding Procedure

      • Overview

      • Procedure

        • Selection of Area of Interest

        • Noise Reduction

        • Detection of the Lattice Sites

        • Reference Area and Calculation of the Base Vectors

        • Lattice Distortion in Discrete and Quasicontinuum Form

    • The Geometric-Phase Method

    • Peak Finding Versus Geometric Phase

  • Foil-Thickness Effect

  • From Strain to Stress

  • Local Chemical Composition

  • Atomic-Structure Retrieval

    • Artefact-free Sample and Signal-to-Noise Ratio

    • Defect-Structure Determination Strategies

    • Preprocessing of Image Data and Image Simulations

    • Quality Functions (Goodness-of-Fit Criteria)

    • Determination of the Imaging Parameters

    • Optimization Strategies

    • Precision of the Structure Retrieval

  • Discussion and Conclusions

  • Acknowledgments

  • References