24. Dimension Stability Analysis of Nite Sic/Sic Composite Using Ion Bombardments for the Investigation of Reliability as Fusion Materials

  1. Manuel E. Brito,
  2. Peter Filip,
  3. Charles Lewinsohn,
  4. Ali Sayir,
  5. Mark Opeka and
  6. William M. Mullins
  1. H. Kishimoto,
  2. T. Hinoki,
  3. K. Ozawa,
  4. K-H. Park,
  5. S. Kondo and
  6. A. Kohyama

Published Online: 26 MAR 2008

DOI: 10.1002/9780470291283.ch24

Developments in Advanced Ceramics and Composites: Ceramic Engineering and Science Proceedings, Volume 26, Number 8

Developments in Advanced Ceramics and Composites: Ceramic Engineering and Science Proceedings, Volume 26, Number 8

How to Cite

Kishimoto, H., Hinoki, T., Ozawa, K., Park, K.-H., Kondo, S. and Kohyama, A. (2005) Dimension Stability Analysis of Nite Sic/Sic Composite Using Ion Bombardments for the Investigation of Reliability as Fusion Materials, in Developments in Advanced Ceramics and Composites: Ceramic Engineering and Science Proceedings, Volume 26, Number 8 (eds M. E. Brito, P. Filip, C. Lewinsohn, A. Sayir, M. Opeka and W. M. Mullins), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470291283.ch24

Author Information

  1. Institute of Advanced Energy, Kyoto University Gokasho, Uji, Kyoto 611–0011, Japan

Publication History

  1. Published Online: 26 MAR 2008
  2. Published Print: 1 JAN 2005

ISBN Information

Print ISBN: 9781574982619

Online ISBN: 9780470291283

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Keywords:

  • infiltration;
  • temperature;
  • monolithic;
  • stoichiometric;
  • environments

Summary

A new process for fabricating of SiC/SiC composite, the Nano-powder Infiltration and Transient (NITE) method produces dense, high strength SiC materials with potential applications in fission or fusion reactors. Irradiation effects reduce the performance of materials due to accumulation of point defects. In this research, SiC/SiC composite fabricated by the NTTE process was irradiated with Si-ions. Post-irradiation investigation was performed by TEM. The ion-irradiation experiments were performed using a 1.7 MeV tandem accelerator at DuET facility in Institute of Advanced Energy, Kyoto University. Irradiation temperature and dose were up to 1200 °C and 10 dpa. The SiC matrix was well crystallized and contained a small amount of secondary phases. The EDX analysis specified that the secondary phase was aluminum-rich. The SiC grains and the secondly phase exhibited enough rnicrostructural and dimensional stability after the Si-ion.