20. Optimization of the Back Contact of Power MOSFETs

  1. Dr. Genichi Taguchi engineering Executive Director Honorary Member,
  2. Dr. Subir Chowdhury aerospace engineering, industrial management chairman CEO world leader strategist author honorary member honorary doctorate and
  3. Yuin Wu B.S. in chemical engineering professor Executive Director consultant

Published Online: 26 NOV 2007

DOI: 10.1002/9780470258354.cs20

Taguchi's Quality Engineering Handbook

Taguchi's Quality Engineering Handbook

How to Cite

Taguchi, G., Chowdhury, S. and Wu, Y. (2004) Optimization of the Back Contact of Power MOSFETs, in Taguchi's Quality Engineering Handbook, John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470258354.cs20

Author Information

  1. American Supplier Institute (ASI), USA

Publication History

  1. Published Online: 26 NOV 2007
  2. Published Print: 22 OCT 2004

ISBN Information

Print ISBN: 9780471413349

Online ISBN: 9780470258354

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Keywords:

  • MOSFET;
  • doping and annealing processes;
  • SN ratios and sensitivity

Summary

This chapter contains sections titled:

  • Introduction

  • Structure of Back Contact

  • Fundamental Functions and Measurement Characteristics

  • SN Ratio and Sensitivity

  • Design of Experiments and Results

  • Analysis of Optimal Conditions and Confirmatory Experiment

  • Reference