8. Corrosion Inhibitor for Cu CMP Slurry

  1. Yuzhuo Li
  1. Suresh Kumar Govindaswamy1 and
  2. Yuzhuo Li2

Published Online: 23 MAR 2007

DOI: 10.1002/9780470180907.ch8

Microelectronic Applications of Chemical Mechanical Planarization

Microelectronic Applications of Chemical Mechanical Planarization

How to Cite

Govindaswamy, S. K. and Li, Y. (2007) Corrosion Inhibitor for Cu CMP Slurry, in Microelectronic Applications of Chemical Mechanical Planarization (ed Y. Li), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470180907.ch8

Editor Information

  1. Center for Advanced Materials Processing, Department of Chemistry, Clarkson University, 8 Clarkson Avenue, Potsdam, NY 13699, USA

Author Information

  1. 1

    Micron Technology, Inc., Mail Stop 3-314, 9600 Godwin Drive, Manassas, VA 20110, USA

  2. 2

    Center for Advanced Materials Processing, Department of Chemistry, Clarkson University, 8 Clarkson Avenue, Potsdam, NY 13699, USA

Publication History

  1. Published Online: 23 MAR 2007
  2. Published Print: 5 OCT 2007

ISBN Information

Print ISBN: 9780471719199

Online ISBN: 9780470180907

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Keywords:

  • oxidizer–complexing agent;
  • static etch and material removal rate;
  • corrosion-inhibiting characteristics

Summary

This chapter contains sections titled:

  • Thermodynamic Considerations of Copper Surface

  • Types of Passivating Films on Copper Surface Under Oxdizing Conditions

  • Effect of pH on BTA in Glycine-Hydrogen Peroxide Based Cu CMP Slurry

  • Evaluation of Potential BTA Alternatives for Acidic Cu CMP Slurry

  • Electrochemical Polarization Study of Corrosion Inhibitors in Cu CMP Slurry

  • Hydrophobicity of the Surface Passivation Film

  • Competitive Surface Adsorption Behavior of Corrosion Inhibitors

  • Summary

  • Questions

  • References