Chapter 63. Thermodynamic Modeling of the Ti-Si-C-H-CI-Ar Systemto Determine Optimum Conditions for Chemical Vapor Deposition of Ti3SiC2

  1. Don Bray
  1. E. Pickering,
  2. W. J. Lackey and
  3. S. Crain

Published Online: 23 MAR 2010

DOI: 10.1002/9780470294499.ch63

22nd Annual Conference on Composites, Advanced Ceramics, Materials, and Structures: B: Ceramic Engineering and Science Proceedings, Volume 19, Issue 4

22nd Annual Conference on Composites, Advanced Ceramics, Materials, and Structures: B: Ceramic Engineering and Science Proceedings, Volume 19, Issue 4

How to Cite

Pickering, E., Lackey, W. J. and Crain, S. (1998) Thermodynamic Modeling of the Ti-Si-C-H-CI-Ar Systemto Determine Optimum Conditions for Chemical Vapor Deposition of Ti3SiC2, in 22nd Annual Conference on Composites, Advanced Ceramics, Materials, and Structures: B: Ceramic Engineering and Science Proceedings, Volume 19, Issue 4 (ed D. Bray), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470294499.ch63

Author Information

  1. School of Materials Science and Engineering, C.W. Woodruff School of Mechanical Engineering Georgia Institute of Technology, Atlanta, Georgia, 30332

Publication History

  1. Published Online: 23 MAR 2010
  2. Published Print: 1 JAN 1998

ISBN Information

Print ISBN: 9780470375594

Online ISBN: 9780470294499

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Keywords:

  • durability;
  • contingencies;
  • utilize;
  • capability;
  • multidimensional

Summary

Thermodynamic modeling of the Ti-Si-C-H-CI-Ar system is presented in order to better understand the conditions surrounding chemical vapor deposition of Ti3SiC2. This ternary compound is classified as a soft, mechanically tough ceramic, and as such, is a strong candidate as a matrix material or fiber-matrix interface coating in fiber reinforced composites synthesized using forced flow-thermal gradient chemical vapor infiltration (FCVI). The computer program SOLGASMIX was used to calculate deposition diagrams for the TiCl4-SiC4-CCl4-H2 reagent system. The effects of hydrogen to reagent concentration, temperature, and pressure were explored with a “box” type study, surrounding a middle condition of 1300K, 760 torr, and hydrogen to reagent concentration ratio of 20:l. Results suggest that Ti3SiC2 prefers to deposit at lower hydrogen to reagent concentrations, and lower temperatures but higher pressures.