11. Dielectric and Microstructural Properties of Ba(Ti1−xZrx)O3 Thin Films on Copper Substrates

  1. Sheng Yao,
  2. Bruce Tuttle,
  3. Clive Randall and
  4. Dwight Viehland
  1. J. F. Ihlefeld1,
  2. J-P. Maria1 and
  3. W. Borland2

Published Online: 26 MAR 2008

DOI: 10.1002/9780470291252.ch11

Advances in Electronic Ceramic Materials: Ceramic Engineering and Science Proceedings, Volume 26, Number 5

Advances in Electronic Ceramic Materials: Ceramic Engineering and Science Proceedings, Volume 26, Number 5

How to Cite

Ihlefeld, J. F., Maria, J.-P. and Borland, W. (2008) Dielectric and Microstructural Properties of Ba(Ti1−xZrx)O3 Thin Films on Copper Substrates, in Advances in Electronic Ceramic Materials: Ceramic Engineering and Science Proceedings, Volume 26, Number 5 (eds S. Yao, B. Tuttle, C. Randall and D. Viehland), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470291252.ch11

Author Information

  1. 1

    Department of Materials Science and Engineering North Carolina State University Raleigh, North Carolina 27606

  2. 2

    DuPont Electronic Technologies Research Triangle Park, North Carolina 27709

Publication History

  1. Published Online: 26 MAR 2008
  2. Published Print: 1 JAN 2005

ISBN Information

Print ISBN: 9781574982350

Online ISBN: 9780470291252

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Keywords:

  • crystallizing;
  • dimensions;
  • ferroelectric family;
  • permittivity;
  • characteristics

Summary

Barium titanate zirconate, Ba(Ti1-xZrxO3 (0 ≤ × ≤ 0.25), thin films were deposited via the chemical solution deposition (CSD) process directly on copper foils. The films were processed in a reductive atmosphere containing water vapor and hydrogen gas at 900°C in order to preserve the metallic copper substrate while crystallizing the film into a perovskite structure. The microstructure and phase transition phenomena of films were studied utilizing x-ray diffraction, atomic force microscopy, and the temperature dependence of the dielectric constant and loss tangent. Increasing the fraction of BaZrO3 revealed several effects, including an increase in unit cell dimensions, a decrease in both the temperature and value of the maximum permittivity, as well as a decrease in the average grain size of the films. Films were analyzed for dispersion in the transition temperature with frequency. Results indicated that films containing 25 mol% BaZrO3 demonstrate a shift in the temperature of the ferroelectric phase transition with increasing measurement frequency. This shift, combined with the dispersive nature of the transition, suggests that films of this composition are of the relaxor ferroelectric family. The ability to process high permittivity thin film materials directly on inexpensive copper substrates has strong technological implications toward embedded passives and efficient frequency agile devices.