Chapter 72. Effects of Pre-Existing Silicon Nitride in the Direct Nitridation Process of Liquid Silicon

  1. J. P. Singh
  1. Tzer-Shin Sheu

Published Online: 26 MAR 2008

DOI: 10.1002/9780470294444.ch72

Proceedings of the 21st Annual Conference on Composites, Advanced Ceramics, Materials, and Structures - B: Ceramic Engineering and Science Proceedings, Volume 18, Issue 4

Proceedings of the 21st Annual Conference on Composites, Advanced Ceramics, Materials, and Structures - B: Ceramic Engineering and Science Proceedings, Volume 18, Issue 4

How to Cite

Sheu, T.-S. (1997) Effects of Pre-Existing Silicon Nitride in the Direct Nitridation Process of Liquid Silicon, in Proceedings of the 21st Annual Conference on Composites, Advanced Ceramics, Materials, and Structures - B: Ceramic Engineering and Science Proceedings, Volume 18, Issue 4 (ed J. P. Singh), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470294444.ch72

Author Information

  1. Department of Materials Engineering, Kaohsiung Polytechnic Institute Kaohsiung, Taiwan

Publication History

  1. Published Online: 26 MAR 2008
  2. Published Print: 1 JAN 1997

ISBN Information

Print ISBN: 9780470375532

Online ISBN: 9780470294444

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Keywords:

  • nitridation;
  • homogenizer;
  • liquid silicon;
  • equiaxed particle;
  • microstructural observation

Summary

A direct nitridation process was studied in the Si/Si3N4 system at 1450–1500°C. An intermediate nitride layer, containing AIN, Si3N4, and ZrN, was applied between liquid silicon and nitrogen gas at high temperatures. The direct gas-nitriding samples were found to contain mostly β–Si3N4 with a minor content of α-Si3N4. The morphologies of β-Si3N4 and α-Si3N4 were equiaxed and elongated respectively. The α-Si3N4 phase was formed from the vapor phase. The β-S13N4 phase was directly formed from a reaction between liquid silicon and nitrogen gas. For a direct nitridation process of liquid silicon at 1500°C, the amount and the phase type of pre-existing Si3N4 do not significantly affect the content of β-Si3N4 formed.