Chapter 29. First-Principles Study of the Tensile Strength and Fracture of SiC Grain Boundaries

  1. Todd Jessen and
  2. Ersan Ustundag
  1. Masanori Kohyama

Published Online: 26 MAR 2008

DOI: 10.1002/9780470294628.ch29

24th Annual Conference on Composites, Advanced Ceramics, Materials, and Structures: A: Ceramic Engineering and Science Proceedings, Volume 21, Issue 3

24th Annual Conference on Composites, Advanced Ceramics, Materials, and Structures: A: Ceramic Engineering and Science Proceedings, Volume 21, Issue 3

How to Cite

Kohyama, M. (2000) First-Principles Study of the Tensile Strength and Fracture of SiC Grain Boundaries, in 24th Annual Conference on Composites, Advanced Ceramics, Materials, and Structures: A: Ceramic Engineering and Science Proceedings, Volume 21, Issue 3 (eds T. Jessen and E. Ustundag), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470294628.ch29

Author Information

  1. Osaka National Research Institute, AIST, 1-8-31, Midorigaoka, Ikeda, Osaka 563-8577, Japan

Publication History

  1. Published Online: 26 MAR 2008
  2. Published Print: 1 JAN 2000

ISBN Information

Print ISBN: 9780470375686

Online ISBN: 9780470294628

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Keywords:

  • slow crack growth behavior;
  • soda-lime rectangular beam specimens;
  • constant stress-rate testing;
  • distilled water;
  • brittle structures

Summary

The tensile strength and fracture of the non-polar interface of the {122} Σ=9 coincidence tilt boundary in cubic SiC have been examined through the behavior of electrons and atoms based on the density-functional theory. This interface is very strong because of the reconstruction of interfacial bonds. The tensile strength is about 80% of that of bulk crystal. The Young's modulus and the fracture toughness are also comparable to the bulk values. The back Si-C bond of the interfacial C-C bond is broken first because of the large strength of the C-C bond. Critical bond stretchings for the Si-C bond breaking are observed. Changes in the electronic structure are analysed.