Chapter 48. Heating Rates of Silicon Carbide in a Microwave Field

  1. Rajan Tandon,
  2. Andrew Wereszczak and
  3. Edgar Lara-Curzio
  1. P. Mellodge1,
  2. D. Folz1,
  3. D. Clark1 and
  4. J. West2

Published Online: 27 MAR 2008

DOI: 10.1002/9780470291313.ch48

Mechanical Properties and Performance of Engineering Ceramics II: Ceramic Engineering and Science Proceedings, Volume 27, Issue 2

Mechanical Properties and Performance of Engineering Ceramics II: Ceramic Engineering and Science Proceedings, Volume 27, Issue 2

How to Cite

Mellodge, P., Folz, D., Clark, D. and West, J. (2006) Heating Rates of Silicon Carbide in a Microwave Field, in Mechanical Properties and Performance of Engineering Ceramics II: Ceramic Engineering and Science Proceedings, Volume 27, Issue 2 (eds R. Tandon, A. Wereszczak and E. Lara-Curzio), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470291313.ch48

Author Information

  1. 1

    Department of Materials Science and Engineering Virginia Polytechnic Institute and State University Blacksburg, VA 24061

  2. 2

    PNES, Inc. Gainesville, FL 32609

Publication History

  1. Published Online: 27 MAR 2008
  2. Published Print: 1 JAN 2006

ISBN Information

Print ISBN: 9780470080528

Online ISBN: 9780470291313

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Keywords:

  • versus;
  • multimode;
  • silicon carbide (SiC);
  • alumina;
  • averaging

Summary

When heated using microwave energy, silicon carbide (SiC) exhibits a nonlinear heating behavior with respect to temperature. Experiments in a multimode cavity show that at higher microwave powers, there are two distinct regions in the heating rate versus temperature curve. In each temperature range, the heating rate closely follows a linear model, but the slopes of the two regions differ. This data is fit to a hybrid control system model so that a feedback controller can be designed to cause the SiC to precisely follow a given temperature profile.