61. Chemical Etching of Silicon Carbide Ceramic Surface in Chlorine-Containing Gas Mixtures

  1. Edgar Lara-Curzio and
  2. Michael J. Readey
  1. A. V. Zinovev,
  2. J. F. Moore,
  3. J. Hryn,
  4. O. Auciello,
  5. J. Carlisle and
  6. M. J. Pellin

Published Online: 26 MAR 2008

DOI: 10.1002/9780470291191.ch61

28th International Conference on Advanced Ceramics and Composites B: Ceramic Engineering and Science Proceedings, Volume 25, Issue 4

28th International Conference on Advanced Ceramics and Composites B: Ceramic Engineering and Science Proceedings, Volume 25, Issue 4

How to Cite

Zinovev, A. V., Moore, J. F., Hryn, J., Auciello, O., Carlisle, J. and Pellin, M. J. (2004) Chemical Etching of Silicon Carbide Ceramic Surface in Chlorine-Containing Gas Mixtures, in 28th International Conference on Advanced Ceramics and Composites B: Ceramic Engineering and Science Proceedings, Volume 25, Issue 4 (eds E. Lara-Curzio and M. J. Readey), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470291191.ch61

Author Information

  1. Argonne National Laboratory, Material Science Division 9700, S. Cass. Ave, Argonne, Illinois, 60439.

Publication History

  1. Published Online: 26 MAR 2008
  2. Published Print: 1 JAN 2004

ISBN Information

Print ISBN: 9780470051528

Online ISBN: 9780470291191

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Keywords:

  • silicon nitride;
  • lutetium disilicate;
  • x-ray difiactometry;
  • oxidation resistance;
  • oxygen diffusion

Summary

The results of chemical etching of industrially produced SiC ceramic seals in chlorine- contained gas mixtures with varying Cl2 and H2 concentrations, temperatures and treatment durations are reported. The etching progress was followed by XPS, which allowed monitoring the concentration and chemical state of the main elements present in the experimental samples. Due to preferable reaction of Cl2 with Si rather than C, selective etching of the SiC surface can take place and a surface layer consisting of different carbon polytrophic forms was created. Micro Raman spectroscopy and scanning electron microscopy (SEM) were also used for analysis of the films. Depth profiling of the created films showed a smooth change of C/Si ratio deep into the film and the absence of a sharp edge that would indicate a reaction interface. The adhesion tests of created films were conducted and demonstrated very high contact force between film and substrate.