94. Microwave Plasma Chemical Vapor Deposition (CVD) of Carbon Based Films in the System C-N

  1. Edgar Lara-Curzio and
  2. Michael J. Readey
  1. R. Ramamurti,
  2. R. S. Kukreja,
  3. L. Guo,
  4. V. Shanov and
  5. R. N. Singh

Published Online: 26 MAR 2008

DOI: 10.1002/9780470291191.ch94

28th International Conference on Advanced Ceramics and Composites B: Ceramic Engineering and Science Proceedings, Volume 25, Issue 4

28th International Conference on Advanced Ceramics and Composites B: Ceramic Engineering and Science Proceedings, Volume 25, Issue 4

How to Cite

Ramamurti, R., Kukreja, R. S., Guo, L., Shanov, V. and Singh, R. N. (2004) Microwave Plasma Chemical Vapor Deposition (CVD) of Carbon Based Films in the System C-N, in 28th International Conference on Advanced Ceramics and Composites B: Ceramic Engineering and Science Proceedings, Volume 25, Issue 4 (eds E. Lara-Curzio and M. J. Readey), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470291191.ch94

Author Information

  1. Department of Materials Science and Engineering, University of Cincinnati, P. O. Box 210012, Cincinnati, OH 45221-0012

Publication History

  1. Published Online: 26 MAR 2008
  2. Published Print: 1 JAN 2004

ISBN Information

Print ISBN: 9780470051528

Online ISBN: 9780470291191

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Keywords:

  • continuous stiffness measurement;
  • pulsed laser deposition;
  • nanocomposites;
  • elastic modulus;
  • thermal expansion

Summary

Carbon based films including nanocrystalline diamond (NCD) was successfully deposited on Si (100) from methane-hydrogen-nitrogen gas microwave plasmas. Effects of nitrogen and methane concentration on the growth rate, and film morphology are studied. In-situ mass spectrometry and optical emission spectroscopy of the gaseous phase was used to identify chemical reactants and products during the microwave plasma chemical vapor deposition (MPCVD). The films were characterized by Raman spectroscopy, XRD, and SEM.