13. Consumables for Advanced Shallow Trench Isolation (STI)

  1. Yuzhuo Li
  1. Craig D. Burkhard

Published Online: 23 MAR 2007

DOI: 10.1002/9780470180907.ch13

Microelectronic Applications of Chemical Mechanical Planarization

Microelectronic Applications of Chemical Mechanical Planarization

How to Cite

Burkhard, C. D. (2007) Consumables for Advanced Shallow Trench Isolation (STI), in Microelectronic Applications of Chemical Mechanical Planarization (ed Y. Li), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470180907.ch13

Editor Information

  1. Center for Advanced Materials Processing, Department of Chemistry, Clarkson University, 8 Clarkson Avenue, Potsdam, NY 13699, USA

Author Information

  1. Center for Advanced Materials Processing, Clarkson University, 8 Clarkson Avenue, Potsdam, NY 13699, USA

Publication History

  1. Published Online: 23 MAR 2007
  2. Published Print: 5 OCT 2007

ISBN Information

Print ISBN: 9780471719199

Online ISBN: 9780470180907

SEARCH

Keywords:

  • low-pressure chemical vapor deposition;
  • particle isoelectric point;
  • zeta-potential measurement

Summary

This chapter contains sections titled:

  • Introduction

  • Representative Testing Wafers for STI Process and Consumable Evaluations

  • Effects of Abrasive Types on STI Slurry Performance

  • Effects of Chemical Additives to Oxide: Nitride Selectivity

  • Effect of Slurry pH

  • Effect of Abrasive Particle Size on Removal Rate and Defectivity

  • Conclusion

  • Questions

  • References