12. Shallow Trench Isolation Chemical Mechanical Planarization

  1. Yuzhuo Li
  1. Yordan Stefanov and
  2. Udo Schwalke

Published Online: 23 MAR 2007

DOI: 10.1002/9780470180907.ch12

Microelectronic Applications of Chemical Mechanical Planarization

Microelectronic Applications of Chemical Mechanical Planarization

How to Cite

Stefanov, Y. and Schwalke, U. (2007) Shallow Trench Isolation Chemical Mechanical Planarization, in Microelectronic Applications of Chemical Mechanical Planarization (ed Y. Li), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470180907.ch12

Editor Information

  1. Center for Advanced Materials Processing, Department of Chemistry, Clarkson University, 8 Clarkson Avenue, Potsdam, NY 13699, USA

Author Information

  1. Institute for Semiconductor Technology, Darmstadt University of Technology, Schlossgartenstr. 8, 64289 Darmstadt, Germany

Publication History

  1. Published Online: 23 MAR 2007
  2. Published Print: 5 OCT 2007

ISBN Information

Print ISBN: 9780471719199

Online ISBN: 9780470180907

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Keywords:

  • device isolation technology;
  • reactive ion etching and chemical vapor deposition;
  • center-to-edge polishing uniformity

Summary

This chapter contains sections titled:

  • Introduction

  • LOCOS to STI

  • Shallow Trench Isolation

  • The Planarization Step in Detail

  • Optimization Techniques

  • Outlook

  • Acknowledgments

  • Questions

  • References