22. The Oxidation of Aluminum Silicon Carbide

  1. Dongming Zhu and
  2. Kevin Plucknett
  1. Roger Wills1 and
  2. Steve Goodrich2

Published Online: 26 MAR 2008

DOI: 10.1002/9780470291238.ch22

Advances in Ceramic Coatings and Ceramic-Metal Systems: Ceramic Engineering and Science Proceedings, Volume 26, Number 3

Advances in Ceramic Coatings and Ceramic-Metal Systems: Ceramic Engineering and Science Proceedings, Volume 26, Number 3

How to Cite

Wills, R. and Goodrich, S. (2005) The Oxidation of Aluminum Silicon Carbide, in Advances in Ceramic Coatings and Ceramic-Metal Systems: Ceramic Engineering and Science Proceedings, Volume 26, Number 3 (eds D. Zhu and K. Plucknett), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470291238.ch22

Author Information

  1. 1

    University of Dayton Research Institute 300 College Park Ave. Dayton, OH, 45469-0162

  2. 2

    University of Dayton Research Institute 300 College Park Ave. Dayton, OH, 45469-0162

Publication History

  1. Published Online: 26 MAR 2008
  2. Published Print: 1 JAN 2005

ISBN Information

Print ISBN: 9781574982336

Online ISBN: 9780470291238

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Keywords:

  • carbide;
  • amorphous;
  • aluminum;
  • oxygen;
  • hygrometer

Summary

The oxidation of Al4SiC4 has been studied in the temperature range 1400° to 1500°C in both air and water vapor saturated air environments at normal pressure and low gas flow rates. The oxidation behaviour in both environments followed parabolic kinetics with an activation energy of 179 kJ/mole, but, unlike silicon carbide and nitride, the oxidation rate was unaffected by the addition of water vapor due to the presence of an outer alumina oxide layer. The reaction kinetics cannot be explained by diffusion through any crystalline or amorphous layer. During oxidation two oxide layers formed, an inner layer of mullite with an outer layer of alumina.