Chapter 56. Microstructure — Electrical Transport Correlation in Ceramic Oxide Thin Films

  1. Don Bray
  1. Igor Kosacki and
  2. Harlan U. Anderson

Published Online: 23 MAR 2010

DOI: 10.1002/9780470294499.ch56

22nd Annual Conference on Composites, Advanced Ceramics, Materials, and Structures: B: Ceramic Engineering and Science Proceedings, Volume 19, Issue 4

22nd Annual Conference on Composites, Advanced Ceramics, Materials, and Structures: B: Ceramic Engineering and Science Proceedings, Volume 19, Issue 4

How to Cite

Kosacki, I. and Anderson, H. U. (1998) Microstructure — Electrical Transport Correlation in Ceramic Oxide Thin Films, in 22nd Annual Conference on Composites, Advanced Ceramics, Materials, and Structures: B: Ceramic Engineering and Science Proceedings, Volume 19, Issue 4 (ed D. Bray), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470294499.ch56

Author Information

  1. Department of Ceramic Engineering, University of Missouri-Rolla, MO 65401, USA

Publication History

  1. Published Online: 23 MAR 2010
  2. Published Print: 1 JAN 1998

ISBN Information

Print ISBN: 9780470375594

Online ISBN: 9780470294499

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Keywords:

  • anti-redeposition agents;
  • porcelain enamel system;
  • evaluated;
  • corrosion resistance;
  • alkali resistance

Summary

The relationship between the microstructure and electrical transport in ceramic oxide thin films is discussed using recent examples from the SrCeO3:Yb3 CeO2 and ZrO22:Y systems. It was observed that when the microstructure was changed from the micro to nanometer range, the electrical conductivity showed a dependence upon the microstructure. This manifested itself in greatly enhanced specific grain boundary conductivity and reaction kinetics for specimens which were nanostructured as compared to those in the micrometer range. This behavior has been interpreted as being due to the predominant role of interfacial, grain boundary and impurity segregation effects.