36. Synthesis and Characterization of Cubic Silicon Carbide (β-SiC) and Trigonal Silicon Nitride (α-Si3N4) Nanowires

  1. Manuel E. Brito,
  2. Peter Filip,
  3. Charles Lewinsohn,
  4. Ali Sayir,
  5. Mark Opeka and
  6. William M. Mullins
  1. Karine Saulig-Wenger1,
  2. Mikhael Bechelany1,
  3. David Cornu1,
  4. Samuel Bernard1,
  5. Fernand Chassagneux1,
  6. Philippe Miele1 and
  7. Thierry Epicier2

Published Online: 26 MAR 2008

DOI: 10.1002/9780470291283.ch36

Developments in Advanced Ceramics and Composites: Ceramic Engineering and Science Proceedings, Volume 26, Number 8

Developments in Advanced Ceramics and Composites: Ceramic Engineering and Science Proceedings, Volume 26, Number 8

How to Cite

Saulig-Wenger, K., Bechelany, M., Cornu, D., Bernard, S., Chassagneux, F., Miele, P. and Epicier, T. (2005) Synthesis and Characterization of Cubic Silicon Carbide (β-SiC) and Trigonal Silicon Nitride (α-Si3N4) Nanowires, in Developments in Advanced Ceramics and Composites: Ceramic Engineering and Science Proceedings, Volume 26, Number 8 (eds M. E. Brito, P. Filip, C. Lewinsohn, A. Sayir, M. Opeka and W. M. Mullins), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470291283.ch36

Author Information

  1. 1

    Laboratoire des Multimatériaux et Interfaces UMR 5615 CNRS University Claude Bernard — Lyon 1 43 Bd du 11 novembre 1918 F-69622 Villeurbanne Cedex, France

  2. 2

    GEMPPM UMR 5510 CNRS — INSA Lyon 20 Avenue Albert Einstein F-69621 Villeurbanne Cedex, France

Publication History

  1. Published Online: 26 MAR 2008
  2. Published Print: 1 JAN 2005

ISBN Information

Print ISBN: 9781574982619

Online ISBN: 9780470291283

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Keywords:

  • temperature;
  • carbide;
  • graphite;
  • nanostructures;
  • powder

Summary

By varying the final heating temperature in the range 1050°C — 1300°C, cubic silicon carbide (β-SiC) and/or trigonal silicon nitride (α-Si3N4) nanowires (NWs) were prepared by direct thermal treatment under nitrogen, of commercial silicon powder and graphite. Long and highly curved β-SiC NWs were preferentially grown below 1200°C, while straight and short α-Si3N4 NWs were formed above 1300°C. Between these two temperatures, a mixture of both nanowires was obtained. The structure and chemical composition of these nanostructures have been investigated by SEM, HRTEM, EDX and EELS.