16. Post-CMP Cleaning

  1. Yuzhuo Li
  1. Jin-Goo Park1,
  2. Ahmed A. Busnaina2 and
  3. Yi-Koan Hong1

Published Online: 23 MAR 2007

DOI: 10.1002/9780470180907.ch16

Microelectronic Applications of Chemical Mechanical Planarization

Microelectronic Applications of Chemical Mechanical Planarization

How to Cite

Park, J.-G., Busnaina, A. A. and Hong, Y.-K. (2007) Post-CMP Cleaning, in Microelectronic Applications of Chemical Mechanical Planarization (ed Y. Li), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470180907.ch16

Editor Information

  1. Center for Advanced Materials Processing, Department of Chemistry, Clarkson University, 8 Clarkson Avenue, Potsdam, NY 13699, USA

Author Information

  1. 1

    Division of Materials and Chemical Engineering, Hanyang University, Ansan 426-791, Korea

  2. 2

    NSF Center for Microcontamination Control, Northeastern University, Boston, MA 02115, USA

Publication History

  1. Published Online: 23 MAR 2007
  2. Published Print: 5 OCT 2007

ISBN Information

Print ISBN: 9780471719199

Online ISBN: 9780470180907

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Keywords:

  • single-wafer megasonic cleaner;
  • double-sided scrubber and spin–rinse dryer;
  • hydrodynamic boundary layer

Summary

This chapter contains sections titled:

  • Introduction

  • Types of Post-CMP Cleaning Processes

  • Post-CMP Cleaning Chemistry

  • Post-CMP Cleaning According to Applications

  • Adhesion Force, Friction Force, and Defects During Cu CMP

  • Case Study: Megasonic Post-CMP Cleaning of Thermal Oxide Wafers

  • Summary

  • Acknowledgment

  • Questions

  • References