17. Defects Observed on the Wafer after the CMP Process

  1. Yuzhuo Li
  1. Paul Lefevre

Published Online: 23 MAR 2007

DOI: 10.1002/9780470180907.ch17

Microelectronic Applications of Chemical Mechanical Planarization

Microelectronic Applications of Chemical Mechanical Planarization

How to Cite

Lefevre, P. (2007) Defects Observed on the Wafer after the CMP Process, in Microelectronic Applications of Chemical Mechanical Planarization (ed Y. Li), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470180907.ch17

Editor Information

  1. Center for Advanced Materials Processing, Department of Chemistry, Clarkson University, 8 Clarkson Avenue, Potsdam, NY 13699, USA

Author Information

  1. Fujimi Corporation, 12929 SW Wilmington Lane, Tigard, OR 97224, USA

Publication History

  1. Published Online: 23 MAR 2007
  2. Published Print: 5 OCT 2007

ISBN Information

Print ISBN: 9780471719199

Online ISBN: 9780470180907

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Keywords:

  • defect-causing oversized particles;
  • defect inspection tool;
  • slurry and organic residues

Summary

This chapter contains sections titled:

  • Introduction

  • Defects After Oxide CMP

  • Defects After Polysilicon CMP

  • Defects After Tungsten CMP

  • Defects After Copper CMP

  • Defect Observation and Characterization Techniques

  • Ensemble Defect Detection and Inspection Techniques

  • Consideration for the Future